| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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CS45-08io1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Mounting: THT Case: TO247AD Kind of package: tube Max. off-state voltage: 0.8kV Max. load current: 71A Type of thyristor: thyristor Load current: 45A Gate current: 80mA Max. forward impulse current: 520A |
товар відсутній |
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CS45-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Mounting: THT Case: TO247AD Kind of package: tube Max. off-state voltage: 1.2kV Max. load current: 71A Type of thyristor: thyristor Load current: 45A Gate current: 80mA Max. forward impulse current: 520A |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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CS45-16IO1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Mounting: THT Case: TO247AD Kind of package: tube Max. off-state voltage: 1.6kV Max. load current: 71A Type of thyristor: thyristor Load current: 45A Gate current: 80mA Max. forward impulse current: 520A |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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CS45-16IO1R | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Mounting: THT Case: TO247AD Kind of package: tube Max. off-state voltage: 1.6kV Max. load current: 71A Type of thyristor: thyristor Load current: 45A Gate current: 80mA Max. forward impulse current: 520A |
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| MCNA40PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 63A Max. forward voltage: 1.29V Load current: 40A Semiconductor structure: double series Max. forward impulse current: 0.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCD95-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Max. off-state voltage: 1.6kV Max. load current: 182A Load current: 116A Case: TO240AA Kind of package: bulk Max. forward impulse current: 2.25kA Semiconductor structure: double series Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Electrical mounting: FASTON connectors; screw Type of module: diode-thyristor Max. forward voltage: 1.28V |
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| MCNA120PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 190A Max. forward voltage: 1.34V Load current: 120A Semiconductor structure: double series Max. forward impulse current: 2.2kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA55PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 86A Max. forward voltage: 1.2V Load current: 55A Semiconductor structure: double series Max. forward impulse current: 1kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA75PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 118A Max. forward voltage: 1.21V Load current: 75A Semiconductor structure: double series Max. forward impulse current: 1.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA95PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 149A Max. forward voltage: 1.24V Load current: 95A Semiconductor structure: double series Max. forward impulse current: 1.7kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCD26-08IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Kind of package: bulk Max. off-state voltage: 0.8kV Max. load current: 42A Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.85V |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| MCD162-16io1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Max. load current: 300A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD310-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 0.8kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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MCD56-08IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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MCD95-08io1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 116A; TO240AA; Ufmax: 1.28V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 800V Load current: 116A Case: TO240AA Max. forward voltage: 1.28V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 180A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCNA180PD2200YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: Y4-M6 Max. off-state voltage: 2.2kV Max. load current: 280A Max. forward voltage: 1.18V Load current: 180A Semiconductor structure: double series Max. forward impulse current: 5.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA220PD2200YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: Y4-M6 Max. off-state voltage: 2.2kV Max. load current: 345A Max. forward voltage: 1.19V Load current: 220A Semiconductor structure: double series Max. forward impulse current: 7.2kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCD26-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.2kV Max. load current: 42A Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 440A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.85V |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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MCD26-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.4kV Max. load current: 42A Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.85V |
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MCD26-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.6kV Max. load current: 42A Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.85V |
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DPF240X400NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw Case: SOT227B Max. forward impulse current: 1.2kA Max. off-state voltage: 0.4kV Max. forward voltage: 1.06V Load current: 120A x2 Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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IXTP150N15X4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns Drain-source voltage: 150V Drain current: 150A On-state resistance: 7.2mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 105nC Kind of channel: enhanced Mounting: THT Case: TO220AB Reverse recovery time: 100ns |
на замовлення 206 шт: термін постачання 21-30 дні (днів) |
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IXTP150N15X4A | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A Application: automotive industry Drain-source voltage: 150V Drain current: 150A On-state resistance: 7.2mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 105nC Technology: X4-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 260A Mounting: THT Case: TO220AB Reverse recovery time: 93ns |
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IXTQ150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P Drain-source voltage: 150V Drain current: 150A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 0.19µC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P Reverse recovery time: 150ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXTA3N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns Drain-source voltage: 1.5kV Drain current: 3A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 38.6nC Kind of channel: enhanced Mounting: SMD Case: TO263 Reverse recovery time: 900ns |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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IXTA4N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 44.5nC Kind of channel: enhanced Mounting: SMD Case: TO263 Reverse recovery time: 900ns |
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IXTH3N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns Drain-source voltage: 1.5kV Drain current: 3A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 38.6nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 900ns |
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IXTH4N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 44.5nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 900ns |
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IXTH6N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us Drain-source voltage: 1.5kV Drain current: 6A Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 67nC Kind of channel: enhanced Mounting: THT Case: TO247-3 Reverse recovery time: 1.5µs |
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IXTJ4N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns Drain-source voltage: 1.5kV Drain current: 2.5A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 110W Polarisation: unipolar Kind of package: tube Gate charge: 44.5nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: ISO247™ Reverse recovery time: 900ns |
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IXTJ6N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us Drain-source voltage: 1.5kV Drain current: 3A On-state resistance: 3.85Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: ISO247™ Reverse recovery time: 1.5µs |
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IXTK8N150L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us Drain-source voltage: 1.5kV Drain current: 8A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 700W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 250nC Kind of channel: enhanced Mounting: THT Case: TO264 Reverse recovery time: 1.7µs |
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IXTN8N150L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A Drain-source voltage: 1.5kV Drain current: 7.5A On-state resistance: 3.6Ω Power dissipation: 545W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 250nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 20A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 1.7µs |
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IXTQ3N150M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF Drain-source voltage: 1.5kV Drain current: 1.83A On-state resistance: 7.3Ω Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 38.6nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 9A Mounting: THT Case: TO3PF Reverse recovery time: 900ns |
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IXTT4N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 44.5nC Kind of channel: enhanced Mounting: SMD Case: TO268HV Reverse recovery time: 900ns |
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IXTT6N150 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us Drain-source voltage: 1.5kV Drain current: 6A Type of transistor: N-MOSFET Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 67nC Kind of channel: enhanced Mounting: SMD Case: TO268 Reverse recovery time: 1.5µs |
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DSEC60-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 600V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO247-3 Max. forward voltage: 1.6V Power dissipation: 165W Reverse recovery time: 35ns Technology: HiPerFRED™ |
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DSEC60-06B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 600V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: TO247-3 Max. forward voltage: 2.51V Power dissipation: 165W Reverse recovery time: 30ns Technology: HiPerFRED™ |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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DSEC60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.74V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
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DSEK60-02A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 34A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 325A Case: TO247-3 Max. forward voltage: 1.1V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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DSEK60-02AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™ Mounting: THT Load current: 34A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 325A Power dissipation: 125W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: ISOPLUS247™ Max. off-state voltage: 200V Max. forward voltage: 1.1V |
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DSEK60-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 300A Case: TO247-3 Max. forward voltage: 1.4V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
на замовлення 293 шт: термін постачання 21-30 дні (днів) |
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DSEK60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.55V Power dissipation: 125W Reverse recovery time: 40ns Technology: FRED |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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MCC26-16io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.6kV Gate current: 100/200mA Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.27V Max. forward impulse current: 520A Type of module: thyristor Load current: 27A |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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MCD312-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.6kV Kind of package: bulk Max. forward voltage: 1.06V Load current: 320A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 9.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Max. load current: 520A |
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IXFB44N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 305nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
товар відсутній |
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IXFB44N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.56kW Case: PLUS264™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 264nC Kind of package: tube Kind of channel: enhanced |
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IXFP10N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
на замовлення 155 шт: термін постачання 21-30 дні (днів) |
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IXTP10N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IXFN110N60P3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Pulsed drain current: 275A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Gate charge: 254nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFA10N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO263 On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
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IXFB110N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 110A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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CPC9909NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: reel; tape |
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IXTH16N20D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns Mounting: THT Kind of package: tube Case: TO247-3 Power dissipation: 695W Reverse recovery time: 607ns Polarisation: unipolar Kind of channel: depleted Drain-source voltage: 200V Drain current: 16A On-state resistance: 80mΩ Type of transistor: N-MOSFET |
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IXTH16P60P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Power dissipation: 460W Reverse recovery time: 440ns Technology: PolarP™ Polarisation: unipolar Gate charge: 92nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -600V Drain current: -16A On-state resistance: 720mΩ Type of transistor: P-MOSFET |
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CPC9909N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: tube |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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CPC9909NE | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Operating temperature: -55...85°C Case: SO8-EP Type of integrated circuit: driver Input voltage: 8...550V Integrated circuit features: linear dimming; PWM Kind of package: tube Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Mounting: SMD |
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| CPC9909NETR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: reel; tape |
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IXTA200N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns Case: TO263 Polarisation: unipolar On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 360W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Kind of channel: enhanced Mounting: SMD Reverse recovery time: 49ns Drain-source voltage: 55V Drain current: 200A |
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DAA200X1800NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B Max. off-state voltage: 1.8kV Semiconductor structure: double independent Case: SOT227B Type of module: diode Features of semiconductor devices: avalanche breakdown effect Max. forward voltage: 1.21V Load current: 100A x2 Max. forward impulse current: 1.5kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
| CS45-08io1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
товар відсутній
| CS45-12IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 345.86 грн |
| 3+ | 284 грн |
| 4+ | 255.25 грн |
| 9+ | 241.22 грн |
| 30+ | 237.71 грн |
| CS45-16IO1 | |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 419.12 грн |
| 3+ | 278.39 грн |
| 9+ | 262.96 грн |
| 120+ | 259.45 грн |
| CS45-16IO1R |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 1.6kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
товар відсутній
| MCNA40PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 63A
Max. forward voltage: 1.29V
Load current: 40A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 63A
Max. forward voltage: 1.29V
Load current: 40A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCD95-16io1 |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Max. load current: 182A
Load current: 116A
Case: TO240AA
Kind of package: bulk
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Type of module: diode-thyristor
Max. forward voltage: 1.28V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Max. load current: 182A
Load current: 116A
Case: TO240AA
Kind of package: bulk
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Type of module: diode-thyristor
Max. forward voltage: 1.28V
товар відсутній
| MCNA120PD2200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 190A
Max. forward voltage: 1.34V
Load current: 120A
Semiconductor structure: double series
Max. forward impulse current: 2.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 190A
Max. forward voltage: 1.34V
Load current: 120A
Semiconductor structure: double series
Max. forward impulse current: 2.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA55PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 86A
Max. forward voltage: 1.2V
Load current: 55A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 86A
Max. forward voltage: 1.2V
Load current: 55A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA75PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 118A
Max. forward voltage: 1.21V
Load current: 75A
Semiconductor structure: double series
Max. forward impulse current: 1.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 118A
Max. forward voltage: 1.21V
Load current: 75A
Semiconductor structure: double series
Max. forward impulse current: 1.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA95PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 149A
Max. forward voltage: 1.24V
Load current: 95A
Semiconductor structure: double series
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 149A
Max. forward voltage: 1.24V
Load current: 95A
Semiconductor structure: double series
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCD26-08IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 0.8kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1350.23 грн |
| 2+ | 1185.07 грн |
| MCD162-16io1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD310-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD56-08IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1565.45 грн |
| 2+ | 1375.1 грн |
| 3+ | 1374.4 грн |
| MCD95-08io1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 116A; TO240AA; Ufmax: 1.28V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 800V
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 180A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 116A; TO240AA; Ufmax: 1.28V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 800V
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 180A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCNA180PD2200YB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 280A
Max. forward voltage: 1.18V
Load current: 180A
Semiconductor structure: double series
Max. forward impulse current: 5.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 280A
Max. forward voltage: 1.18V
Load current: 180A
Semiconductor structure: double series
Max. forward impulse current: 5.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA220PD2200YB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 345A
Max. forward voltage: 1.19V
Load current: 220A
Semiconductor structure: double series
Max. forward impulse current: 7.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 345A
Max. forward voltage: 1.19V
Load current: 220A
Semiconductor structure: double series
Max. forward impulse current: 7.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCD26-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 440A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.2kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 440A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1414.42 грн |
| 2+ | 1241.87 грн |
| MCD26-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
товар відсутній
| MCD26-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
товар відсутній
| DPF240X400NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2629.48 грн |
| IXTP150N15X4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Reverse recovery time: 100ns
на замовлення 206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.04 грн |
| 3+ | 356.92 грн |
| 7+ | 337.29 грн |
| 50+ | 330.98 грн |
| IXTP150N15X4A |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A
Application: automotive industry
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Technology: X4-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 260A
Mounting: THT
Case: TO220AB
Reverse recovery time: 93ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A
Application: automotive industry
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 105nC
Technology: X4-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 260A
Mounting: THT
Case: TO220AB
Reverse recovery time: 93ns
товар відсутній
| IXTQ150N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 150ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 613.19 грн |
| IXTA3N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 738.55 грн |
| 2+ | 491.56 грн |
| 5+ | 464.91 грн |
| IXTA4N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
товар відсутній
| IXTH3N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 900ns
товар відсутній
| IXTH4N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 900ns
товар відсутній
| IXTH6N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us
Drain-source voltage: 1.5kV
Drain current: 6A
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 67nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us
Drain-source voltage: 1.5kV
Drain current: 6A
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 67nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Reverse recovery time: 1.5µs
товар відсутній
| IXTJ4N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 900ns
товар відсутній
| IXTJ6N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 3.85Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 1.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 125W; ISO247™; 1.5us
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 3.85Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: ISO247™
Reverse recovery time: 1.5µs
товар відсутній
| IXTK8N150L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.7µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; TO264; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Reverse recovery time: 1.7µs
товар відсутній
| IXTN8N150L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Drain-source voltage: 1.5kV
Drain current: 7.5A
On-state resistance: 3.6Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 250nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 20A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 1.7µs
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Drain-source voltage: 1.5kV
Drain current: 7.5A
On-state resistance: 3.6Ω
Power dissipation: 545W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 250nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 20A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 1.7µs
товар відсутній
| IXTQ3N150M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Drain-source voltage: 1.5kV
Drain current: 1.83A
On-state resistance: 7.3Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9A
Mounting: THT
Case: TO3PF
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Drain-source voltage: 1.5kV
Drain current: 1.83A
On-state resistance: 7.3Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9A
Mounting: THT
Case: TO3PF
Reverse recovery time: 900ns
товар відсутній
| IXTT4N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268HV
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268HV
Reverse recovery time: 900ns
товар відсутній
| IXTT6N150 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us
Drain-source voltage: 1.5kV
Drain current: 6A
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Reverse recovery time: 1.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO268; 1.5us
Drain-source voltage: 1.5kV
Drain current: 6A
Type of transistor: N-MOSFET
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
Reverse recovery time: 1.5µs
товар відсутній
| DSEC60-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 600V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 600V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
товар відсутній
| DSEC60-06B |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 600V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 600V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 412.32 грн |
| 3+ | 260.85 грн |
| 9+ | 246.83 грн |
| DSEC60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
товар відсутній
| DSEK60-02A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-3
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 422.14 грн |
| 3+ | 280.49 грн |
| 8+ | 265.76 грн |
| DSEK60-02AR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Mounting: THT
Load current: 34A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 325A
Power dissipation: 125W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; tube; Ifsm: 325A; ISOPLUS247™
Mounting: THT
Load current: 34A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 325A
Power dissipation: 125W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: ISOPLUS247™
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
товар відсутній
| DSEK60-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 300A
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 293 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 453.85 грн |
| 3+ | 335.89 грн |
| 7+ | 317.65 грн |
| 30+ | 312.75 грн |
| DSEK60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 557.31 грн |
| 3+ | 370.95 грн |
| 7+ | 350.61 грн |
| MCC26-16io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Type of module: thyristor
Load current: 27A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Gate current: 100/200mA
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Type of module: thyristor
Load current: 27A
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1674.2 грн |
| 2+ | 1469.76 грн |
| MCD312-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
товар відсутній
| IXFB44N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| IXFB44N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 44A; 1560W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.56kW
Case: PLUS264™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 264nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFP10N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
на замовлення 155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219 грн |
| 3+ | 182.32 грн |
| 6+ | 145.15 грн |
| 16+ | 137.44 грн |
| IXTP10N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.42 грн |
| 3+ | 173.9 грн |
| 6+ | 138.14 грн |
| IXFN110N60P3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFA10N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
| IXFB110N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| CPC9909NTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товар відсутній
| IXTH16N20D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 695W
Reverse recovery time: 607ns
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 695W
Reverse recovery time: 607ns
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 200V
Drain current: 16A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
товар відсутній
| IXTH16P60P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 460W
Reverse recovery time: 440ns
Technology: PolarP™
Polarisation: unipolar
Gate charge: 92nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 460W
Reverse recovery time: 440ns
Technology: PolarP™
Polarisation: unipolar
Gate charge: 92nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
товар відсутній
| CPC9909N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 107.23 грн |
| 5+ | 88.35 грн |
| 11+ | 79.94 грн |
| 25+ | 79.24 грн |
| 28+ | 75.73 грн |
| 100+ | 73.63 грн |
| CPC9909NE |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Operating temperature: -55...85°C
Case: SO8-EP
Type of integrated circuit: driver
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Operating temperature: -55...85°C
Case: SO8-EP
Type of integrated circuit: driver
Input voltage: 8...550V
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
товар відсутній
| CPC9909NETR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товар відсутній
| IXTA200N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Case: TO263
Polarisation: unipolar
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhanced
Mounting: SMD
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Case: TO263
Polarisation: unipolar
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhanced
Mounting: SMD
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
товар відсутній
| DAA200X1800NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Features of semiconductor devices: avalanche breakdown effect
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Max. off-state voltage: 1.8kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Features of semiconductor devices: avalanche breakdown effect
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Electrical mounting: screw
Mechanical mounting: screw
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