| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PLA192S | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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| PLA192STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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PAA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT Mounting: THT Case: DIP8 Operating temperature: -40...85°C Max. operating current: 150mA Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Turn-on time: 1ms Turn-off time: 250µs Control current max.: 50mA Switched voltage: max. 400V AC; max. 400V DC Contacts configuration: SPST-NO x2 Type of relay: solid state Relay variant: 1-phase; current source On-state resistance: 22Ω Insulation voltage: 3.75kV Kind of output: MOSFET |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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PAA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT Mounting: THT Case: DIP8 Operating temperature: -40...85°C Max. operating current: 150mA Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Turn-on time: 1ms Turn-off time: 250µs Control current max.: 50mA Switched voltage: max. 400V AC; max. 400V DC Contacts configuration: SPST-NO x2 Type of relay: solid state Relay variant: 1-phase; current source On-state resistance: 22Ω Insulation voltage: 3.75kV Kind of output: MOSFET |
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PAA110LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Max. operating current: 150mA Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Turn-on time: 1ms Turn-off time: 250µs Control current max.: 50mA Switched voltage: max. 400V AC; max. 400V DC Contacts configuration: SPST-NO x2 Type of relay: solid state Relay variant: 1-phase; current source On-state resistance: 22Ω Insulation voltage: 3.75kV Kind of output: MOSFET |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
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| PAA110LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 250µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
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PAA110P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 250µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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PAA110PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 250µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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| PAA110PLTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 250µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
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PAA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 250µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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| PAA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 250µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
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| PAA190 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: THT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 500µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
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PAA190S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 500µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| PAA190STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source Mounting: SMT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 500µs Manufacturer series: OptoMOS Max. operating current: 150mA Control current max.: 50mA On-state resistance: 22Ω Kind of output: MOSFET |
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IXFA14N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO263 On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
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IXFH14N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO247-3 On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
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IXFH34N60X2A | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W On-state resistance: 0.1Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 56nC Technology: HiPerFET™; X2-Class Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Mounting: THT Case: TO247-3 Reverse recovery time: 164ns Drain-source voltage: 600V Drain current: 34A |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXFK64N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264 Kind of package: tube Drain-source voltage: 600V Drain current: 64A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Mounting: THT Case: TO264 |
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IXFK64N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1.13kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXFK64N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1.25kW Case: TO264 On-state resistance: 95mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXFN64N60P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 150A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 96mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXFP14N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO220AB On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFR44N60 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 417W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 417W Case: ISOPLUS247™ On-state resistance: 130mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhanced |
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IXFR64N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 105mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IXFR64N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 568W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Power dissipation: 568W Case: ISOPLUS247™ On-state resistance: 104mΩ Mounting: THT Gate charge: 190nC Kind of package: tube Kind of channel: enhanced |
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IXFX44N60 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 44A Power dissipation: 568W Case: PLUS247™ On-state resistance: 130mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhanced |
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IXFX64N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 96mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IXFX64N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced |
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IXFX64N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1250W Case: PLUS247™ On-state resistance: 95mΩ Mounting: THT Gate charge: 190nC Kind of package: tube Kind of channel: enhanced |
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IXTA14N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO263 On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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IXTP14N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO220AB On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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IXTP14N60PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 75W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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IXTP14N60X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 18A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 16.7nC Kind of package: tube Kind of channel: enhanced |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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IXTQ14N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO3P On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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IXTY14N60X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 18A Power dissipation: 180W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 16.7nC Kind of package: tube Kind of channel: enhanced |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IXXH30N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247AD Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 23ns Turn-off time: 125ns |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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IXXN110N65B4H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Collector current: 110A Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 650A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXXN110N65C4H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX3™; XPT™ Collector current: 110A Power dissipation: 750W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 470A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXXR110N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 70A Power dissipation: 455W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns |
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IXXX110N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns |
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IXTH30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.24Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
на замовлення 270 шт: термін постачання 21-30 дні (днів) |
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IXTQ30N60L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO3P On-state resistance: 0.24Ω Mounting: THT Gate charge: 335nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 710ns |
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IXTQ30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO3P On-state resistance: 0.24Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IXTT30N60L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268 Type of transistor: N-MOSFET Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO268 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 335nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 710ns |
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IXTT30N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO268 On-state resistance: 0.24Ω Mounting: SMD Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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IXXH30N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 110A Mounting: THT Gate charge: 37nC Kind of package: tube Turn-on time: 37ns Turn-off time: 166ns |
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IXXQ30N60B3M | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 90W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 57ns Turn-off time: 292ns |
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IXFX55N50 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 55A Power dissipation: 520W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXTA15N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 300W Case: TO263 On-state resistance: 0.48Ω Mounting: SMD Gate charge: 123nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 570ns |
товар відсутній |
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IXTH15N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 300W Case: TO247-3 On-state resistance: 0.48Ω Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 570ns |
товар відсутній |
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IXTP15N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 300W Case: TO220AB On-state resistance: 0.48Ω Mounting: THT Gate charge: 123nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 570ns |
товар відсутній |
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IX4426MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 4.5...30V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting |
на замовлення 1241 шт: термін постачання 21-30 дні (днів) |
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IX4428MTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...30V Mounting: SMD Operating temperature: -40...125°C Number of channels: 2 Kind of output: inverting; non-inverting Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Case: DFN8 Output current: -1.5...1.5A Type of integrated circuit: driver |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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IXDD604D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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IXDD609D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXDF602D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Mounting: SMD Case: DFN8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Turn-on time: 135ns Turn-off time: 135ns Output current: -2...2A Type of integrated circuit: driver Number of channels: 2 |
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IXDI602D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Mounting: SMD Case: DFN8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Turn-on time: 81ns Turn-off time: 79ns Output current: -2...2A Type of integrated circuit: driver Number of channels: 2 |
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IXFB100N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 100A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
товар відсутній |
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IXFB100N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Drain-source voltage: 500V Drain current: 100A Case: PLUS264™ Mounting: THT Polarisation: unipolar On-state resistance: 49mΩ Power dissipation: 1.56kW Kind of channel: enhanced Gate charge: 255nC Kind of package: tube Type of transistor: N-MOSFET |
товар відсутній |
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IXFH100N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Technology: HiPerFET™; Polar™ Mounting: THT Case: TO247-3 Kind of package: tube Power dissipation: 600W Polarisation: unipolar Gate charge: 185nC Kind of channel: enhanced Drain-source voltage: 250V Drain current: 100A On-state resistance: 27mΩ Type of transistor: N-MOSFET |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| PLA192S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| PLA192STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| PAA110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 744.59 грн |
| 3+ | 314.85 грн |
| 7+ | 297.32 грн |
| PAA110L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
товар відсутній
| PAA110LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 171 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 759.69 грн |
| 3+ | 321.16 грн |
| 7+ | 303.63 грн |
| PAA110LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
товар відсутній
| PAA110P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 746.86 грн |
| 3+ | 315.55 грн |
| 7+ | 298.02 грн |
| PAA110PL |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 759.69 грн |
| 3+ | 321.16 грн |
| 7+ | 303.63 грн |
| PAA110PLTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
товар відсутній
| PAA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 746.86 грн |
| 3+ | 315.55 грн |
| 7+ | 298.02 грн |
| PAA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 250µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
товар відсутній
| PAA190 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 500µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 500µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
товар відсутній
| PAA190S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 500µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 500µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 724.96 грн |
| 3+ | 306.43 грн |
| 7+ | 289.61 грн |
| PAA190STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 500µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 500µs
Manufacturer series: OptoMOS
Max. operating current: 150mA
Control current max.: 50mA
On-state resistance: 22Ω
Kind of output: MOSFET
товар відсутній
| IXFA14N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH14N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH34N60X2A |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 476.51 грн |
| 3+ | 393.39 грн |
| 6+ | 372.35 грн |
| 10+ | 370.95 грн |
| IXFK64N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Kind of package: tube
Drain-source voltage: 600V
Drain current: 64A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Kind of package: tube
Drain-source voltage: 600V
Drain current: 64A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
товар відсутній
| IXFK64N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 953.77 грн |
| 2+ | 636.71 грн |
| 4+ | 602.35 грн |
| IXFK64N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1999.67 грн |
| 2+ | 1755.86 грн |
| IXFN64N60P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2028.37 грн |
| 2+ | 1780.4 грн |
| IXFP14N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 377.58 грн |
| IXFR44N60 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 130mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 130mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR64N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 105mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 105mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR64N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 568W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 568W
Case: ISOPLUS247™
On-state resistance: 104mΩ
Mounting: THT
Gate charge: 190nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 568W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 568W
Case: ISOPLUS247™
On-state resistance: 104mΩ
Mounting: THT
Gate charge: 190nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX44N60 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 44A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 130mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 44A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 130mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX64N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX64N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX64N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1250W
Case: PLUS247™
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 190nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1250W
Case: PLUS247™
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 190nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTA14N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTP14N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTP14N60PM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTP14N60X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 293.76 грн |
| 3+ | 246.13 грн |
| 5+ | 195.64 грн |
| 12+ | 184.42 грн |
| IXTQ14N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTY14N60X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 18A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.1 грн |
| 5+ | 180.21 грн |
| 13+ | 170.4 грн |
| IXXH30N60B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 545.23 грн |
| 3+ | 375.15 грн |
| 7+ | 354.82 грн |
| IXXN110N65B4H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXXN110N65C4H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Collector current: 110A
Power dissipation: 750W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXXR110N65B4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 70A
Power dissipation: 455W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
товар відсутній
| IXXX110N65B4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 880W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 250ns
товар відсутній
| IXTH30N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
на замовлення 270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 632.83 грн |
| 2+ | 429.85 грн |
| 3+ | 429.15 грн |
| 6+ | 406.01 грн |
| IXTQ30N60L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
товар відсутній
| IXTQ30N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 602.62 грн |
| 3+ | 401.1 грн |
| 6+ | 379.36 грн |
| IXTT30N60L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 710ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 710ns
товар відсутній
| IXTT30N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXXH30N60C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 166ns
товар відсутній
| IXXQ30N60B3M |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 90W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 292ns
товар відсутній
| IXFX55N50 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXTA15N50L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
товар відсутній
| IXTH15N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
товар відсутній
| IXTP15N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
товар відсутній
| IX4426MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
на замовлення 1241 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.61 грн |
| 7+ | 55.19 грн |
| 20+ | 41.16 грн |
| 25+ | 41.09 грн |
| 55+ | 38.85 грн |
| IX4428MTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 2
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Type of integrated circuit: driver
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.72 грн |
| 8+ | 47.26 грн |
| 23+ | 37.16 грн |
| IXDD604D2TR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.17 грн |
| 5+ | 82.04 грн |
| 12+ | 73.63 грн |
| 25+ | 72.93 грн |
| 31+ | 69.42 грн |
| 100+ | 68.02 грн |
| IXDD609D2TR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.42 грн |
| 5+ | 79.24 грн |
| 12+ | 70.82 грн |
| 32+ | 67.32 грн |
| IXDF602D2TR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Turn-on time: 135ns
Turn-off time: 135ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
| IXDI602D2TR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
| IXFB100N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 100A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 100A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFB100N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1.56kW
Kind of channel: enhanced
Gate charge: 255nC
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Drain-source voltage: 500V
Drain current: 100A
Case: PLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 49mΩ
Power dissipation: 1.56kW
Kind of channel: enhanced
Gate charge: 255nC
Kind of package: tube
Type of transistor: N-MOSFET
товар відсутній
| IXFH100N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 185nC
Kind of channel: enhanced
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Technology: HiPerFET™; Polar™
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 185nC
Kind of channel: enhanced
Drain-source voltage: 250V
Drain current: 100A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 832.19 грн |