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IXFV18N90PS IXFV18N90PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 18A PLUS-220SMD
товар відсутній
IXFX360N15T2 IXFX360N15T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_360n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
1+2291.45 грн
10+ 2035.26 грн
100+ 1737.97 грн
IXDN509D1T/R IXYS DS99670.pdf Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXGH25N250 IXGH25N250 IXYS media?resourcetype=datasheets&amp;itemid=10d8a1ba-2522-4d0a-90e5-4afbb5a37d2c&amp;filename=littelfuse_discrete_igbts_npt_ixg_25n250_datasheet.pdf Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGX75N250 IXGX75N250 IXYS DS99826B(IXGK-X75N250).pdf Description: IGBT 2500V 170A 780W PLUS247
товар відсутній
IXTV03N400S IXYS DS100214A-(IXTH_V03N400_S).pdf Description: MOSFET N-CH 4000V .3A PLUS 220
товар відсутній
IXTH110N10L2 IXTH110N10L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_110n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1306.32 грн
30+ 1018.58 грн
120+ 958.66 грн
IXFT42N50P2 IXFT42N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+755.19 грн
10+ 656.99 грн
100+ 543.94 грн
IXTH450P2 IXTH450P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
1+407.42 грн
30+ 310.73 грн
IXTQ460P2 IXTQ460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
1+434 грн
30+ 330.91 грн
IXTP450P2 IXTP450P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
товар відсутній
IXTQ450P2 IXTQ450P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+359.27 грн
10+ 290.68 грн
IXTQ480P2 IXTQ480P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq480p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 52A TO3P
товар відсутній
IXTQ470P2 IXTQ470P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq470p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 42A TO3P
товар відсутній
IXFH52N50P2 IXFH52N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_52n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
1+778.91 грн
30+ 598.78 грн
120+ 535.75 грн
510+ 443.63 грн
1020+ 399.27 грн
IXFH42N50P2 IXFH42N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
на замовлення 129 шт:
термін постачання 21-31 дні (днів)
1+630.17 грн
30+ 484.26 грн
120+ 433.29 грн
IXFK74N50P2 IXFK74N50P2 IXYS DS100252A(IXFK-FX74N50P2).pdf Description: MOSFET N-CH 500V 74A TO264AA
товар відсутній
IXFT52N50P2 IXFT52N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_52n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
IXFX74N50P2 IXFX74N50P2 IXYS DS100252A(IXFK-FX74N50P2).pdf Description: MOSFET N-CH 500V 74A PLUS247-3
товар відсутній
IXFK94N50P2 IXFK94N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1533.38 грн
IXFX94N50P2 IXFX94N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+1504.64 грн
10+ 1287.07 грн
IXFB120N50P2 IXFB120N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb120n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
FMM110-015X2F IXYS DS100145-(FMM110-015X2F).pdf Description: MOSFET 2N-CH 150V 53A I4-PAC
товар відсутній
FMM22-05PF IXYS DS100039-(FMM22-05PF).pdf Description: MOSFET 2N-CH 500V 13A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 132W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM22-06PF IXYS DS100038-(FMM22-06F).pdf Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM50-025TF IXYS DS100040A-(FMM50-025TF).pdf Description: MOSFET 2N-CH 250V 30A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMM60-02TF IXYS DS100048-(FMM60-02TF).pdf Description: MOSFET 2N-CH 200V 33A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP26-02P FMP26-02P IXYS DS100033A(FMP26-02P).pdf Description: MOSFET N/P-CH 200V 26A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP36-015P IXYS DS100034-(FMP36-015P).pdf Description: MOSFET N/P-CH 150V 36A/22A I4PAC
товар відсутній
FMP76-010T IXYS DS100037-(FMP76-010T).pdf Description: MOSFET N/P-CH 100V 62A/54A I4PAC
товар відсутній
IXBH24N170 IXBH24N170 IXYS littelfuse_discrete_igbts_bimosfet_ixb_24n170_datasheet.pdf.pdf Description: IGBT 1700V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
1+1854.57 грн
30+ 1480.58 грн
120+ 1388.05 грн
IXBK75N170 IXBK75N170 IXYS littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf Description: IGBT 1700V 200A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: TO-264AA
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
1+4279.67 грн
25+ 3621.31 грн
IXBK75N170A IXBK75N170A IXYS DS100166A(IXBK-BX75N170A).pdf Description: IGBT 1700V 110A 1040W TO264
товар відсутній
IXBN75N170 IXBN75N170 IXYS littelfuse_discrete_igbts_bimosfet_ixbn75n170_datasheet.pdf.pdf Description: IGBT MOD 1700V 145A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6.93 nF @ 25 V
товар відсутній
IXBX75N170 IXBX75N170 IXYS littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf Description: IGBT 1700V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: PLUS247™-3
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+4188.42 грн
30+ 3544.79 грн
IXBX75N170A IXBX75N170A IXYS littelfuse_discrete_igbts_bimosfet_ixbx75n170a_datasheet.pdf.pdf Description: IGBT 1700V 110A 1040W PLUS247
товар відсутній
IXFA110N15T2-TRL IXFA110N15T2-TRL IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
IXFA6N120P IXFA6N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 3694 шт:
термін постачання 21-31 дні (днів)
1+681.18 грн
50+ 523.86 грн
100+ 468.72 грн
500+ 388.13 грн
1000+ 349.31 грн
IXFH230N10T IXFH230N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh230n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 230A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+622.26 грн
30+ 478.29 грн
120+ 427.94 грн
510+ 354.36 грн
IXFH340N075T2 IXFH340N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 340A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
1+727.17 грн
10+ 643.85 грн
IXFH400N075T2 IXFH400N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 400A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
товар відсутній
IXFH6N120P IXFH6N120P IXYS DS100202C(IXFA-FP-FH6N120P).pdf Description: MOSFET N-CH 1200V 6A TO-247
товар відсутній
IXFK220N15P IXFK220N15P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_220n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 220A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
1+1546.32 грн
IXFK360N10T IXFK360N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_360n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
1+896.75 грн
25+ 699.1 грн
100+ 657.98 грн
IXFK420N10T IXFK420N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 420A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXFK520N075T2 IXFK520N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_520n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 520A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
товар відсутній
IXFN420N10T IXFN420N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn420n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 420A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXFP6N120P IXFP6N120P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+653.16 грн
10+ 539.09 грн
IXFP76N15T2 IXFP76N15T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_76n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
1+366.46 грн
10+ 316.7 грн
IXFT340N075T2 IXFT340N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 340A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
1+927.65 грн
10+ 821.4 грн
100+ 693.71 грн
IXFT86N30T IXFT86N30T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_86n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 86A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFT88N30P IXFT88N30P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_88n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
30+791.1 грн
Мінімальне замовлення: 30
IXFX360N10T IXFX360N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_360n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+884.53 грн
IXFX420N10T IXFX420N10T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 420A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXFX520N075T2 IXFX520N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_520n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 520A PLUS247-3
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
1+1115.19 грн
10+ 986.7 грн
IXGH30N60C3D1 IXGH30N60C3D1 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
на замовлення 2323 шт:
термін постачання 21-31 дні (днів)
1+548.25 грн
30+ 421.39 грн
120+ 377.04 грн
510+ 312.21 грн
1020+ 280.99 грн
2010+ 263.3 грн
IXGK120N120B3 IXGK120N120B3 IXYS littelfuse_discrete_igbts_pt_ixg_120n120b3_datasheet.pdf.pdf Description: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
300+1745.05 грн
Мінімальне замовлення: 300
IXGK50N120C3H1 IXGK50N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixg_50n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 95A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGK64N60B3D1 IXGK64N60B3D1 IXYS littelfuse_discrete_igbts_pt_ixg_64n60b3d1_datasheet.pdf.pdf Description: IGBT 600V 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK72N60A3H1 IXGK72N60A3H1 IXYS littelfuse_discrete_igbts_pt_ixg_72n60a3h1_datasheet.pdf.pdf Description: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
IXFV18N90PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf
IXFV18N90PS
Виробник: IXYS
Description: MOSFET N-CH 900V 18A PLUS-220SMD
товар відсутній
IXFX360N15T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_360n15t2_datasheet.pdf.pdf
IXFX360N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2291.45 грн
10+ 2035.26 грн
100+ 1737.97 грн
IXDN509D1T/R DS99670.pdf
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXGH25N250 media?resourcetype=datasheets&amp;itemid=10d8a1ba-2522-4d0a-90e5-4afbb5a37d2c&amp;filename=littelfuse_discrete_igbts_npt_ixg_25n250_datasheet.pdf
IXGH25N250
Виробник: IXYS
Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
товар відсутній
IXGX75N250 DS99826B(IXGK-X75N250).pdf
IXGX75N250
Виробник: IXYS
Description: IGBT 2500V 170A 780W PLUS247
товар відсутній
IXTV03N400S DS100214A-(IXTH_V03N400_S).pdf
Виробник: IXYS
Description: MOSFET N-CH 4000V .3A PLUS 220
товар відсутній
IXTH110N10L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_110n10_datasheet.pdf.pdf
IXTH110N10L2
Виробник: IXYS
Description: MOSFET N-CH 100V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1306.32 грн
30+ 1018.58 грн
120+ 958.66 грн
IXFT42N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf
IXFT42N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+755.19 грн
10+ 656.99 грн
100+ 543.94 грн
IXTH450P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf
IXTH450P2
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+407.42 грн
30+ 310.73 грн
IXTQ460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTQ460P2
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+434 грн
30+ 330.91 грн
IXTP450P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf
IXTP450P2
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
товар відсутній
IXTQ450P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf
IXTQ450P2
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+359.27 грн
10+ 290.68 грн
IXTQ480P2 littelfuse_discrete_mosfets_n-channel_standard_ixtq480p2_datasheet.pdf.pdf
IXTQ480P2
Виробник: IXYS
Description: MOSFET N-CH 500V 52A TO3P
товар відсутній
IXTQ470P2 littelfuse_discrete_mosfets_n-channel_standard_ixtq470p2_datasheet.pdf.pdf
IXTQ470P2
Виробник: IXYS
Description: MOSFET N-CH 500V 42A TO3P
товар відсутній
IXFH52N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_52n50p2_datasheet.pdf.pdf
IXFH52N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+778.91 грн
30+ 598.78 грн
120+ 535.75 грн
510+ 443.63 грн
1020+ 399.27 грн
IXFH42N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf
IXFH42N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
на замовлення 129 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+630.17 грн
30+ 484.26 грн
120+ 433.29 грн
IXFK74N50P2 DS100252A(IXFK-FX74N50P2).pdf
IXFK74N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 74A TO264AA
товар відсутній
IXFT52N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_52n50p2_datasheet.pdf.pdf
IXFT52N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
IXFX74N50P2 DS100252A(IXFK-FX74N50P2).pdf
IXFX74N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 74A PLUS247-3
товар відсутній
IXFK94N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf
IXFK94N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 94A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1533.38 грн
IXFX94N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_94n50p2_datasheet.pdf.pdf
IXFX94N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 94A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1504.64 грн
10+ 1287.07 грн
IXFB120N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb120n50p2_datasheet.pdf.pdf
IXFB120N50P2
Виробник: IXYS
Description: MOSFET N-CH 500V 120A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 1890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS264™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
FMM110-015X2F DS100145-(FMM110-015X2F).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 150V 53A I4-PAC
товар відсутній
FMM22-05PF DS100039-(FMM22-05PF).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 500V 13A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 132W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM22-06PF DS100038-(FMM22-06F).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товар відсутній
FMM50-025TF DS100040A-(FMM50-025TF).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 250V 30A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMM60-02TF DS100048-(FMM60-02TF).pdf
Виробник: IXYS
Description: MOSFET 2N-CH 200V 33A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP26-02P DS100033A(FMP26-02P).pdf
FMP26-02P
Виробник: IXYS
Description: MOSFET N/P-CH 200V 26A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
товар відсутній
FMP36-015P DS100034-(FMP36-015P).pdf
Виробник: IXYS
Description: MOSFET N/P-CH 150V 36A/22A I4PAC
товар відсутній
FMP76-010T DS100037-(FMP76-010T).pdf
Виробник: IXYS
Description: MOSFET N/P-CH 100V 62A/54A I4PAC
товар відсутній
IXBH24N170 littelfuse_discrete_igbts_bimosfet_ixb_24n170_datasheet.pdf.pdf
IXBH24N170
Виробник: IXYS
Description: IGBT 1700V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.06 µs
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1854.57 грн
30+ 1480.58 грн
120+ 1388.05 грн
IXBK75N170 littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf
IXBK75N170
Виробник: IXYS
Description: IGBT 1700V 200A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: TO-264AA
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4279.67 грн
25+ 3621.31 грн
IXBK75N170A DS100166A(IXBK-BX75N170A).pdf
IXBK75N170A
Виробник: IXYS
Description: IGBT 1700V 110A 1040W TO264
товар відсутній
IXBN75N170 littelfuse_discrete_igbts_bimosfet_ixbn75n170_datasheet.pdf.pdf
IXBN75N170
Виробник: IXYS
Description: IGBT MOD 1700V 145A 625W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6.93 nF @ 25 V
товар відсутній
IXBX75N170 littelfuse_discrete_igbts_bimosfet_ixb_75n170_datasheet.pdf.pdf
IXBX75N170
Виробник: IXYS
Description: IGBT 1700V 200A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Supplier Device Package: PLUS247™-3
Gate Charge: 350 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1040 W
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4188.42 грн
30+ 3544.79 грн
IXBX75N170A littelfuse_discrete_igbts_bimosfet_ixbx75n170a_datasheet.pdf.pdf
IXBX75N170A
Виробник: IXYS
Description: IGBT 1700V 110A 1040W PLUS247
товар відсутній
IXFA110N15T2-TRL littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
IXFA110N15T2-TRL
Виробник: IXYS
Description: MOSFET N-CH 150V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
IXFA6N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf
IXFA6N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 3694 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+681.18 грн
50+ 523.86 грн
100+ 468.72 грн
500+ 388.13 грн
1000+ 349.31 грн
IXFH230N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh230n10t_datasheet.pdf.pdf
IXFH230N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 230A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 500mA, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+622.26 грн
30+ 478.29 грн
120+ 427.94 грн
510+ 354.36 грн
IXFH340N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf
IXFH340N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 340A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+727.17 грн
10+ 643.85 грн
IXFH400N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf
IXFH400N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 400A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
товар відсутній
IXFH6N120P DS100202C(IXFA-FP-FH6N120P).pdf
IXFH6N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO-247
товар відсутній
IXFK220N15P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_220n15p_datasheet.pdf.pdf
IXFK220N15P
Виробник: IXYS
Description: MOSFET N-CH 150V 220A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1546.32 грн
IXFK360N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_360n10t_datasheet.pdf.pdf
IXFK360N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+896.75 грн
25+ 699.1 грн
100+ 657.98 грн
IXFK420N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf
IXFK420N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 420A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXFK520N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_520n075t2_datasheet.pdf.pdf
IXFK520N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 520A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
товар відсутній
IXFN420N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn420n10t_datasheet.pdf.pdf
IXFN420N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 420A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXFP6N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf
IXFP6N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+653.16 грн
10+ 539.09 грн
IXFP76N15T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_76n15t2_datasheet.pdf.pdf
IXFP76N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+366.46 грн
10+ 316.7 грн
IXFT340N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_340n075t2_datasheet.pdf.pdf
IXFT340N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 340A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+927.65 грн
10+ 821.4 грн
100+ 693.71 грн
IXFT86N30T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_86n30t_datasheet.pdf.pdf
IXFT86N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 86A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товар відсутній
IXFT88N30P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_88n30p_datasheet.pdf.pdf
IXFT88N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 88A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
30+791.1 грн
Мінімальне замовлення: 30
IXFX360N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_360n10t_datasheet.pdf.pdf
IXFX360N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 360A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+884.53 грн
IXFX420N10T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_420n10t_datasheet.pdf.pdf
IXFX420N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 420A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47000 pF @ 25 V
товар відсутній
IXFX520N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_520n075t2_datasheet.pdf.pdf
IXFX520N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 520A PLUS247-3
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1115.19 грн
10+ 986.7 грн
IXGH30N60C3D1 littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf
IXGH30N60C3D1
Виробник: IXYS
Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
на замовлення 2323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+548.25 грн
30+ 421.39 грн
120+ 377.04 грн
510+ 312.21 грн
1020+ 280.99 грн
2010+ 263.3 грн
IXGK120N120B3 littelfuse_discrete_igbts_pt_ixg_120n120b3_datasheet.pdf.pdf
IXGK120N120B3
Виробник: IXYS
Description: IGBT 1200V 200A 830W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+1745.05 грн
Мінімальне замовлення: 300
IXGK50N120C3H1 littelfuse_discrete_igbts_pt_ixg_50n120c3h1_datasheet.pdf.pdf
IXGK50N120C3H1
Виробник: IXYS
Description: IGBT 1200V 95A 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/123ns
Switching Energy: 2mJ (on), 630µJ (off)
Test Condition: 600V, 40A, 2Ohm, 15V
Gate Charge: 196 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 460 W
товар відсутній
IXGK64N60B3D1 littelfuse_discrete_igbts_pt_ixg_64n60b3d1_datasheet.pdf.pdf
IXGK64N60B3D1
Виробник: IXYS
Description: IGBT 600V 460W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
товар відсутній
IXGK72N60A3H1 littelfuse_discrete_igbts_pt_ixg_72n60a3h1_datasheet.pdf.pdf
IXGK72N60A3H1
Виробник: IXYS
Description: IGBT 600V 75A 540W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.4mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
товар відсутній
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