| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MCC162-16io1 | IXYS |
 Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Max. forward impulse current: 6.48kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
|||||||||||
| MCC162-16IO1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.25V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
 |
IXTA1N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Power dissipation: 63W Case: TO263 On-state resistance: 20Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
товар відсутній |
|||||||||||
 |
IXTP1N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Power dissipation: 63W Case: TO220AB On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
товар відсутній |
|||||||||||
 |
IXTY1N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Power dissipation: 63W Case: TO252 On-state resistance: 20Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXTP02N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.2A Power dissipation: 33W Case: TO220AB On-state resistance: 75Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs |
товар відсутній |
|||||||||||
|
|
IXTY02N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.2A Power dissipation: 33W Case: TO252 On-state resistance: 75Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs |
товар відсутній |
|||||||||||
|
|
IXTA3N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO263 On-state resistance: 1.5Ω Mounting: SMD Gate charge: 1.07µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 24ns |
товар відсутній |
|||||||||||
|
|
IXFA30N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns |
товар відсутній |
|||||||||||
|
|
IXFA36N30P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 347W Case: TO263 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 125ns |
товар відсутній |
|||||||||||
|
|
IXFA60N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO263 On-state resistance: 23mΩ Mounting: SMD Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXFA76N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns Reverse recovery time: 69ns Drain-source voltage: 150V Drain current: 76A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 350W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 97nC Kind of channel: enhanced Mounting: SMD Case: TO263 |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXFA80N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 80A Power dissipation: 390W Case: TO263 On-state resistance: 16mΩ Mounting: SMD Gate charge: 83nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 120ns |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXTA32N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 32A Power dissipation: 200W Case: TO263 On-state resistance: 78mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 110ns |
товар відсутній |
|||||||||||
|
|
IXFA230N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
IXFA230N075T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263-7 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXTA120N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 250W Case: TO263 On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 50ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| VUE30-20NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw Type of bridge rectifier: three-phase Max. off-state voltage: 2kV Load current: 30A Max. forward impulse current: 75A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 5.41V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw Technology: FRED |
товар відсутній |
||||||||||||
| VUE35-06NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 56A Max. forward impulse current: 110A Electrical mounting: THT Version: module Max. forward voltage: 2.01V Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
товар відсутній |
||||||||||||
 |
FMM22-05PF | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A Mounting: THT Kind of package: tube Gate charge: 50nC Technology: PolarHV™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 55A Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 13A On-state resistance: 0.27Ω Type of transistor: N-MOSFET x2 Power dissipation: 132W Polarisation: unipolar |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXTA10P50P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -10A Power dissipation: 300W Case: TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 414ns |
на замовлення 287 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
DSEP12-12B | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 2.06V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| DSEP12-12BZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263ABHV Max. forward voltage: 2.06V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube |
товар відсутній |
||||||||||||
 |
DSB60C30HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 130W; TO247-3; tube Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.47V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Max. forward impulse current: 570A Kind of package: tube Power dissipation: 130W |
товар відсутній |
|||||||||||
|
|
DSB60C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 130W; TO247-3; tube Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward voltage: 0.58V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Max. forward impulse current: 570A Kind of package: tube Power dissipation: 130W |
на замовлення 151 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
DSB60C60HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 130W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.67V Case: TO247-3 Kind of package: tube Max. forward impulse current: 570A Power dissipation: 130W |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
LOC111 | IXYS |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: photodiode Insulation voltage: 3.75kV Case: DIP8 |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
LOC111S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
LOC111STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
товар відсутній |
|||||||||||
| LIA135 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
товар відсутній |
||||||||||||
| LIA135S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
товар відсутній |
||||||||||||
| LIA135STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
товар відсутній |
||||||||||||
| LIA136 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
товар відсутній |
||||||||||||
| LIA136S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV Type of optocoupler: optocoupler |
товар відсутній |
||||||||||||
| LIA136STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV Type of optocoupler: optocoupler |
товар відсутній |
||||||||||||
| MDMA425P1600PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA Max. off-state voltage: 1.6kV Load current: 425A Semiconductor structure: double series Max. forward impulse current: 10kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: diode Case: SimBus F |
товар відсутній |
||||||||||||
 |
IXTQ34N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF Mounting: THT Power dissipation: 40W Case: TO3PF Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Drain-source voltage: 650V Drain current: 34A On-state resistance: 96mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 54nC |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXTQ48N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Mounting: THT Power dissipation: 70W Case: TO3PF Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 650V Drain current: 48A On-state resistance: 65mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 76nC |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| DSEP29-06AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: D2PAK Max. forward voltage: 1.26V Max. forward impulse current: 250A Power dissipation: 165W Technology: HiPerFRED™ Kind of package: tube |
товар відсутній |
||||||||||||
| MWI25-12A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors Case: E2-Pack Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 35A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 225W Technology: NPT Mechanical mounting: screw Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB |
товар відсутній |
||||||||||||
|
|
IXTP01N100D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Gate charge: 0.1µC Kind of channel: depleted Mounting: THT Case: TO220AB Reverse recovery time: 2ns Drain-source voltage: 1kV Drain current: 0.1A On-state resistance: 80Ω |
на замовлення 348 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
IXTU01N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251 Mounting: THT Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO251 On-state resistance: 80Ω |
товар відсутній |
|||||||||||
|
|
IXTY01N100 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω |
товар відсутній |
|||||||||||
|
|
IXTY01N100D | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Mounting: SMD Power dissipation: 25W Gate charge: 0.1µC Polarisation: unipolar Drain current: 0.1A Kind of channel: depleted Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω Reverse recovery time: 2ns |
товар відсутній |
|||||||||||
 |
DSEP60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 1.81V Power dissipation: 330W Reverse recovery time: 40ns Technology: HiPerFRED™ |
товар відсутній |
|||||||||||
 |
DSEP60-12AR | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: ISOPLUS247™ Max. forward voltage: 2.66V Power dissipation: 230W Reverse recovery time: 40ns Technology: HiPerFRED™ |
товар відсутній |
|||||||||||
| MWI150-12T8T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Application: motors; photovoltaics Power dissipation: 690W Mechanical mounting: screw Pulsed collector current: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 150A Topology: IGBT three-phase bridge; NTC thermistor |
товар відсутній |
||||||||||||
|
|
IXTA3N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
IXTY3N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 9.3nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
LBA120P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| LBA120PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
||||||||||||
|
|
IXTP6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 6A Power dissipation: 300W Case: TO220AB On-state resistance: 2.2Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 41ns |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| CLA15E1200NPZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 15A Gate current: 20/40mA Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward impulse current: 145A Features of semiconductor devices: two gate polarities |
товар відсутній |
||||||||||||
|
|
IXFH150N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| IXFT150N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 140ns |
товар відсутній |
||||||||||||
| IXTX4N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns Mounting: THT Case: TO247PLUS-HV Power dissipation: 960W Gate charge: 139nC Polarisation: unipolar Technology: Polar3™ Features of semiconductor devices: standard power mosfet Drain current: 4A Kind of channel: enhanced Drain-source voltage: 3kV Type of transistor: N-MOSFET Kind of package: tube Reverse recovery time: 420ns |
товар відсутній |
||||||||||||
| IXBOD2-50R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5kV |
товар відсутній |
||||||||||||
 |
IXTR140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns Mounting: THT Case: ISOPLUS247™ Reverse recovery time: 130ns Drain-source voltage: -100V Drain current: -110A On-state resistance: 11mΩ Type of transistor: P-MOSFET Power dissipation: 270W Polarisation: unipolar Kind of package: tube Gate charge: 400nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V |
товар відсутній |
|||||||||||
 |
IXBOD2-56R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5.6kV |
товар відсутній |
|||||||||||
 |
IXBOD2-14 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 1.4kV |
товар відсутній |
| MCC162-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Max. forward impulse current: 6.48kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC162-16IO1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| IXTA1N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO263
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO263
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
| IXTP1N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
| IXTY1N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO252
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
на замовлення 128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 188.9 грн |
| 5+ | 157.44 грн |
| 7+ | 132.99 грн |
| 18+ | 125.09 грн |
| IXTP02N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO220AB
On-state resistance: 75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO220AB
On-state resistance: 75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
| IXTY02N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
товар відсутній
| IXTA3N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
товар відсутній
| IXFA30N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
товар відсутній
| IXFA36N30P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO263
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 36A; 347W; TO263; 125ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 347W
Case: TO263
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 125ns
товар відсутній
| IXFA60N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO263; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO263
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 404.9 грн |
| 3+ | 337.88 грн |
| 7+ | 320.62 грн |
| 10+ | 315.59 грн |
| 50+ | 308.4 грн |
| IXFA76N15T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO263; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.93 грн |
| 3+ | 232.2 грн |
| 4+ | 221.42 грн |
| 10+ | 216.38 грн |
| 11+ | 209.2 грн |
| IXFA80N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 80A; 390W; TO263; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 80A
Power dissipation: 390W
Case: TO263
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 120ns
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 557.41 грн |
| 3+ | 391.79 грн |
| 6+ | 370.23 грн |
| IXTA32N20T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
товар відсутній
| IXFA230N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 422.7 грн |
| 3+ | 352.97 грн |
| 4+ | 267.43 грн |
| 9+ | 252.33 грн |
| IXFA230N075T2-7 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 349.16 грн |
| 3+ | 277.49 грн |
| 9+ | 262.39 грн |
| IXTA120N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.03 грн |
| 3+ | 194.82 грн |
| 6+ | 155.28 грн |
| 15+ | 146.65 грн |
| VUE30-20NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 30A
Max. forward impulse current: 75A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 5.41V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2kV; If: 30A; Ifsm: 75A; screw
Type of bridge rectifier: three-phase
Max. off-state voltage: 2kV
Load current: 30A
Max. forward impulse current: 75A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 5.41V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
товар відсутній
| VUE35-06NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 56A
Max. forward impulse current: 110A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.01V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 56A; Ifsm: 110A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 56A
Max. forward impulse current: 110A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.01V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
товар відсутній
| FMM22-05PF |
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
Power dissipation: 132W
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; PolarHV™; unipolar; 500V; 13A; Idm: 55A
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Technology: PolarHV™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 55A
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 13A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET x2
Power dissipation: 132W
Polarisation: unipolar
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1257.28 грн |
| 2+ | 1104.21 грн |
| IXTA10P50P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
на замовлення 287 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 432.77 грн |
| 3+ | 361.6 грн |
| 4+ | 275.33 грн |
| 9+ | 260.24 грн |
| DSEP12-12B |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.93 грн |
| 9+ | 92.74 грн |
| 25+ | 87.7 грн |
| DSEP12-12BZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 35ns; TO263ABHV; Ufmax: 2.06V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.06V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
товар відсутній
| DSB60C30HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Max. forward impulse current: 570A
Kind of package: tube
Power dissipation: 130W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.47V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Max. forward impulse current: 570A
Kind of package: tube
Power dissipation: 130W
товар відсутній
| DSB60C45HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.58V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Max. forward impulse current: 570A
Kind of package: tube
Power dissipation: 130W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward voltage: 0.58V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Max. forward impulse current: 570A
Kind of package: tube
Power dissipation: 130W
на замовлення 151 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.38 грн |
| 3+ | 210.63 грн |
| 6+ | 159.59 грн |
| 15+ | 150.97 грн |
| DSB60C60HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 570A
Power dissipation: 130W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 130W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 570A
Power dissipation: 130W
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240 грн |
| 3+ | 199.85 грн |
| 6+ | 158.87 грн |
| 15+ | 150.25 грн |
| LOC111 |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.21 грн |
| 8+ | 117.6 грн |
| 10+ | 114.3 грн |
| 20+ | 111.18 грн |
| 50+ | 107.11 грн |
| LOC111S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.64 грн |
| 3+ | 171.81 грн |
| 7+ | 123.65 грн |
| LOC111STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| LIA135 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA135S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA135STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA136 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товар відсутній
| LIA136S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
товар відсутній
| LIA136STR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
товар відсутній
| MDMA425P1600PTSF |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 1.6kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
товар відсутній
| IXTQ34N65X2M |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Mounting: THT
Power dissipation: 40W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 34A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Mounting: THT
Power dissipation: 40W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Drain-source voltage: 650V
Drain current: 34A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 54nC
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 625.54 грн |
| 2+ | 423.42 грн |
| 3+ | 422.7 грн |
| 6+ | 399.7 грн |
| IXTQ48N65X2M |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Mounting: THT
Power dissipation: 70W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 650V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 76nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Mounting: THT
Power dissipation: 70W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 650V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 76nC
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 764.89 грн |
| 2+ | 509.69 грн |
| 5+ | 481.65 грн |
| DSEP29-06AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
товар відсутній
| MWI25-12A7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors
Case: E2-Pack
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors
Case: E2-Pack
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
товар відсутній
| IXTP01N100D |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depleted
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.1µC
Kind of channel: depleted
Mounting: THT
Case: TO220AB
Reverse recovery time: 2ns
Drain-source voltage: 1kV
Drain current: 0.1A
On-state resistance: 80Ω
на замовлення 348 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.61 грн |
| 3+ | 312 грн |
| 8+ | 295.46 грн |
| IXTU01N100 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO251
Mounting: THT
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO251
On-state resistance: 80Ω
товар відсутній
| IXTY01N100 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.1A
Kind of channel: enhanced
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
товар відсутній
| IXTY01N100D |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns
Mounting: SMD
Power dissipation: 25W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 0.1A
Kind of channel: depleted
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO252
On-state resistance: 80Ω
Reverse recovery time: 2ns
товар відсутній
| DSEP60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.81V
Power dissipation: 330W
Reverse recovery time: 40ns
Technology: HiPerFRED™
товар відсутній
| DSEP60-12AR | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Power dissipation: 230W
Reverse recovery time: 40ns
Technology: HiPerFRED™
товар відсутній
| MWI150-12T8T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Application: motors; photovoltaics
Power dissipation: 690W
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Application: motors; photovoltaics
Power dissipation: 690W
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
| IXTA3N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.68 грн |
| IXTY3N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 43.35 грн |
| 11+ | 35.58 грн |
| LBA120P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 635.61 грн |
| 4+ | 268.86 грн |
| 9+ | 253.77 грн |
| LBA120PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| IXTP6N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
на замовлення 118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 476.12 грн |
| 3+ | 316.31 грн |
| 8+ | 299.06 грн |
| CLA15E1200NPZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 145A
Features of semiconductor devices: two gate polarities
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 15A
Gate current: 20/40mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 145A
Features of semiconductor devices: two gate polarities
товар відсутній
| IXFH150N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1059.08 грн |
| 2+ | 781.43 грн |
| 3+ | 738.3 грн |
| IXFT150N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
товар відсутній
| IXTX4N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Mounting: THT
Case: TO247PLUS-HV
Power dissipation: 960W
Gate charge: 139nC
Polarisation: unipolar
Technology: Polar3™
Features of semiconductor devices: standard power mosfet
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 3kV
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 4A; 960W; 420ns
Mounting: THT
Case: TO247PLUS-HV
Power dissipation: 960W
Gate charge: 139nC
Polarisation: unipolar
Technology: Polar3™
Features of semiconductor devices: standard power mosfet
Drain current: 4A
Kind of channel: enhanced
Drain-source voltage: 3kV
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 420ns
товар відсутній
| IXBOD2-50R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
товар відсутній
| IXTR140P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
товар відсутній
| IXBOD2-56R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
товар відсутній