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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN62N80Q3 IXFN62N80Q3 IXYS IXFN62N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
On-state resistance: 0.14Ω
Drain current: 49A
Drain-source voltage: 800V
Power dissipation: 960W
Reverse recovery time: 300ns
Polarisation: unipolar
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 180A
товар відсутній
IXKN45N80C IXKN45N80C IXYS IXKN45N80C.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXTP1N80P IXTP1N80P IXYS IXTA(P,U,Y)1N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 14Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
IXTY1N80P IXTY1N80P IXYS IXTA(P,U,Y)1N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
IXTA60N10T IXTA60N10T IXYS IXTA(P)60N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
товар відсутній
IXTP60N10T IXTP60N10T IXYS IXTA(P)60N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
3+130.4 грн
4+ 109.33 грн
10+ 87.18 грн
26+ 82.34 грн
Мінімальне замовлення: 3
IXFK360N10T IXFK360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Semiconductor structure: single transistor
Reverse recovery time: 130ns
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.6mΩ
Power dissipation: 830W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: SOT227B
товар відсутній
IXFX360N10T IXFX360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+906.12 грн
2+ 600.6 грн
4+ 568.08 грн
IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 60ns
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
2+260.81 грн
3+ 217.27 грн
5+ 172.98 грн
13+ 163.3 грн
Мінімальне замовлення: 2
IXTA3N100D2 IXTA3N100D2 IXYS IXTA(P)3N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
IXTA3N100D2HV IXTA3N100D2HV IXYS IXTA3N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
IXFA4N100P IXFA4N100P IXYS IXFA(P)4N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFA4N100Q IXFA4N100Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
IXFP4N100PM IXFP4N100PM IXYS IXFP4N100PM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXTH4N100L IXTH4N100L IXYS IXTH4N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
товар відсутній
IXFK24N100Q3 IXFK24N100Q3 IXYS IXFK(X)24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFN24N100 IXFN24N100 IXYS IXFN24N100-DTE.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN44N100P IXFN44N100P IXYS IXFN44N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+3727.3 грн
IXFR24N100Q3 IXFR24N100Q3 IXYS IXFR24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1655 грн
2+ 1453.06 грн
IXFX24N100Q3 IXFX24N100Q3 IXYS IXFK(X)24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTX24N100 IXTX24N100 IXYS IXTX24N100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
IXTA1R4N100P IXTA1R4N100P IXYS IXTA(P,Y)1R4N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
IXTP1R4N100P IXTP1R4N100P IXYS IXTA(P,Y)1R4N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: THT
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
IXTY1R4N100P IXTY1R4N100P IXYS IXTA(P,Y)1R4N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
DSA1-12D DSA1-12D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Kind of package: tube
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.34V
Load current: 2.3A
Semiconductor structure: single diode
Max. forward impulse current: 110A
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
2+315.2 грн
4+ 209.66 грн
11+ 197.89 грн
Мінімальне замовлення: 2
IXTH48N65X2 IXTH48N65X2 IXYS IXTH48N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
товар відсутній
IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
товар відсутній
IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
IXFT60N65X2HV IXFT60N65X2HV IXYS IXFT60N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+827.87 грн
2+ 566.7 грн
4+ 535.56 грн
IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
1+475.41 грн
3+ 316.91 грн
8+ 299.61 грн
IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
1+856.19 грн
2+ 595.76 грн
3+ 595.06 грн
4+ 563.24 грн
IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
товар відсутній
IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
товар відсутній
IXXK160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
товар відсутній
IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
товар відсутній
IXXX160N65C4 IXYS littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
товар відсутній
DSEC16-06A DSEC16-06A IXYS media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 50A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
3+137.7 грн
8+ 112.09 грн
10+ 111.4 грн
20+ 105.87 грн
Мінімальне замовлення: 3
DSEC16-06AC DSEC16-06AC IXYS media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 50A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
2+247.39 грн
3+ 206.2 грн
5+ 163.99 грн
14+ 154.99 грн
Мінімальне замовлення: 2
MCMA700PD1600CB IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.11V
Load current: 700A
Semiconductor structure: double series
Max. forward impulse current: 19kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MDMA60UC1600VC IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; V1-B-Pack; Ifsm: 350A; bulk
Max. forward impulse current: 350A
Case: V1-B-Pack
Max. off-state voltage: 1.6kV
Kind of package: bulk
Load current: 60A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: diode-thyristor
Topology: three-phase diode bridge; thyristor
товар відсутній
IXYP8N90C3 IXYP8N90C3 IXYS IXYP(y)8N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
товар відсутній
IXYP8N90C3D1 IXYP8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
на замовлення 156 шт:
термін постачання 21-30 дні (днів)
2+294.34 грн
3+ 245.64 грн
5+ 186.13 грн
12+ 175.75 грн
Мінімальне замовлення: 2
IXTA160N04T2 IXTA160N04T2 IXYS IXTA(P)160N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+224.29 грн
3+ 187.51 грн
6+ 149.46 грн
15+ 141.15 грн
Мінімальне замовлення: 2
IXTN660N04T4 IXTN660N04T4 IXYS IXTN660N04T4.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+1649.04 грн
2+ 1448.22 грн
IXTP160N04T2 IXTP160N04T2 IXYS IXTA(P)160N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товар відсутній
IXFA7N100P IXFA7N100P IXYS IXF_7N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
2+371.84 грн
3+ 310.68 грн
4+ 247.71 грн
9+ 233.87 грн
Мінімальне замовлення: 2
IXFH7N100P IXFH7N100P IXYS IXF_7N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXFP7N100P IXFP7N100P IXYS IXF_7N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXFN50N120SIC IXFN50N120SIC IXYS IXFN50N120SiC-DTE.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.1µC
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 26ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+4836.1 грн
MCB20P1200LB-TRR IXYS MCB20P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
товар відсутній
MCB20P1200LB-TUB MCB20P1200LB-TUB IXYS MCB20P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: tube
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
товар відсутній
MCB30P1200LB-TRR IXYS MCB30P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
MCB30P1200LB-TUB IXYS MCB30P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
IXYH40N90C3D1 IXYH40N90C3D1 IXYS IXYH40N90C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
1+649.78 грн
2+ 435.23 грн
3+ 434.54 грн
6+ 411.01 грн
IXFH12N100P IXFH12N100P IXYS IXFH12N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXTH12N100L IXTH12N100L IXYS IXTH12N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN62N80Q3 IXFN62N80Q3.pdf
IXFN62N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
On-state resistance: 0.14Ω
Drain current: 49A
Drain-source voltage: 800V
Power dissipation: 960W
Reverse recovery time: 300ns
Polarisation: unipolar
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 180A
товар відсутній
IXKN45N80C IXKN45N80C.pdf
IXKN45N80C
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 800ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXTP1N80P IXTA(P,U,Y)1N80P.pdf
IXTP1N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 14Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
IXTY1N80P IXTA(P,U,Y)1N80P.pdf
IXTY1N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 42W
Case: TO252
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
товар відсутній
IXTA60N10T IXTA(P)60N10T.pdf
IXTA60N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
товар відсутній
IXTP60N10T IXTA(P)60N10T.pdf
IXTP60N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+130.4 грн
4+ 109.33 грн
10+ 87.18 грн
26+ 82.34 грн
Мінімальне замовлення: 3
IXFK360N10T IXFK(X)360N10T.pdf
IXFK360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Semiconductor structure: single transistor
Reverse recovery time: 130ns
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.6mΩ
Power dissipation: 830W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Case: SOT227B
товар відсутній
IXFX360N10T IXFK(X)360N10T.pdf
IXFX360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+906.12 грн
2+ 600.6 грн
4+ 568.08 грн
IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 60ns
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+260.81 грн
3+ 217.27 грн
5+ 172.98 грн
13+ 163.3 грн
Мінімальне замовлення: 2
IXTA3N100D2 IXTA(P)3N100D2.pdf
IXTA3N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
IXTA3N100D2HV IXTA3N100D2HV.pdf
IXTA3N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
товар відсутній
IXFA4N100P IXFA(P)4N100P.pdf
IXFA4N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 150W
Case: TO263
Mounting: SMD
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFA4N100Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf
IXFA4N100Q
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 150W
Case: TO263AA
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
IXFP4N100PM IXFP4N100PM.pdf
IXFP4N100PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXTH4N100L IXTH4N100L.pdf
IXTH4N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Power dissipation: 290W
Case: TO247-3
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.1µs
товар відсутній
IXFK24N100Q3 IXFK(X)24N100Q3.pdf
IXFK24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: TO264
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFN24N100 description IXFN24N100-DTE.pdf
IXFN24N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN44N100P IXFN44N100P.pdf
IXFN44N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+3727.3 грн
IXFR24N100Q3 IXFR24N100Q3.pdf
IXFR24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 490mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1655 грн
2+ 1453.06 грн
IXFX24N100Q3 IXFK(X)24N100Q3.pdf
IXFX24N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTX24N100 IXTX24N100.pdf
IXTX24N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
IXTA1R4N100P IXTA(P,Y)1R4N100P.pdf
IXTA1R4N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
IXTP1R4N100P IXTA(P,Y)1R4N100P.pdf
IXTP1R4N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: THT
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
IXTY1R4N100P IXTA(P,Y)1R4N100P.pdf
IXTY1R4N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
товар відсутній
DSA1-12D DSA1-18D.pdf
DSA1-12D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Kind of package: tube
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.34V
Load current: 2.3A
Semiconductor structure: single diode
Max. forward impulse current: 110A
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+315.2 грн
4+ 209.66 грн
11+ 197.89 грн
Мінімальне замовлення: 2
IXTH48N65X2 IXTH48N65X2.pdf
IXTH48N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
товар відсутній
IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
товар відсутній
IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
IXFT60N65X2HV IXFT60N65X2HV.pdf
IXFT60N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+827.87 грн
2+ 566.7 грн
4+ 535.56 грн
IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+475.41 грн
3+ 316.91 грн
8+ 299.61 грн
IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+856.19 грн
2+ 595.76 грн
3+ 595.06 грн
4+ 563.24 грн
IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
товар відсутній
IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
товар відсутній
IXXK160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
товар відсутній
IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
товар відсутній
IXXX160N65C4 littelfuse_discrete_igbts_xpt_ixx_160n65c4_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
товар відсутній
DSEC16-06A media?resourcetype=datasheets&itemid=508d2251-0e5c-48cf-8629-cef1a4793aa5&filename=Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet
DSEC16-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 50A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+137.7 грн
8+ 112.09 грн
10+ 111.4 грн
20+ 105.87 грн
Мінімальне замовлення: 3
DSEC16-06AC media?resourcetype=datasheets&itemid=727180e8-2052-4708-a088-44156766e2f7&filename=Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet
DSEC16-06AC
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 50A
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+247.39 грн
3+ 206.2 грн
5+ 163.99 грн
14+ 154.99 грн
Мінімальне замовлення: 2
MCMA700PD1600CB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.11V
Load current: 700A
Semiconductor structure: double series
Max. forward impulse current: 19kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MDMA60UC1600VC
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; V1-B-Pack; Ifsm: 350A; bulk
Max. forward impulse current: 350A
Case: V1-B-Pack
Max. off-state voltage: 1.6kV
Kind of package: bulk
Load current: 60A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: diode-thyristor
Topology: three-phase diode bridge; thyristor
товар відсутній
IXYP8N90C3 IXYP(y)8N90C3.pdf
IXYP8N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
товар відсутній
IXYP8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYP8N90C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
на замовлення 156 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+294.34 грн
3+ 245.64 грн
5+ 186.13 грн
12+ 175.75 грн
Мінімальне замовлення: 2
IXTA160N04T2 IXTA(P)160N04T2.pdf
IXTA160N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+224.29 грн
3+ 187.51 грн
6+ 149.46 грн
15+ 141.15 грн
Мінімальне замовлення: 2
IXTN660N04T4 IXTN660N04T4.pdf
IXTN660N04T4
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1649.04 грн
2+ 1448.22 грн
IXTP160N04T2 IXTA(P)160N04T2.pdf
IXTP160N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товар відсутній
IXFA7N100P IXF_7N100P.pdf
IXFA7N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+371.84 грн
3+ 310.68 грн
4+ 247.71 грн
9+ 233.87 грн
Мінімальне замовлення: 2
IXFH7N100P IXF_7N100P.pdf
IXFH7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXFP7N100P IXF_7N100P.pdf
IXFP7N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXFN50N120SIC IXFN50N120SiC-DTE.pdf
IXFN50N120SIC
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.1µC
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 26ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+4836.1 грн
MCB20P1200LB-TRR MCB20P1200LB.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
товар відсутній
MCB20P1200LB-TUB MCB20P1200LB.pdf
MCB20P1200LB-TUB
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: tube
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
товар відсутній
MCB30P1200LB-TRR MCB30P1200LB.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
MCB30P1200LB-TUB MCB30P1200LB.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
IXYH40N90C3D1 IXYH40N90C3D1.pdf
IXYH40N90C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+649.78 грн
2+ 435.23 грн
3+ 434.54 грн
6+ 411.01 грн
IXFH12N100P IXFH12N100P.pdf
IXFH12N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
IXTH12N100L IXTH12N100L.pdf
IXTH12N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
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