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BSP254A BSP254A
Код товару: 79931 		Philips datasheet_bsp254a.pdf Транзистори > Польові P-канальні
Корпус: TO-92
Uds,V: 250 V
Id,A: 0,2 A
Rds(on),Om: 10 Ohm
Ciss, pF/Qg, nC: 65/
Монтаж: THT
товар відсутній
BSP298L6327
Код товару: 56811 		Транзистори > IGBT
товар відсутній
BSP-2 NEUTRIK Category: Other Neutrik Connectors
Description: RED BUSH > NP*C
кількість в упаковці: 1 шт
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BSP-2 Mueller Electric Mueller Electric NEUTRIC RED STRAIN RELIEF
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BSP-2 BSP-2 Neutrik pgurl_bsp.pdf Connector Accessories Boot Red Box
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BSP-2 BSP-2 Neutrik bsp-color-2-1853882.pdf Phone Connectors RED BOOT FOR C-SERIE
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BSP-22U-12MK Belden Wire & Cable PDF_192080-2529910.pdf Other Tools SECURE PATCH ENCL, 22U X 12D
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BSP-22U-12PK Belden Wire & Cable PDF_192080-2529910.pdf Other Tools SECURE PATCH ENCL, 22U X 12D
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BSP-22U-12SK Belden Wire & Cable PDF_192080-2529910.pdf Other Tools SECURE PATCH ENCL, 22U X 12D
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BSP-22U-6MK Belden Wire & Cable PDF_192080-2529910.pdf Other Tools SECURE PATCH ENCL, 22U X 6D
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BSP-22U-6PK Belden Wire & Cable PDF_192080-2529910.pdf Other Tools SECURE PATCH ENCL, 22U X 6D
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BSP-22U-6SK Belden Wire & Cable PDF_192080-2529910.pdf Other Tools SECURE PATCH ENCL, 22U X 6D
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BSP20,115 BSP20,115 NXP Semiconductors 221bsp19_20.pdf Trans GP BJT NPN 250V 0.1A 1200mW Automotive 4-Pin(3+Tab) SC-73 T/R
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BSP220,115 BSP220,115 Nexperia 170946136634031bsp220_cnv.pdf Trans MOSFET P-CH 200V 0.225A 4-Pin(3+Tab) SC-73 T/R
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BSP220,115 BSP220,115 Nexperia BSP220_CNV-2937893.pdf MOSFET BSP220/SOT223/SC-73
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BSP225,115 BSP225,115 Nexperia 75759804052040bsp225_cnv.pdf Trans MOSFET P-CH 250V 0.225A 4-Pin(3+Tab) SC-73 T/R
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BSP225,115 BSP225,115 NEXPERIA 75759804052040bsp225_cnv.pdf Trans MOSFET P-CH 250V 0.225A 4-Pin(3+Tab) SC-73 T/R
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BSP230,135 BSP230,135 NEXPERIA BSP230.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -300V; -210mA; Idm: -0.75A; 1.5W
Mounting: SMD
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.75A
Case: SC73; SOT223
Drain-source voltage: -300V
Drain current: -210mA
On-state resistance: 17Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
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BSP230,135 BSP230,135 Nexperia 174496733120837bsp230.pdf Trans MOSFET P-CH 300V 0.21A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP230,135 BSP230,135 Nexperia USA Inc. BSP230.pdf Description: MOSFET P-CH 300V 210MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
товар відсутній
BSP230,135 BSP230,135 NEXPERIA 2928bsp230.pdf Trans MOSFET P-CH 300V 0.21A 4-Pin(3+Tab) SC-73 T/R
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BSP230,135 BSP230,135 Nexperia 174496733120837bsp230.pdf Trans MOSFET P-CH 300V 0.21A 4-Pin(3+Tab) SC-73 T/R
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BSP250,115 BSP250,115 Nexperia 74259007555508bsp250.pdf Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
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BSP250,135 BSP250,135 NEXPERIA 74259007555508bsp250.pdf Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
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BSP250,135 BSP250,135 Nexperia 74259007555508bsp250.pdf Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
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BSP254A,126 BSP254A,126 NXP Semiconductors bsp254_a_cnv_2.pdf Trans MOSFET P-CH 250V 0.2A 3-Pin TO-92 Ammo
товар відсутній
BSP295 L6327 BSP295 L6327 Infineon Technologies bsp295_rev1.3.pdf Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP295E6327 BSP295E6327 Infineon Technologies bsp295_rev1.3.pdf Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP295E6327 BSP295E6327 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP295E6327T BSP295E6327T Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP295H6327XTSA1 BSP295H6327XTSA1 INFINEON TECHNOLOGIES BSP295H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 60V
Drain current: 1.8A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
товар відсутній
BSP295H6327XTSA1 BSP295H6327XTSA1 INFINEON TECHNOLOGIES BSP295H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 60V
Drain current: 1.8A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
BSP295L6327HTSA1 BSP295L6327HTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP295L6327HTSA1 BSP295L6327HTSA1 Infineon Technologies bsp295_rev1.3.pdf Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP295L6327HTSA1 BSP295L6327HTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP296 E6327 BSP296 E6327 Infineon Technologies bsp296_rev1.4.pdf Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296 L6327 BSP296 L6327 Infineon Technologies bsp296_rev1.4.pdf Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296 L6433 BSP296 L6433 Infineon Technologies bsp296_rev1.4.pdf Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296E6327 BSP296E6327 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296E6327 BSP296E6327 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6327HTSA1 BSP296L6327HTSA1 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6327HTSA1 BSP296L6327HTSA1 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6327HTSA1 BSP296L6327HTSA1 Infineon Technologies bsp296_rev1.4.pdf Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296L6433HTMA1 BSP296L6433HTMA1 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6433HTMA1 BSP296L6433HTMA1 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6433HTMA1 BSP296L6433HTMA1 Infineon Technologies bsp296_rev1.4.pdf Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296NH6327XTSA1 BSP296NH6327XTSA1 Infineon Technologies bsp296n_rev20.pdf Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296NH6433XTMA1 BSP296NH6433XTMA1 Infineon Technologies bsp296n_rev20.pdf Trans MOSFET N-CH 100V 1.2A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP297 E6327 BSP297 E6327 Infineon Technologies BSP297_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433b47825b013b51250a8528c2 Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
товар відсутній
BSP297 L6327 BSP297 L6327 Infineon Technologies bsp297_rev1.22.pdf Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP297E6327 BSP297E6327 Infineon Technologies bsp297_rev1.22.pdf Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP297L6327HTSA1 BSP297L6327HTSA1 Infineon Technologies bsp297_rev1.22.pdf Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298 E6327 BSP298 E6327 Infineon Technologies bsp298_rev2.2.pdf Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298 L6327 BSP298 L6327 Infineon Technologies bsp298_rev2.2.pdf Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298H6327XUSA1 BSP298H6327XUSA1 Infineon Technologies Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29 Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP298H6327XUSA1 BSP298H6327XUSA1 Infineon Technologies bsp298_rev2.6_.pdf Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298H6327XUSA1 BSP298H6327XUSA1 Infineon Technologies Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29 Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP299 E6327 BSP299 E6327 Infineon Technologies BSP299.pdf Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP299 L6327 BSP299 L6327 Infineon Technologies bsp299_rev2.0.pdf Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP299E6327 BSP299E6327 Infineon Technologies bsp299_rev2.0.pdf Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP254A
Код товару: 79931		 datasheet_bsp254a.pdf
BSP254A
Виробник: Philips
Транзистори > Польові P-канальні
Корпус: TO-92
Uds,V: 250 V
Id,A: 0,2 A
Rds(on),Om: 10 Ohm
Ciss, pF/Qg, nC: 65/
Монтаж: THT
товар відсутній
BSP298L6327
Код товару: 56811
Транзистори > IGBT
товар відсутній
BSP-2
Виробник: NEUTRIK
Category: Other Neutrik Connectors
Description: RED BUSH > NP*C
кількість в упаковці: 1 шт
товар відсутній
BSP-2
Виробник: Mueller Electric
Mueller Electric NEUTRIC RED STRAIN RELIEF
товар відсутній
BSP-2 pgurl_bsp.pdf
BSP-2
Виробник: Neutrik
Connector Accessories Boot Red Box
товар відсутній
BSP-2 bsp-color-2-1853882.pdf
BSP-2
Виробник: Neutrik
Phone Connectors RED BOOT FOR C-SERIE
товар відсутній
BSP-22U-12MK PDF_192080-2529910.pdf
Виробник: Belden Wire & Cable
Other Tools SECURE PATCH ENCL, 22U X 12D
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BSP-22U-12PK PDF_192080-2529910.pdf
Виробник: Belden Wire & Cable
Other Tools SECURE PATCH ENCL, 22U X 12D
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BSP-22U-12SK PDF_192080-2529910.pdf
Виробник: Belden Wire & Cable
Other Tools SECURE PATCH ENCL, 22U X 12D
товар відсутній
BSP-22U-6MK PDF_192080-2529910.pdf
Виробник: Belden Wire & Cable
Other Tools SECURE PATCH ENCL, 22U X 6D
товар відсутній
BSP-22U-6PK PDF_192080-2529910.pdf
Виробник: Belden Wire & Cable
Other Tools SECURE PATCH ENCL, 22U X 6D
товар відсутній
BSP-22U-6SK PDF_192080-2529910.pdf
Виробник: Belden Wire & Cable
Other Tools SECURE PATCH ENCL, 22U X 6D
товар відсутній
BSP20,115 221bsp19_20.pdf
BSP20,115
Виробник: NXP Semiconductors
Trans GP BJT NPN 250V 0.1A 1200mW Automotive 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP220,115 170946136634031bsp220_cnv.pdf
BSP220,115
Виробник: Nexperia
Trans MOSFET P-CH 200V 0.225A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP220,115 BSP220_CNV-2937893.pdf
BSP220,115
Виробник: Nexperia
MOSFET BSP220/SOT223/SC-73
товар відсутній
BSP225,115 75759804052040bsp225_cnv.pdf
BSP225,115
Виробник: Nexperia
Trans MOSFET P-CH 250V 0.225A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP225,115 75759804052040bsp225_cnv.pdf
BSP225,115
Виробник: NEXPERIA
Trans MOSFET P-CH 250V 0.225A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP230,135 BSP230.pdf
BSP230,135
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -300V; -210mA; Idm: -0.75A; 1.5W
Mounting: SMD
Technology: DMOS
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.75A
Case: SC73; SOT223
Drain-source voltage: -300V
Drain current: -210mA
On-state resistance: 17Ω
Type of transistor: P-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
товар відсутній
BSP230,135 174496733120837bsp230.pdf
BSP230,135
Виробник: Nexperia
Trans MOSFET P-CH 300V 0.21A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP230,135 BSP230.pdf
BSP230,135
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 300V 210MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 17Ohm @ 170mA, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.55V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
товар відсутній
BSP230,135 2928bsp230.pdf
BSP230,135
Виробник: NEXPERIA
Trans MOSFET P-CH 300V 0.21A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP230,135 174496733120837bsp230.pdf
BSP230,135
Виробник: Nexperia
Trans MOSFET P-CH 300V 0.21A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP250,115 74259007555508bsp250.pdf
BSP250,115
Виробник: Nexperia
Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP250,135 74259007555508bsp250.pdf
BSP250,135
Виробник: NEXPERIA
Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP250,135 74259007555508bsp250.pdf
BSP250,135
Виробник: Nexperia
Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
товар відсутній
BSP254A,126 bsp254_a_cnv_2.pdf
BSP254A,126
Виробник: NXP Semiconductors
Trans MOSFET P-CH 250V 0.2A 3-Pin TO-92 Ammo
товар відсутній
BSP295 L6327 bsp295_rev1.3.pdf
BSP295 L6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP295E6327 bsp295_rev1.3.pdf
BSP295E6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP295E6327 Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP295E6327T Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295E6327T
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP295H6327XTSA1 BSP295H6327XTSA1.pdf
BSP295H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 60V
Drain current: 1.8A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
товар відсутній
BSP295H6327XTSA1 BSP295H6327XTSA1.pdf
BSP295H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 60V
Drain current: 1.8A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
BSP295L6327HTSA1 Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP295L6327HTSA1 bsp295_rev1.3.pdf
BSP295L6327HTSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP295L6327HTSA1 Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
товар відсутній
BSP296 E6327 bsp296_rev1.4.pdf
BSP296 E6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296 L6327 bsp296_rev1.4.pdf
BSP296 L6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296 L6433 bsp296_rev1.4.pdf
BSP296 L6433
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296E6327 BSP296.pdf
BSP296E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296E6327 BSP296.pdf
BSP296E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6327HTSA1 BSP296.pdf
BSP296L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6327HTSA1 BSP296.pdf
BSP296L6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6327HTSA1 bsp296_rev1.4.pdf
BSP296L6327HTSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296L6433HTMA1 BSP296.pdf
BSP296L6433HTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6433HTMA1 BSP296.pdf
BSP296L6433HTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
товар відсутній
BSP296L6433HTMA1 bsp296_rev1.4.pdf
BSP296L6433HTMA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296NH6327XTSA1 bsp296n_rev20.pdf
BSP296NH6327XTSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP296NH6433XTMA1 bsp296n_rev20.pdf
BSP296NH6433XTMA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 100V 1.2A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP297 E6327 BSP297_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433b47825b013b51250a8528c2
BSP297 E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
товар відсутній
BSP297 L6327 bsp297_rev1.22.pdf
BSP297 L6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP297E6327 bsp297_rev1.22.pdf
BSP297E6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP297L6327HTSA1 bsp297_rev1.22.pdf
BSP297L6327HTSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298 E6327 bsp298_rev2.2.pdf
BSP298 E6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298 L6327 bsp298_rev2.2.pdf
BSP298 L6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298H6327XUSA1 Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29
BSP298H6327XUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP298H6327XUSA1 bsp298_rev2.6_.pdf
BSP298H6327XUSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP298H6327XUSA1 Infineon-BSP298-DS-v02_06-en.pdf?fileId=db3a30433b47825b013b4c05f65f0f29
BSP298H6327XUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP299 E6327 BSP299.pdf
BSP299 E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BSP299 L6327 bsp299_rev2.0.pdf
BSP299 L6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
BSP299E6327 bsp299_rev2.0.pdf
BSP299E6327
Виробник: Infineon Technologies
Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
товар відсутній
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