| Фото | Назва | Виробник | Інформація |
Доступність |
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IXFN420N10T | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Pulsed drain current: 1kA Power dissipation: 1.07kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.3mΩ Gate charge: 670nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 140ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTA260N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Drain current: 260A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.14µC Kind of channel: enhanced Reverse recovery time: 60ns Drain-source voltage: 55V |
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IXTA260N055T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263-7 Drain current: 260A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.14µC Kind of channel: enhanced Reverse recovery time: 60ns Drain-source voltage: 55V |
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IXTH260N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Drain current: 260A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.14µC Kind of channel: enhanced Reverse recovery time: 60ns Drain-source voltage: 55V |
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| DMA10IM1600UZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A Power dissipation: 100W Case: TO252AA Mounting: SMD Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.6kV Max. forward impulse current: 100A Type of diode: rectifying Max. forward voltage: 1.21V Load current: 10A |
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| DMA10P1600UZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 10A; TO252AA; Ufmax: 1.27V; Ifsm: 85A Mounting: SMD Power dissipation: 75W Kind of package: tube Type of diode: rectifying Case: TO252AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.27V Load current: 10A Semiconductor structure: double series Max. forward impulse current: 85A |
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VUO52-22NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 60A; Ifsm: 350A Type of bridge rectifier: three-phase Max. off-state voltage: 2.2kV Load current: 60A Max. forward impulse current: 350A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.13V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw |
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MEE250-12DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Case: Y4-M6 Max. forward voltage: 1.54V Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Semiconductor structure: double series Max. forward impulse current: 2.4kA Load current: 260A |
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| DLA5P800UC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 5A; DPAK; Ufmax: 1.12V; Ifsm: 70A; 60W Power dissipation: 60W Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series Max. off-state voltage: 0.8kV Type of diode: rectifying Max. forward impulse current: 70A Max. forward voltage: 1.12V Load current: 5A |
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CPC3701CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.6A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of channel: depleted Gate-source voltage: ±15V Mounting: SMD Case: SOT89 |
на замовлення 606 шт: термін постачання 21-30 дні (днів) |
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IXYA20N65B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 230W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 108A Mounting: SMD Gate charge: 29nC Kind of package: tube Turn-on time: 39ns Turn-off time: 271ns |
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| MMIX1X340N65B4 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Kind of package: tube Power dissipation: 1.2kW Collector-emitter voltage: 650V Gate charge: 553nC Pulsed collector current: 1.2kA Type of transistor: IGBT Turn-on time: 119ns Turn-off time: 346ns Gate-emitter voltage: ±20V Collector current: 295A |
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IX4310NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 5...24V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
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| MMIX1X200N60B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 120A |
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| MMIX1X200N60B3H1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD Pulsed collector current: 1kA Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 520W Kind of package: tube Gate charge: 315nC Technology: BiMOSFET™; GenX3™; XPT™ Mounting: SMD Case: SMPD Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A |
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IXFN102N30P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 86A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 33mΩ Pulsed drain current: 250A Power dissipation: 570W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 224nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN110N85X | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 110A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 33mΩ Pulsed drain current: 220A Power dissipation: 1170W Technology: HiPerFET™; X-Class Kind of channel: enhanced Gate charge: 425nC Reverse recovery time: 205ns Gate-source voltage: ±40V Mechanical mounting: screw |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXFN130N90SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 10mΩ Technology: SiC Kind of channel: enhanced Gate charge: 68nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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IXFN140N25T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 120A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 17mΩ Pulsed drain current: 400A Power dissipation: 690W Technology: GigaMOS™; HiPerFET™ Kind of channel: enhanced Gate charge: 255nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN140N30P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 110A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 24mΩ Pulsed drain current: 300A Power dissipation: 700W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 185nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN150N65X2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 145A Pulsed drain current: 300A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 17mΩ Gate charge: 355nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 190ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN160N30T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 19mΩ Pulsed drain current: 444A Power dissipation: 900W Technology: GigaMOS™ Kind of channel: enhanced Gate charge: 376nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN170N25X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 146A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 400A Power dissipation: 390W Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate charge: 0.19µC Reverse recovery time: 135ns Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXFN170N30P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 138A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 18mΩ Pulsed drain current: 500A Power dissipation: 890W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 258nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN180N15P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A Technology: HiPerFET™; PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Pulsed drain current: 380A Power dissipation: 680W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 11mΩ Gate charge: 240nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXFN180N25T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 168A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 12.9mΩ Pulsed drain current: 500A Power dissipation: 900W Technology: GigaMOS™ Kind of channel: enhanced Gate charge: 364nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| VUE130-06NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 600V; If: 130A; Ifsm: 600A Type of bridge rectifier: three-phase Max. off-state voltage: 600V Load current: 130A Max. forward impulse current: 600A Electrical mounting: THT Version: module Max. forward voltage: 2.04V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw Technology: FRED |
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| VUE130-12NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 130A; Ifsm: 500A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 130A Max. forward impulse current: 500A Electrical mounting: THT Version: module Max. forward voltage: 2.07V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw Technology: FRED |
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CS30-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.2kV Max. load current: 47A Load current: 30A Gate current: 55mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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CS30-14IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.4kV Max. load current: 47A Load current: 30A Gate current: 55mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 277 шт: термін постачання 21-30 дні (днів) |
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CS30-16IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Mounting: THT Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.6kV Max. load current: 47A Load current: 30A Gate current: 55mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 295 шт: термін постачання 21-30 дні (днів) |
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| DCG20B650LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; SiC Type of bridge rectifier: single-phase Max. off-state voltage: 650V Load current: 16A Case: SMPD-B Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 2V Features of semiconductor devices: Schottky Technology: SiC |
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| DCG20B650LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube Type of bridge rectifier: single-phase Max. off-state voltage: 650V Load current: 16A Case: SMPD-B Electrical mounting: SMT Kind of package: tube Max. forward voltage: 2V Features of semiconductor devices: Schottky Technology: SiC |
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| DMA120B800LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape Max. off-state voltage: 0.8kV Case: SMPD-B Kind of package: reel; tape Load current: 130A Electrical mounting: SMT Type of bridge rectifier: single-phase |
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| DMA120B800LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube Max. off-state voltage: 0.8kV Case: SMPD-B Kind of package: tube Load current: 130A Electrical mounting: SMT Type of bridge rectifier: single-phase |
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| DLA100B800LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A Kind of package: reel; tape Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 0.8kV Max. forward voltage: 1.44V |
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| DLA100B800LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A Kind of package: tube Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 0.8kV Max. forward voltage: 1.44V |
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| DPG60B600LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Case: SMPD-B Kind of package: reel; tape Max. off-state voltage: 600V Electrical mounting: SMT Type of bridge rectifier: single-phase Max. forward impulse current: 250A Max. forward voltage: 2.21V Load current: 60A |
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| DPG60B600LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A Technology: HiPerFRED™ Case: SMPD-B Kind of package: tube Max. off-state voltage: 600V Electrical mounting: SMT Type of bridge rectifier: single-phase Max. forward impulse current: 250A Max. forward voltage: 2.21V Load current: 60A |
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| DLA100B1200LB-TRR | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A Kind of package: reel; tape Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V |
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DLA100B1200LB-TUB | IXYS |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A Kind of package: tube Load current: 124A Max. forward impulse current: 0.4kA Electrical mounting: SMT Type of bridge rectifier: single-phase Case: SMPD-B Max. off-state voltage: 1.2kV Max. forward voltage: 1.23V |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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| DHG60U1200LB-TRR | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 60A Max. forward impulse current: 200A Electrical mounting: SMT Case: SMPD-B Kind of package: reel; tape Max. forward voltage: 3.15V Technology: Sonic FRD™ |
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| DHG60U1200LB-TUB | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 60A Max. forward impulse current: 200A Electrical mounting: SMT Case: SMPD-B Kind of package: tube Max. forward voltage: 3.15V Technology: Sonic FRD™ |
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LDA200S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA200STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA201S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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LDA201STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA202S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A CTR@If: 33-1000%@1mA |
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LDA202STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Number of channels: 2 Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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LDA203S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Trigger current: 1A CTR@If: 33-1000%@1mA |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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LDA203STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Insulation voltage: 3.75kV Type of optocoupler: optocoupler Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Trigger current: 1A CTR@If: 33-1000%@1mA |
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IXTH500N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 84ns Drain-source voltage: 40V Drain current: 500A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 1kW Polarisation: unipolar Gate charge: 405nC Kind of channel: enhanced |
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IXFB150N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 150A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 17mΩ Mounting: THT Gate charge: 355nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 260ns |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IXTP80N12T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 80A Power dissipation: 325W Case: TO220AB On-state resistance: 17mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 90ns |
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IXTA110N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
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IXTP110N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO220AB On-state resistance: 6.6mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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IXTK102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ |
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| VVZB135-16IOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Application: Inverter Case: E2-Pack Power dissipation: 390W Technology: X2PT Pulsed collector current: 225A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V Collector current: 84A Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor |
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IXTH02N250 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 1.5µs Drain-source voltage: 2.5kV Drain current: 0.2A On-state resistance: 450Ω |
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IXTH02N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us Case: TO247HV Mounting: THT Kind of package: tube Drain current: 0.2A Power dissipation: 113W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 625Ω |
товар відсутній |
| IXFN420N10T |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTA260N055T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
товар відсутній
| IXTA260N055T2-7 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263-7
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263-7
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
товар відсутній
| IXTH260N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
товар відсутній
| DMA10IM1600UZ-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A
Power dissipation: 100W
Case: TO252AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Max. forward impulse current: 100A
Type of diode: rectifying
Max. forward voltage: 1.21V
Load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A
Power dissipation: 100W
Case: TO252AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Max. forward impulse current: 100A
Type of diode: rectifying
Max. forward voltage: 1.21V
Load current: 10A
товар відсутній
| DMA10P1600UZ-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO252AA; Ufmax: 1.27V; Ifsm: 85A
Mounting: SMD
Power dissipation: 75W
Kind of package: tube
Type of diode: rectifying
Case: TO252AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 85A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO252AA; Ufmax: 1.27V; Ifsm: 85A
Mounting: SMD
Power dissipation: 75W
Kind of package: tube
Type of diode: rectifying
Case: TO252AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 85A
товар відсутній
| VUO52-22NO1 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.13V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.13V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
товар відсутній
| MEE250-12DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. forward voltage: 1.54V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Load current: 260A
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. forward voltage: 1.54V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Load current: 260A
товар відсутній
| DLA5P800UC-TRL |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 5A; DPAK; Ufmax: 1.12V; Ifsm: 70A; 60W
Power dissipation: 60W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Type of diode: rectifying
Max. forward impulse current: 70A
Max. forward voltage: 1.12V
Load current: 5A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 5A; DPAK; Ufmax: 1.12V; Ifsm: 70A; 60W
Power dissipation: 60W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Type of diode: rectifying
Max. forward impulse current: 70A
Max. forward voltage: 1.12V
Load current: 5A
товар відсутній
| CPC3701CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.6A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±15V
Mounting: SMD
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.6A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±15V
Mounting: SMD
Case: SOT89
на замовлення 606 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.55 грн |
| 12+ | 32.35 грн |
| 25+ | 28.54 грн |
| 33+ | 25.59 грн |
| 91+ | 24.23 грн |
| 500+ | 23.94 грн |
| IXYA20N65B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
товар відсутній
| MMIX1X340N65B4 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Kind of package: tube
Power dissipation: 1.2kW
Collector-emitter voltage: 650V
Gate charge: 553nC
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Kind of package: tube
Power dissipation: 1.2kW
Collector-emitter voltage: 650V
Gate charge: 553nC
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
товар відсутній
| IX4310NTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
| MMIX1X200N60B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 120A
товар відсутній
| MMIX1X200N60B3H1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 520W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Pulsed collector current: 1kA
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 520W
Kind of package: tube
Gate charge: 315nC
Technology: BiMOSFET™; GenX3™; XPT™
Mounting: SMD
Case: SMPD
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 72A
товар відсутній
| IXFN102N30P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 86A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 250A
Power dissipation: 570W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 224nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 86A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 250A
Power dissipation: 570W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 224nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN110N85X |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Kind of channel: enhanced
Gate charge: 425nC
Reverse recovery time: 205ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Kind of channel: enhanced
Gate charge: 425nC
Reverse recovery time: 205ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5002.78 грн |
| IXFN130N90SK |
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXFN140N25T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 400A
Power dissipation: 690W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 400A
Power dissipation: 690W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN140N30P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 185nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 185nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN150N65X2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 145A
Pulsed drain current: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Gate charge: 355nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 145A
Pulsed drain current: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Gate charge: 355nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN160N30T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 444A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 376nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 444A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 376nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN170N25X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 146A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 400A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 135ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 146A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 400A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 135ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2004.36 грн |
| 2+ | 1759.83 грн |
| IXFN170N30P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 258nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 258nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN180N15P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Technology: HiPerFET™; PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Pulsed drain current: 380A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Technology: HiPerFET™; PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Pulsed drain current: 380A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1549.92 грн |
| 2+ | 1360.85 грн |
| IXFN180N25T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1384.24 грн |
| 2+ | 1215.64 грн |
| VUE130-06NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 130A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 600V
Load current: 130A
Max. forward impulse current: 600A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.04V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 130A; Ifsm: 600A
Type of bridge rectifier: three-phase
Max. off-state voltage: 600V
Load current: 130A
Max. forward impulse current: 600A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.04V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
товар відсутній
| VUE130-12NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 130A; Ifsm: 500A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 500A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.07V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 130A; Ifsm: 500A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 500A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.07V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
товар відсутній
| CS30-12IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 304 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 340.64 грн |
| 3+ | 279.65 грн |
| 4+ | 252.33 грн |
| 10+ | 237.95 грн |
| 30+ | 234.36 грн |
| CS30-14IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.4kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 277 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 319.74 грн |
| 3+ | 262.39 грн |
| 4+ | 246.58 грн |
| 10+ | 232.92 грн |
| 30+ | 224.29 грн |
| CS30-16IO1 | |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Mounting: THT
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 366.96 грн |
| 3+ | 301.21 грн |
| 4+ | 271.74 грн |
| 9+ | 256.64 грн |
| 30+ | 253.05 грн |
| DCG20B650LB-TRR |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; SiC
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| DCG20B650LB-TUB |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| DMA120B800LB-TRR |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Max. off-state voltage: 0.8kV
Case: SMPD-B
Kind of package: reel; tape
Load current: 130A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Max. off-state voltage: 0.8kV
Case: SMPD-B
Kind of package: reel; tape
Load current: 130A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
товар відсутній
| DMA120B800LB-TUB |
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Max. off-state voltage: 0.8kV
Case: SMPD-B
Kind of package: tube
Load current: 130A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Max. off-state voltage: 0.8kV
Case: SMPD-B
Kind of package: tube
Load current: 130A
Electrical mounting: SMT
Type of bridge rectifier: single-phase
товар відсутній
| DLA100B800LB-TRR |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
товар відсутній
| DLA100B800LB-TUB |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.44V
товар відсутній
| DPG60B600LB-TRR |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
товар відсутній
| DPG60B600LB-TUB |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Max. off-state voltage: 600V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
Max. forward voltage: 2.21V
Load current: 60A
товар відсутній
| DLA100B1200LB-TRR |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: reel; tape
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
товар відсутній
| DLA100B1200LB-TUB |
|
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 124A; Ifsm: 400A
Kind of package: tube
Load current: 124A
Max. forward impulse current: 0.4kA
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Case: SMPD-B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.23V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1223.21 грн |
| 3+ | 1074.02 грн |
| 20+ | 1058.92 грн |
| DHG60U1200LB-TRR |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: reel; tape
Max. forward voltage: 3.15V
Technology: Sonic FRD™
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: reel; tape
Max. forward voltage: 3.15V
Technology: Sonic FRD™
товар відсутній
| DHG60U1200LB-TUB |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Technology: Sonic FRD™
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Case: SMPD-B
Kind of package: tube
Max. forward voltage: 3.15V
Technology: Sonic FRD™
товар відсутній
| LDA200S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA200STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA201S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.32 грн |
| 5+ | 93.46 грн |
| 17+ | 49.6 грн |
| 45+ | 46.73 грн |
| LDA201STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA202S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| LDA202STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| LDA203S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.32 грн |
| 5+ | 92.02 грн |
| 18+ | 48.17 грн |
| 47+ | 46.01 грн |
| LDA203STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
товар відсутній
| IXTH500N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
Drain-source voltage: 40V
Drain current: 500A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 405nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
Drain-source voltage: 40V
Drain current: 500A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 405nC
Kind of channel: enhanced
товар відсутній
| IXFB150N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1879.72 грн |
| 2+ | 1650.56 грн |
| IXTP80N12T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
товар відсутній
| IXTA110N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
товар відсутній
| IXTP110N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.93 грн |
| 9+ | 97.77 грн |
| 24+ | 92.74 грн |
| IXTK102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
| VVZB135-16IOXT |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
товар відсутній
| IXTH02N250 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
товар відсутній
| IXTH02N450HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
товар відсутній