Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRFP260 | IXYS |
Description: MOSFET N-CH 200V 46A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товар відсутній |
||||||||||||
IXFB170N30P | IXYS |
Description: MOSFET N-CH 300V 170A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFB52N90P | IXYS |
Description: MOSFET N-CH 900V 52A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFH18N90P | IXYS | Description: MOSFET N-CH 900V 18A TO247AD |
на замовлення 1404 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFH24N90P | IXYS |
Description: MOSFET N-CH 900V 24A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
на замовлення 158 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFK250N10P | IXYS |
Description: MOSFET N-CH 100V 250A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFK40N90P | IXYS |
Description: MOSFET N-CH 900V 40A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFN300N10P | IXYS |
Description: MOSFET N-CH 100V 295A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 295A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFR16N80P | IXYS | Description: MOSFET N-CH ISOPLUS247 |
товар відсутній |
||||||||||||
IXFR40N90P | IXYS | Description: MOSFET N-CH 900V 21A ISOPLUS247 |
товар відсутній |
||||||||||||
IXFT24N90P | IXYS |
Description: MOSFET N-CH 900V 24A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
на замовлення 570 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFX170N20P | IXYS |
Description: MOSFET N-CH 200V 170A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFX40N90P | IXYS | Description: MOSFET N-CH 900V 40A PLUS247-3 |
на замовлення 720 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXGB200N60B3 | IXYS |
Description: IGBT 600V 75A 1250W PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A Supplier Device Package: PLUS264™ IGBT Type: PT Td (on/off) @ 25°C: 44ns/310ns Switching Energy: 1.6mJ (on), 2.9mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 750 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 1250 W |
товар відсутній |
||||||||||||
IXTC62N15P | IXYS | Description: MOSFET N-CH ISOPLUS-220 |
товар відсутній |
||||||||||||
IXTP18N60PM | IXYS |
Description: MOSFET N-CH 600V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товар відсутній |
||||||||||||
IXTQ28N15P | IXYS | Description: MOSFET N-CH TO-3P |
товар відсутній |
||||||||||||
IXTR62N15P | IXYS |
Description: MOSFET N-CH 150V 36A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
товар відсутній |
||||||||||||
IXTU2N80P | IXYS | Description: MOSFET N-CH TO-251 |
товар відсутній |
||||||||||||
IXTY4N60P | IXYS | Description: MOSFET N-CH 600V 4A TO252 |
товар відсутній |
||||||||||||
IXTV02N250S | IXYS | Description: MOSFET N-CH 2500V .2A PLUS220 |
товар відсутній |
||||||||||||
IXFK240N15T2 | IXYS |
Description: MOSFET N-CH 150V 240A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFK320N17T2 | IXYS |
Description: MOSFET N-CH 170V 320A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 170 V Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFK360N15T2 | IXYS |
Description: MOSFET N-CH 150V 360A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
товар відсутній |
||||||||||||
IXFN240N15T2 | IXYS | Description: MOSFET N-CH 150V 240A SOT227B |
товар відсутній |
||||||||||||
IXFN360N15T2 | IXYS |
Description: MOSFET N-CH 150V 310A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 1070W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFN320N17T2 | IXYS | Description: MOSFET N-CH 170V 260A SOT227 |
товар відсутній |
||||||||||||
IXFN40N90P | IXYS |
Description: MOSFET N-CH 900V 33A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFN520N075T2 | IXYS |
Description: MOSFET N-CH 75V 480A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 480A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 940W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFN52N90P | IXYS |
Description: MOSFET N-CH 900V 43A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товар відсутній |
||||||||||||
IXFR18N90P | IXYS |
Description: MOSFET N-CH 900V 10.5A ISOPLS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 6V @ 1mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V |
товар відсутній |
||||||||||||
IXFR24N90P | IXYS |
Description: MOSFET N-CH 900V 13A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
товар відсутній |
||||||||||||
IXFT18N90P | IXYS | Description: MOSFET N-CH 900V 18A TO268 |
товар відсутній |
||||||||||||
IXFV12N90P | IXYS |
Description: MOSFET N-CH 900V 12A PLUS220 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
товар відсутній |
||||||||||||
IXFV18N90P | IXYS | Description: MOSFET N-CH 900V 18A PLUS220 |
товар відсутній |
||||||||||||
IXFX240N15T2 | IXYS |
Description: MOSFET N-CH 150V 240A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFV12N90PS | IXYS |
Description: MOSFET N-CH 900V 12A PLUS-220SMD Packaging: Tube Package / Case: PLUS-220SMD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS-220SMD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
товар відсутній |
||||||||||||
IXFX320N17T2 | IXYS | Description: MOSFET N-CH 170V 320A PLUS247-3 |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFV18N90PS | IXYS | Description: MOSFET N-CH 900V 18A PLUS-220SMD |
товар відсутній |
||||||||||||
IXFX360N15T2 | IXYS |
Description: MOSFET N-CH 150V 360A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
на замовлення 1766 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXDN509D1T/R | IXYS |
Description: IC GATE DRVR LOW-SIDE 6DFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 30V Input Type: Non-Inverting Supplier Device Package: 6-DFN (4x5) Rise / Fall Time (Typ): 25ns, 23ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 9A, 9A Part Status: Obsolete DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||
IXGH25N250 | IXYS |
Description: IGBT 2500V 60A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 75 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
товар відсутній |
||||||||||||
IXGX75N250 | IXYS | Description: IGBT 2500V 170A 780W PLUS247 |
товар відсутній |
||||||||||||
IXTV03N400S | IXYS | Description: MOSFET N-CH 4000V .3A PLUS 220 |
товар відсутній |
||||||||||||
IXTH110N10L2 | IXYS |
Description: MOSFET N-CH 100V 110A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFT42N50P2 | IXYS |
Description: MOSFET N-CH 500V 42A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXTH450P2 | IXYS |
Description: MOSFET N-CH 500V 16A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXTQ460P2 | IXYS |
Description: MOSFET N-CH 500V 24A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V |
на замовлення 63 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXTP450P2 | IXYS |
Description: MOSFET N-CH 500V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V |
товар відсутній |
||||||||||||
IXTQ450P2 | IXYS |
Description: MOSFET N-CH 500V 16A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXTQ480P2 | IXYS | Description: MOSFET N-CH 500V 52A TO3P |
товар відсутній |
||||||||||||
IXTQ470P2 | IXYS | Description: MOSFET N-CH 500V 42A TO3P |
товар відсутній |
||||||||||||
IXFH52N50P2 | IXYS |
Description: MOSFET N-CH 500V 52A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFH42N50P2 | IXYS |
Description: MOSFET N-CH 500V 42A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V |
на замовлення 129 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFK74N50P2 | IXYS | Description: MOSFET N-CH 500V 74A TO264AA |
товар відсутній |
||||||||||||
IXFT52N50P2 | IXYS |
Description: MOSFET N-CH 500V 52A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
товар відсутній |
||||||||||||
IXFX74N50P2 | IXYS | Description: MOSFET N-CH 500V 74A PLUS247-3 |
товар відсутній |
||||||||||||
IXFK94N50P2 | IXYS |
Description: MOSFET N-CH 500V 94A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V Power Dissipation (Max): 1300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFX94N50P2 | IXYS |
Description: MOSFET N-CH 500V 94A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V Power Dissipation (Max): 1300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
IXFB120N50P2 | IXYS |
Description: MOSFET N-CH 500V 120A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V Power Dissipation (Max): 1890W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS264™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товар відсутній |
IRFP260 |
Виробник: IXYS
Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXFB170N30P |
Виробник: IXYS
Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
IXFB52N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
IXFH18N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 18A TO247AD
Description: MOSFET N-CH 900V 18A TO247AD
на замовлення 1404 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 844.7 грн |
10+ | 747.64 грн |
100+ | 631.44 грн |
500+ | 527.14 грн |
1000+ | 483.51 грн |
IXFH24N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET N-CH 900V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1050.78 грн |
30+ | 819.08 грн |
120+ | 770.89 грн |
IXFK250N10P |
Виробник: IXYS
Description: MOSFET N-CH 100V 250A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Description: MOSFET N-CH 100V 250A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1586.73 грн |
25+ | 1266.63 грн |
IXFK40N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 40A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Description: MOSFET N-CH 900V 40A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1931.9 грн |
25+ | 1542.35 грн |
100+ | 1445.98 грн |
IXFN300N10P |
Виробник: IXYS
Description: MOSFET N-CH 100V 295A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Description: MOSFET N-CH 100V 295A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
товар відсутній
IXFT24N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET N-CH 900V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1131.61 грн |
30+ | 882.3 грн |
120+ | 830.41 грн |
510+ | 706.24 грн |
IXFX170N20P |
Виробник: IXYS
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 1285.89 грн |
IXFX40N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 40A PLUS247-3
Description: MOSFET N-CH 900V 40A PLUS247-3
на замовлення 720 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1894.76 грн |
10+ | 1682.51 грн |
100+ | 1436.71 грн |
500+ | 1224.11 грн |
IXGB200N60B3 |
Виробник: IXYS
Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
товар відсутній
IXTP18N60PM |
Виробник: IXYS
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
IXTR62N15P |
Виробник: IXYS
Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
товар відсутній
IXFK240N15T2 |
Виробник: IXYS
Description: MOSFET N-CH 150V 240A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Description: MOSFET N-CH 150V 240A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
товар відсутній
IXFK320N17T2 |
Виробник: IXYS
Description: MOSFET N-CH 170V 320A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
Description: MOSFET N-CH 170V 320A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45000 pF @ 25 V
товар відсутній
IXFK360N15T2 |
Виробник: IXYS
Description: MOSFET N-CH 150V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Description: MOSFET N-CH 150V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
товар відсутній
IXFN360N15T2 |
Виробник: IXYS
Description: MOSFET N-CH 150V 310A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Description: MOSFET N-CH 150V 310A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3319.83 грн |
10+ | 2848.58 грн |
IXFN40N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
товар відсутній
IXFN520N075T2 |
Виробник: IXYS
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
Description: MOSFET N-CH 75V 480A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 940W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
товар відсутній
IXFN52N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
IXFR18N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
товар відсутній
IXFR24N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET N-CH 900V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
товар відсутній
IXFV12N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
товар відсутній
IXFX240N15T2 |
Виробник: IXYS
Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1444.73 грн |
IXFV12N90PS |
Виробник: IXYS
Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
товар відсутній
IXFX320N17T2 |
Виробник: IXYS
Description: MOSFET N-CH 170V 320A PLUS247-3
Description: MOSFET N-CH 170V 320A PLUS247-3
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2346.24 грн |
10+ | 2084.1 грн |
IXFX360N15T2 |
Виробник: IXYS
Description: MOSFET N-CH 150V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Description: MOSFET N-CH 150V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2322.21 грн |
10+ | 2062.58 грн |
100+ | 1761.3 грн |
IXDN509D1T/R |
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXGH25N250 |
Виробник: IXYS
Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXTH110N10L2 |
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1323.85 грн |
30+ | 1032.25 грн |
120+ | 971.53 грн |
IXFT42N50P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 765.33 грн |
10+ | 665.81 грн |
100+ | 551.24 грн |
IXTH450P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 412.89 грн |
30+ | 314.9 грн |
IXTQ460P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 439.83 грн |
30+ | 335.35 грн |
IXTP450P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
товар відсутній
IXTQ450P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 364.1 грн |
10+ | 294.58 грн |
IXFH52N50P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 500V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 789.36 грн |
30+ | 606.82 грн |
120+ | 542.94 грн |
510+ | 449.59 грн |
1020+ | 404.63 грн |
IXFH42N50P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Description: MOSFET N-CH 500V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
на замовлення 129 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 638.63 грн |
30+ | 490.76 грн |
120+ | 439.11 грн |
IXFT52N50P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 500V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
IXFK94N50P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1553.96 грн |
IXFX94N50P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1524.84 грн |
10+ | 1304.34 грн |
IXFB120N50P2 |
Виробник: IXYS
Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній