| Фото | Назва | Виробник | Інформація |
Доступність |
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IXTH76N25T | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO247-3 On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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IX2127G | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -500...250mA Number of channels: 1 Supply voltage: 9...12V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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IX2127N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -500...250mA Number of channels: 1 Supply voltage: 9...12V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V |
на замовлення 852 шт: термін постачання 21-30 дні (днів) |
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IXDF602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 935 шт: термін постачання 21-30 дні (днів) |
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IXDF602SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
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IXDF602SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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IXDF602SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Turn-on time: 93ns Turn-off time: 93ns |
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IXDI609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
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IXDI609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
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IXDI609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 1046 шт: термін постачання 21-30 дні (днів) |
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| IXDI609SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
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IXDI609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 387 шт: термін постачання 21-30 дні (днів) |
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IXFA14N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO263HV On-state resistance: 0.55Ω Mounting: SMD Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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IXFH14N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO247-3 On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns |
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IXFP14N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO220AB On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns |
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DPG30I300HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-2 Max. forward voltage: 1.34V Max. forward impulse current: 360A Power dissipation: 160W Technology: HiPerFRED™ 2nd Gen Kind of package: tube |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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DPG30I300PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 1.35V Max. forward impulse current: 360A Power dissipation: 175W Technology: HiPerFRED™ 2nd Gen Kind of package: tube Heatsink thickness: 1.14...1.39mm |
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| DPG30IM300PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 30A; 35ns; TO263AB; Ufmax: 1.66V; 175W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 30A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263AB Max. forward voltage: 1.66V Max. forward impulse current: 360A Power dissipation: 175W Technology: HiPerFRED™ Kind of package: reel; tape |
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IXA4IF1200TC | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268 Mounting: SMD Kind of package: tube Case: TO268 Power dissipation: 45W Technology: Planar; Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 5A Pulsed collector current: 9A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Gate charge: 12nC |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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ITF48IF1200HR | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Mounting: THT Kind of package: tube Case: ISO247™ Power dissipation: 390W Technology: Trench; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT Gate charge: 175nC |
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IXA12IF1200HB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Power dissipation: 85W Technology: Planar; Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Gate charge: 27nC |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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IXA12IF1200PB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3 Mounting: THT Kind of package: tube Case: TO220-3 Power dissipation: 85W Technology: Planar; Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Gate charge: 27nC |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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DSA30C100HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO247-3; tube Mounting: THT Case: TO247-3 Semiconductor structure: common cathode; double Max. forward impulse current: 340A Max. forward voltage: 0.72V Max. off-state voltage: 100V Power dissipation: 85W Kind of package: tube Type of diode: Schottky rectifying Load current: 15A x2 |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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DSA50C100HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 25A x2 Power dissipation: 160W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 440A Max. forward voltage: 0.72V |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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DSA70C100HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 35Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 35A x2 Power dissipation: 160W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.55kA Max. forward voltage: 0.74V |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MCMA110P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 110A Max. load current: 170A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.9kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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IXFN200N10P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A Technology: HiPerFET™; Polar™ Case: SOT227B On-state resistance: 7.5mΩ Power dissipation: 680W Drain current: 200A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 235nC Drain-source voltage: 100V Reverse recovery time: 150ns Kind of channel: enhanced Gate-source voltage: ±30V Semiconductor structure: single transistor Pulsed drain current: 400A Polarisation: unipolar |
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IXFN230N20T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 220A Pulsed drain current: 630A Power dissipation: 1090W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 7.5mΩ Gate charge: 358nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN240N15T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 240A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 600A Power dissipation: 830W Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate charge: 460nC Reverse recovery time: 140ns Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXFN240N25X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 240A Pulsed drain current: 600A Power dissipation: 695W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 4.5mΩ Gate charge: 345nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 165ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN27N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 21.5A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Technology: SiC Kind of channel: enhanced Gate charge: 160nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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IXFN320N17T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 170V Drain current: 260A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 800A Power dissipation: 1.07kW Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate charge: 640nC Reverse recovery time: 150ns Gate-source voltage: ±30V Mechanical mounting: screw |
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CPC1563G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Case: DIP6 Mounting: THT Operating temperature: -40...85°C Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2ms Switched voltage: max. 600V AC; max. 600V DC |
на замовлення 339 шт: термін постачання 21-30 дні (днів) |
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CPC1563GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Case: DIP6 Mounting: SMT Operating temperature: -40...85°C Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2ms Switched voltage: max. 600V AC; max. 600V DC |
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IXGH25N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 301ns Turn-off time: 409ns Features of semiconductor devices: high voltage |
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IXGH2N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 2A Power dissipation: 32W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 13.5A Mounting: THT Gate charge: 10.5nC Kind of package: tube Turn-on time: 115ns Turn-off time: 278ns Features of semiconductor devices: high voltage |
на замовлення 297 шт: термін постачання 21-30 дні (днів) |
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IXTF1R4N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 4.2A Power dissipation: 190W Case: ISOPLUS i4-pac™ x024c Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns |
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| IXTX1R4N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 5A Power dissipation: 960W Case: TO247PLUS-HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns |
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IXTP34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns |
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IXBN75N170A | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B Type of module: IGBT Application: for UPS; motors Technology: BiMOSFET™ Case: SOT227B Max. off-state voltage: 1.7kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 42A Pulsed collector current: 100A Power dissipation: 500W Electrical mounting: screw Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| MKI50-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A Case: E2-Pack Pulsed collector current: 100A Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 225W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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| MKI50-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Case: E2-Pack Pulsed collector current: 100A Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 225W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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| MCO450-20io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2kV; 464A; Y1; Ufmax: 1.33V Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2kV Load current: 464A Case: Y1 Max. forward voltage: 1.33V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCO450-22io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 464A; Y1; Ufmax: 1.33V Case: Y1 Kind of package: bulk Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 464A Type of module: thyristor Semiconductor structure: single thyristor Gate current: 300/400mA Max. forward voltage: 1.33V |
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IXTA24P085T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 83W Gate charge: 41nC Polarisation: unipolar Technology: TrenchP™ Drain current: -24A Kind of channel: enhanced Drain-source voltage: -85V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 65mΩ Reverse recovery time: 40ns |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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PD1201 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT Mounting: THT Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Case: DIP4 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 400V AC Control current max.: 100mA |
на замовлення 185 шт: термін постачання 21-30 дні (днів) |
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PS1201 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 400V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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LBA120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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LBA120L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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LBA120LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LBA120LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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LBA120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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| LBA120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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LCA120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
товар відсутній |
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LCA120L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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LCA120LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
товар відсутній |
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| LCA120LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
товар відсутній |
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LCA120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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| LCA120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
товар відсутній |
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LCB120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
товар відсутній |
| IXTH76N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO247-3; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 399.48 грн |
| 3+ | 333.78 грн |
| 4+ | 252.44 грн |
| 9+ | 239.12 грн |
| IX2127G |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.66 грн |
| 5+ | 79.24 грн |
| 10+ | 71.52 грн |
| 32+ | 67.32 грн |
| 50+ | 66.62 грн |
| IX2127N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 852 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.48 грн |
| 5+ | 86.25 грн |
| 11+ | 77.84 грн |
| 29+ | 73.63 грн |
| 100+ | 72.23 грн |
| IXDF602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.05 грн |
| 6+ | 66.62 грн |
| 10+ | 58.9 грн |
| 16+ | 51.19 грн |
| 43+ | 48.38 грн |
| IXDF602SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDF602SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.05 грн |
| 6+ | 65.91 грн |
| 16+ | 50.49 грн |
| 44+ | 47.68 грн |
| IXDF602SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDI609PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
| IXDI609SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
| IXDI609SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1046 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 113.27 грн |
| 5+ | 95.37 грн |
| 12+ | 71.52 грн |
| 31+ | 67.32 грн |
| IXDI609SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
| IXDI609YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 387 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.34 грн |
| 3+ | 161.28 грн |
| 6+ | 148.66 грн |
| 10+ | 145.15 грн |
| 15+ | 140.95 грн |
| 50+ | 135.34 грн |
| IXFA14N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 307.35 грн |
| 3+ | 255.95 грн |
| 9+ | 242.62 грн |
| 10+ | 238.42 грн |
| 50+ | 233.51 грн |
| IXFH14N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
товар відсутній
| IXFP14N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
товар відсутній
| DPG30I300HA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.34V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.76 грн |
| 3+ | 214.57 грн |
| 5+ | 162.68 грн |
| 14+ | 153.57 грн |
| DPG30I300PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товар відсутній
| DPG30IM300PC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30A; 35ns; TO263AB; Ufmax: 1.66V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30A; 35ns; TO263AB; Ufmax: 1.66V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.66V
Max. forward impulse current: 360A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
товар відсутній
| IXA4IF1200TC |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Power dissipation: 45W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 12nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 5A; 45W; TO268
Mounting: SMD
Kind of package: tube
Case: TO268
Power dissipation: 45W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 5A
Pulsed collector current: 9A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 12nC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 377.58 грн |
| ITF48IF1200HR |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™
Mounting: THT
Kind of package: tube
Case: ISO247™
Power dissipation: 390W
Technology: Trench; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 160A
Turn-on time: 52ns
Turn-off time: 460ns
Type of transistor: IGBT
Gate charge: 175nC
товар відсутній
| IXA12IF1200HB |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.94 грн |
| 3+ | 237.01 грн |
| 5+ | 179.51 грн |
| 13+ | 169.7 грн |
| IXA12IF1200PB |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO220-3
Mounting: THT
Kind of package: tube
Case: TO220-3
Power dissipation: 85W
Technology: Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Gate charge: 27nC
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.39 грн |
| 3+ | 199.85 грн |
| 6+ | 151.46 грн |
| 15+ | 143.05 грн |
| DSA30C100HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO247-3; tube
Mounting: THT
Case: TO247-3
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
Max. off-state voltage: 100V
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO247-3; tube
Mounting: THT
Case: TO247-3
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
Max. off-state voltage: 100V
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Load current: 15A x2
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.69 грн |
| 3+ | 177.41 грн |
| 7+ | 133.23 грн |
| 17+ | 126.22 грн |
| DSA50C100HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 440A
Max. forward voltage: 0.72V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 440A
Max. forward voltage: 0.72V
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.76 грн |
| 3+ | 214.57 грн |
| 5+ | 162.68 грн |
| 14+ | 153.57 грн |
| DSA70C100HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 35Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 35A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.55kA
Max. forward voltage: 0.74V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 35Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 35A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.55kA
Max. forward voltage: 0.74V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 377.58 грн |
| MCMA110P1600TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| IXFN200N10P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Case: SOT227B
On-state resistance: 7.5mΩ
Power dissipation: 680W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 235nC
Drain-source voltage: 100V
Reverse recovery time: 150ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 400A
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Case: SOT227B
On-state resistance: 7.5mΩ
Power dissipation: 680W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 235nC
Drain-source voltage: 100V
Reverse recovery time: 150ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 400A
Polarisation: unipolar
товар відсутній
| IXFN230N20T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN240N15T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2205.08 грн |
| IXFN240N25X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4.5mΩ
Gate charge: 345nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 165ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4.5mΩ
Gate charge: 345nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 165ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN27N120SK |
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXFN320N17T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| CPC1563G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
на замовлення 339 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 335.29 грн |
| 6+ | 141.65 грн |
| 16+ | 133.93 грн |
| CPC1563GS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
товар відсутній
| IXGH25N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGH2N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
на замовлення 297 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1072.33 грн |
| 2+ | 752.41 грн |
| 3+ | 711.04 грн |
| IXTF1R4N450 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 4.2A
Power dissipation: 190W
Case: ISOPLUS i4-pac™ x024c
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 4.2A
Power dissipation: 190W
Case: ISOPLUS i4-pac™ x024c
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
товар відсутній
| IXTX1R4N450HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
товар відсутній
| IXTP34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
товар відсутній
| IXBN75N170A |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of module: IGBT
Application: for UPS; motors
Technology: BiMOSFET™
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 100A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of module: IGBT
Application: for UPS; motors
Technology: BiMOSFET™
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 100A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3574.94 грн |
| MKI50-06A7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MKI50-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MCO450-20io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 464A; Y1; Ufmax: 1.33V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 464A
Case: Y1
Max. forward voltage: 1.33V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 464A; Y1; Ufmax: 1.33V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 464A
Case: Y1
Max. forward voltage: 1.33V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO450-22io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 464A; Y1; Ufmax: 1.33V
Case: Y1
Kind of package: bulk
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 464A
Type of module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Max. forward voltage: 1.33V
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 464A; Y1; Ufmax: 1.33V
Case: Y1
Kind of package: bulk
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 464A
Type of module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Max. forward voltage: 1.33V
товар відсутній
| IXTA24P085T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.02 грн |
| 9+ | 98.17 грн |
| PD1201 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Case: DIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Case: DIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
на замовлення 185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 792.17 грн |
| 3+ | 352.72 грн |
| 7+ | 333.08 грн |
| PS1201 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 571.66 грн |
| 4+ | 241.92 грн |
| 10+ | 228.6 грн |
| LBA120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 632.83 грн |
| 4+ | 267.87 грн |
| 9+ | 253.14 грн |
| LBA120LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LCA120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCA120L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303.58 грн |
| 6+ | 135.34 грн |
| 17+ | 127.62 грн |
| LCA120LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCA120LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCA120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.11 грн |
| 6+ | 136.74 грн |
| 17+ | 129.73 грн |
| LCA120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCB120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній