| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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CPC9909N | IXYS |
 Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: tube |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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CPC9909NE | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Operating temperature: -55...85°C Case: SO8-EP Type of integrated circuit: driver Input voltage: 8...550V Integrated circuit features: linear dimming; PWM Kind of package: tube Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Mounting: SMD |
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| CPC9909NETR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: reel; tape |
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IXTA200N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns Case: TO263 Polarisation: unipolar On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 360W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Kind of channel: enhanced Mounting: SMD Reverse recovery time: 49ns Drain-source voltage: 55V Drain current: 200A |
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DAA200X1800NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B Max. off-state voltage: 1.8kV Semiconductor structure: double independent Case: SOT227B Type of module: diode Features of semiconductor devices: avalanche breakdown effect Max. forward voltage: 1.21V Load current: 100A x2 Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw |
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DAA200XA1800NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B Max. off-state voltage: 1.8kV Semiconductor structure: double independent Case: SOT227B Type of module: diode Features of semiconductor devices: avalanche breakdown effect Max. forward voltage: 1.21V Load current: 100A x2 Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw |
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DMA200X1600NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.6kV; If: 100Ax2; SOT227B Max. off-state voltage: 1.6kV Semiconductor structure: double independent Case: SOT227B Type of module: diode Max. forward voltage: 0.8V Load current: 100A x2 Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw |
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DMA200XA1600NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.6kV; If: 100Ax2; SOT227B Max. off-state voltage: 1.6kV Semiconductor structure: double independent Case: SOT227B Type of module: diode Max. forward voltage: 0.8V Load current: 100A x2 Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw |
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| CMA40E1600HR | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube Mounting: THT Case: ISO247™ Kind of package: tube Max. forward impulse current: 470A Gate current: 50/80mA Max. off-state voltage: 1.6kV Load current: 40A Max. load current: 63A Type of thyristor: thyristor |
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DMA40U1800GU | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.8kV Max. forward voltage: 0.74V Load current: 40A Max. forward impulse current: 370A Electrical mounting: THT Version: flat Type of bridge rectifier: three-phase Case: GUFP |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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| MCMA400PD1600PTSF | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA Max. off-state voltage: 1.6kV Electrical mounting: Press-Fit; screw Load current: 400A Max. load current: 630A Type of module: diode-thyristor Semiconductor structure: double series Case: SimBus F Max. forward impulse current: 10kA |
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IXFP3N120 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO220AB Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
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IXFP6N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 250W Case: TO220AB Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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DSEI2x161-06P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 147Ax2; ECO-PAC 2 Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 147A x2 Case: ECO-PAC 2 Max. forward voltage: 1.45V Max. forward impulse current: 1.2kA Electrical mounting: THT Mechanical mounting: screw |
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MDD175-28N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.8kV Load current: 240A Case: Y1-CU Max. forward voltage: 1.01V Max. forward impulse current: 7.23kA Electrical mounting: screw Mechanical mounting: screw |
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IXTH300N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 145nC Kind of channel: enhanced Reverse recovery time: 53ns Drain-source voltage: 40V Drain current: 300A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet |
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IXTH30N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet |
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IXTH30N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet |
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IXFB210N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 210A Power dissipation: 1.5kW Case: PLUS264™ On-state resistance: 10.5mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced |
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IXFN210N20P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 188A Pulsed drain current: 600A Power dissipation: 1.07kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 10.5mΩ Gate charge: 255nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFR102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™ Mounting: THT Polarisation: unipolar Kind of package: tube Gate charge: 224nC Kind of channel: enhanced Case: ISOPLUS247™ Drain-source voltage: 300V Drain current: 60A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 250W |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFN32N80P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A Case: SOT227B On-state resistance: 0.27Ω Drain current: 29A Drain-source voltage: 800V Power dissipation: 625W Reverse recovery time: 250ns Polarisation: unipolar Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 150nC Technology: HiPerFET™; PolarHV™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 250A |
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IXFN44N80P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 39A Pulsed drain current: 100A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.19Ω Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN44N80Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 37A Pulsed drain current: 130A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.19Ω Gate charge: 185nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN60N80P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 53A Pulsed drain current: 150A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.14Ω Gate charge: 250nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN62N80Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A Case: SOT227B On-state resistance: 0.14Ω Drain current: 49A Drain-source voltage: 800V Power dissipation: 960W Reverse recovery time: 300ns Polarisation: unipolar Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 0.27µC Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 180A |
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IXKN45N80C | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 380W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 74mΩ Gate charge: 360nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 800ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTP1N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 42W Case: TO220AB On-state resistance: 14Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 700ns |
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IXTY1N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 42W Case: TO252 On-state resistance: 14Ω Mounting: SMD Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 700ns |
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IXTA60N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Drain current: 60A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 176W Features of semiconductor devices: thrench gate power mosfet Gate charge: 49nC Kind of channel: enhanced Reverse recovery time: 59ns Drain-source voltage: 100V |
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IXTP60N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Drain current: 60A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 176W Features of semiconductor devices: thrench gate power mosfet Gate charge: 49nC Kind of channel: enhanced Reverse recovery time: 59ns Drain-source voltage: 100V |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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IXFK360N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: TO264 On-state resistance: 2.9mΩ Mounting: THT Gate charge: 525nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFN360N10T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A Semiconductor structure: single transistor Reverse recovery time: 130ns Drain-source voltage: 100V Drain current: 360A On-state resistance: 2.6mΩ Power dissipation: 830W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 525nC Technology: GigaMOS™; HiPerFET™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 900A Case: SOT227B |
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IXFX360N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 2.9mΩ Mounting: THT Gate charge: 525nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXTP160N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Power dissipation: 430W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 132nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 60ns |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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IXTA3N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 17ns |
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IXTA3N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO263HV On-state resistance: 6Ω Mounting: SMD Gate charge: 1.02µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 17ns |
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IXTP3N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 5.5Ω Mounting: THT Gate charge: 1.02µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 17ns |
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IXFA4N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 150W Case: TO263 Mounting: SMD Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
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IXFA4N100Q | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 150W Case: TO263AA Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 39nC Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFP4N100PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.1A Pulsed drain current: 8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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IXTH4N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Power dissipation: 290W Case: TO247-3 Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.1µs |
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IXFK24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 1kW Case: TO264 On-state resistance: 440mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
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IXFN24N100 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Pulsed drain current: 96A Power dissipation: 568W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 390mΩ Gate charge: 250nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN44N100P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 110A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.22Ω Gate charge: 0.35µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN44N100Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 38A Pulsed drain current: 110A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.22Ω Gate charge: 264nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFR24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 490mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFX24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 440mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
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IXTX24N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.4Ω Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns |
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IXTA1R4N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO263 Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: SMD Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
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IXTP1R4N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: THT Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
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IXTY1R4N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: SMD Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
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DSA1-12D | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case Kind of package: tube Mounting: THT Case: FP-Case Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect Max. off-state voltage: 1.2kV Max. forward voltage: 1.34V Load current: 2.3A Semiconductor structure: single diode Max. forward impulse current: 110A |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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IXTH48N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
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IXFH60N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 120A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 180ns |
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IXFH60N65X2-4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Power dissipation: 780W Case: TO247-4 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns |
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IXFT60N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Power dissipation: 780W Case: TO268 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: SMD Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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IXXH60N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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IXXH60N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 94ns Turn-off time: 208ns |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXXH60N65C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 110ns Turn-off time: 164ns |
товар відсутній |
| CPC9909N |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 107.23 грн |
| 5+ | 88.35 грн |
| 11+ | 79.94 грн |
| 25+ | 79.24 грн |
| 28+ | 75.73 грн |
| 100+ | 73.63 грн |
| CPC9909NE |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Operating temperature: -55...85°C
Case: SO8-EP
Type of integrated circuit: driver
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Operating temperature: -55...85°C
Case: SO8-EP
Type of integrated circuit: driver
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
товар відсутній
| CPC9909NETR |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товар відсутній
| IXTA200N055T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Case: TO263
Polarisation: unipolar
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhanced
Mounting: SMD
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Case: TO263
Polarisation: unipolar
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhanced
Mounting: SMD
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
товар відсутній
| DAA200X1800NA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Features of semiconductor devices: avalanche breakdown effect
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Features of semiconductor devices: avalanche breakdown effect
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DAA200XA1800NA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Features of semiconductor devices: avalanche breakdown effect
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Features of semiconductor devices: avalanche breakdown effect
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DMA200X1600NA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.6kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Max. forward voltage: 0.8V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.6kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Max. forward voltage: 0.8V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DMA200XA1600NA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.6kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Max. forward voltage: 0.8V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.6kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.6kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Max. forward voltage: 0.8V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| CMA40E1600HR |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Mounting: THT
Case: ISO247™
Kind of package: tube
Max. forward impulse current: 470A
Gate current: 50/80mA
Max. off-state voltage: 1.6kV
Load current: 40A
Max. load current: 63A
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Mounting: THT
Case: ISO247™
Kind of package: tube
Max. forward impulse current: 470A
Gate current: 50/80mA
Max. off-state voltage: 1.6kV
Load current: 40A
Max. load current: 63A
Type of thyristor: thyristor
товар відсутній
| DMA40U1800GU |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.8kV
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: three-phase
Case: GUFP
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 846.54 грн |
| 2+ | 563.78 грн |
| 5+ | 532.93 грн |
| MCMA400PD1600PTSF |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Electrical mounting: Press-Fit; screw
Load current: 400A
Max. load current: 630A
Type of module: diode-thyristor
Semiconductor structure: double series
Case: SimBus F
Max. forward impulse current: 10kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Electrical mounting: Press-Fit; screw
Load current: 400A
Max. load current: 630A
Type of module: diode-thyristor
Semiconductor structure: double series
Case: SimBus F
Max. forward impulse current: 10kA
товар відсутній
| IXFP3N120 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFP6N120P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO220AB
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 595.07 грн |
| 3+ | 396.19 грн |
| 6+ | 374.45 грн |
| DSEI2x161-06P |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 147Ax2; ECO-PAC 2
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 147A x2
Case: ECO-PAC 2
Max. forward voltage: 1.45V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 147Ax2; ECO-PAC 2
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 147A x2
Case: ECO-PAC 2
Max. forward voltage: 1.45V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
товар відсутній
| MDD175-28N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.8kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.8kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXTH300N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXTH30N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
товар відсутній
| IXTH30N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
товар відсутній
| IXFB210N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 210A
Power dissipation: 1.5kW
Case: PLUS264™
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 210A
Power dissipation: 1.5kW
Case: PLUS264™
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFN210N20P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 188A
Pulsed drain current: 600A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 10.5mΩ
Gate charge: 255nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 188A
Pulsed drain current: 600A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 10.5mΩ
Gate charge: 255nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFR102N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhanced
Case: ISOPLUS247™
Drain-source voltage: 300V
Drain current: 60A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Gate charge: 224nC
Kind of channel: enhanced
Case: ISOPLUS247™
Drain-source voltage: 300V
Drain current: 60A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 897.13 грн |
| 3+ | 788.17 грн |
| IXFN32N80P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
On-state resistance: 0.27Ω
Drain current: 29A
Drain-source voltage: 800V
Power dissipation: 625W
Reverse recovery time: 250ns
Polarisation: unipolar
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 150nC
Technology: HiPerFET™; PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 250A
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
On-state resistance: 0.27Ω
Drain current: 29A
Drain-source voltage: 800V
Power dissipation: 625W
Reverse recovery time: 250ns
Polarisation: unipolar
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 150nC
Technology: HiPerFET™; PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 250A
товар відсутній
| IXFN44N80P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN44N80Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN60N80P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN62N80Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
On-state resistance: 0.14Ω
Drain current: 49A
Drain-source voltage: 800V
Power dissipation: 960W
Reverse recovery time: 300ns
Polarisation: unipolar
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 180A
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
On-state resistance: 0.14Ω
Drain current: 49A
Drain-source voltage: 800V
Power dissipation: 960W
Reverse recovery time: 300ns
Polarisation: unipolar
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 180A
товар відсутній
| IXKN45N80C |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTP1N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 14Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 14Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
| IXTY1N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
| IXTA60N10T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
товар відсутній
| IXTP60N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.15 грн |
| 4+ | 110.79 грн |
| 10+ | 88.35 грн |
| 26+ | 83.45 грн |
| IXFK360N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFN360N10T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Semiconductor structure: single transistor
Reverse recovery time: 130ns
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.6mΩ
Power dissipation: 830W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Semiconductor structure: single transistor
Reverse recovery time: 130ns
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.6mΩ
Power dissipation: 830W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: SOT227B
товар відсутній
| IXFX360N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 918.28 грн |
| 2+ | 608.66 грн |
| 4+ | 575.7 грн |
| IXTP160N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 60ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 60ns
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.31 грн |
| 3+ | 220.18 грн |
| 5+ | 175.31 грн |
| 13+ | 165.49 грн |
| IXTA3N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
| IXTA3N100D2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
| IXTP3N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
| IXFA4N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFA4N100Q |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFP4N100PM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| IXTH4N100L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
товар відсутній
| IXFK24N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFN24N100 | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN44N100P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN44N100Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3777.33 грн |
| IXFR24N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1677.22 грн |
| 2+ | 1472.57 грн |
| IXFX24N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTX24N100 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
| IXTA1R4N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
| IXTP1R4N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: THT
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: THT
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
| IXTY1R4N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
| DSA1-12D |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Kind of package: tube
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.34V
Load current: 2.3A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Kind of package: tube
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.34V
Load current: 2.3A
Semiconductor structure: single diode
Max. forward impulse current: 110A
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 319.43 грн |
| 4+ | 212.47 грн |
| 11+ | 200.55 грн |
| IXTH48N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
товар відсутній
| IXFH60N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
товар відсутній
| IXFH60N65X2-4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
| IXFT60N65X2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 838.99 грн |
| 2+ | 574.3 грн |
| 4+ | 542.75 грн |
| IXXH60N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.79 грн |
| 3+ | 321.16 грн |
| 8+ | 303.63 грн |
| IXXH60N65B4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 867.68 грн |
| 2+ | 603.75 грн |
| 3+ | 603.05 грн |
| 4+ | 570.8 грн |
| IXXH60N65C4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
товар відсутній