| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MCMA25P1600TA | IXYS |
 Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V Max. off-state voltage: 1.6kV Max. forward voltage: 1.52V Load current: 25A Semiconductor structure: double series Gate current: 55/80mA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: TO240AA |
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IXTY1R4N120PHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W Case: TO252HV Polarisation: unipolar On-state resistance: 13Ω Type of transistor: N-MOSFET Power dissipation: 86W Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 24.8nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3A Mounting: SMD Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1.4A |
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| MDI300-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 220A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 1.38kW Technology: NPT Mechanical mounting: screw |
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| MDI550-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 460A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Power dissipation: 2.75kW Technology: NPT Mechanical mounting: screw |
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| MIXA20WB1200TML | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 20A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 20A Case: E1-Pack Application: fans; for pump; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 100W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXA81WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A Application: fans; for pump; motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A |
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| MUBW10-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A Application: motors Pulsed collector current: 18A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E1-Pack Gate-emitter voltage: ±20V Collector current: 8A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 50W Technology: NPT Mechanical mounting: screw |
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| MUBW10-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A Application: motors Pulsed collector current: 20A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 15A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 85W Technology: NPT Mechanical mounting: screw |
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| MUBW10-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Application: motors Pulsed collector current: 35A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 25A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 180W Technology: NPT Mechanical mounting: screw |
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| MUBW100-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A Application: motors Pulsed collector current: 200A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 85A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 410W Technology: NPT Mechanical mounting: screw |
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| MUBW15-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 14A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 20A Power dissipation: 75W Technology: NPT Mechanical mounting: screw |
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| MUBW15-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 18A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 100W Technology: NPT Mechanical mounting: screw |
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MUBW15-12A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 13A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 13A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 26A Power dissipation: 90W Technology: NPT Mechanical mounting: screw |
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MUBW15-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 35A Power dissipation: 180W Technology: NPT Mechanical mounting: screw |
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| MUBW15-12T7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 140W Technology: NPT Mechanical mounting: screw |
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| MUBW20-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 17A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 85W Technology: NPT Mechanical mounting: screw |
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| MUBW25-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Technology: NPT Collector current: 21A Power dissipation: 100W Case: E1-Pack Gate-emitter voltage: ±20V Pulsed collector current: 40A Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT |
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| MUBW25-12A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Power dissipation: 225W Technology: NPT Mechanical mounting: screw |
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| MUBW30-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 35A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 180W Technology: NPT Mechanical mounting: screw |
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| MUBW30-12A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 21A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Technology: NPT Mechanical mounting: screw |
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| MUBW35-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 29A Case: E1-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 130W Technology: NPT Mechanical mounting: screw |
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| MUBW50-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 250W Technology: NPT Mechanical mounting: screw |
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| MUBW50-12A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 350W Technology: NPT Mechanical mounting: screw |
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| MUBW50-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 270W Mechanical mounting: screw |
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| MUBW50-17T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 53A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 290W Mechanical mounting: screw |
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| MUBW75-06A8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 0.6kV Collector current: 65A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 320W Technology: NPT Mechanical mounting: screw |
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| MUBW75-12T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 355W Mechanical mounting: screw |
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| MUBW75-17T8 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 34A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Power dissipation: 450W Mechanical mounting: screw |
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| MEA250-12DA | IXYS |
Category: Diode modules Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Max. off-state voltage: 1.2kV Max. forward voltage: 1.54V Load current: 260A Semiconductor structure: common anode Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: Y4-M6 |
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| MDD172-08N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 800V; If: 190A; Y4-M6; Ufmax: 0.96V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 190A Case: Y4-M6 Max. forward voltage: 0.96V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw |
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MDD172-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 190Ax2; Y4-M6; Ufmax: 1.15V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 190A x2 Case: Y4-M6 Max. forward voltage: 1.15V Max. forward impulse current: 5.6kA Electrical mounting: screw Mechanical mounting: screw |
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| MDD172-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 190A; Y4-M6; Ufmax: 0.96V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 190A Case: Y4-M6 Max. forward voltage: 0.96V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw |
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MDD172-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 190A; Y4-M6; Ufmax: 1.15V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 190A Case: Y4-M6 Max. forward voltage: 1.15V Max. forward impulse current: 5.6kA Electrical mounting: screw Max. load current: 300A Mechanical mounting: screw |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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MDD172-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 190A; Y4-M6; Ufmax: 1.15V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 190A Case: Y4-M6 Max. forward voltage: 1.15V Max. forward impulse current: 5.6kA Electrical mounting: screw Max. load current: 300A Mechanical mounting: screw |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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MDD175-34N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 3.4kV; If: 240A; Y1-CU; Ufmax: 1.01V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 3.4kV Load current: 240A Case: Y1-CU Max. forward voltage: 1.01V Max. forward impulse current: 7.23kA Electrical mounting: screw Mechanical mounting: screw |
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IXFP60N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO220AB On-state resistance: 23mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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IXTR40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -22A Power dissipation: 312W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 477ns |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXGH16N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 16A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 78nC Kind of package: tube Turn-on time: 90ns Turn-off time: 1.6µs Features of semiconductor devices: high voltage |
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IXGH16N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 11A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 35ns Turn-off time: 298ns Features of semiconductor devices: high voltage |
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IXTX40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -40A Power dissipation: 890W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 477ns |
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GBO25-16NO1 | IXYS |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 370A Kind of package: tube Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Case: GBFP |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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MDD312-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series Max. forward impulse current: 9.18kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. load current: 520A |
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| MDD312-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series Max. forward impulse current: 10.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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MDD312-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.6kV Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series Max. forward impulse current: 9.18kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. load current: 520A |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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MDD312-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series Max. forward impulse current: 10.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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MDD312-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2.2kV Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series Max. forward impulse current: 9.18kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. load current: 520A |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFK320N17T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 320A Power dissipation: 1670W Case: TO264 On-state resistance: 5.2mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFR20N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube Kind of channel: enhanced Drain-source voltage: 800V Drain current: 10A On-state resistance: 570mΩ Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Gate charge: 86nC |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFT20N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Kind of channel: enhanced Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 86nC |
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IXBOD1-21R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV Mounting: THT Kind of package: bulk Breakover voltage: 2.1kV Type of thyristor: BOD x3 Case: BOD Max. load current: 0.9A |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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CPC2330N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Case: SO8 Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS On-state resistance: 30Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA |
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| CPC2330NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Case: SO8 Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS On-state resistance: 30Ω Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA |
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IXBF42N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c Mounting: THT Case: ISOPLUS i4-pac™ x024c Collector-emitter voltage: 3kV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 200nC Technology: BiMOSFET™ Collector current: 24A Pulsed collector current: 380A Turn-on time: 652ns Turn-off time: 950ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 240W |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| VGF0136AB | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: braking rectifier assemblies; Urmax: 2.8kV Type of bridge rectifier: braking rectifier assemblies Max. off-state voltage: 2.8kV Load current: 1.2A Max. forward impulse current: 80A Electrical mounting: screw Mechanical mounting: screw Version: module Case: VG-B |
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| CMA50E1600HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube Max. off-state voltage: 1.6kV Max. forward impulse current: 595A Case: TO247AD Mounting: THT Kind of package: tube Max. load current: 79A Load current: 50A Gate current: 80mA Type of thyristor: thyristor |
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| CMA50E1600QB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube Mounting: THT Case: TO3P Kind of package: tube Gate current: 80mA Load current: 50A Max. load current: 79A Max. off-state voltage: 1.6kV Type of thyristor: thyristor Max. forward impulse current: 595A |
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IXTR120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Power dissipation: 595W Case: ISOPLUS247™ Gate-source voltage: ±15V On-state resistance: 32mΩ Mounting: THT Gate charge: 740nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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CMA20E1600PB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube Mounting: THT Kind of package: tube Max. forward impulse current: 195A Gate current: 50mA Max. off-state voltage: 1.6kV Load current: 20A Max. load current: 31A Case: TO220AB Type of thyristor: thyristor |
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| CMA20E1600PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube Mounting: SMD Kind of package: tube Max. forward impulse current: 155A Gate current: 28/50mA Max. off-state voltage: 1.6kV Load current: 20A Max. load current: 31A Case: TO263ABHV Type of thyristor: thyristor |
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IXTH1N170DHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1A Power dissipation: 290W Case: TO247HV On-state resistance: 16Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 30ns |
товар відсутній |
| MCMA25P1600TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
товар відсутній
| IXTY1R4N120PHV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO252HV
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
товар відсутній
| MDI300-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MDI550-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 460A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.75kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 460A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.75kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MIXA20WB1200TML |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 20A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 20A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 20A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXA81WB1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: fans; for pump; motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: fans; for pump; motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
товар відсутній
| MUBW10-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Application: motors
Pulsed collector current: 18A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E1-Pack
Gate-emitter voltage: ±20V
Collector current: 8A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 50W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 8A
Application: motors
Pulsed collector current: 18A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E1-Pack
Gate-emitter voltage: ±20V
Collector current: 8A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 50W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW10-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Application: motors
Pulsed collector current: 20A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 15A
Application: motors
Pulsed collector current: 20A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW10-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Application: motors
Pulsed collector current: 35A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Application: motors
Pulsed collector current: 35A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW100-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Application: motors
Pulsed collector current: 200A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 410W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 85A
Application: motors
Pulsed collector current: 200A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 410W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 14A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 14A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Power dissipation: 75W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 18A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 18A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 100W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-12A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 13A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 13A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 26A
Power dissipation: 90W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 13A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 13A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 26A
Power dissipation: 90W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW15-12T7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 140W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW20-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 17A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 17A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 85W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW25-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Technology: NPT
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Technology: NPT
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MUBW25-12A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW30-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 35A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 180W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW30-12A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 21A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 21A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW35-06A6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 29A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 29A
Case: E1-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 130W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW50-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 250W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW50-12A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW50-12T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
товар відсутній
| MUBW50-17T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 53A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 53A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 290W
Mechanical mounting: screw
товар відсутній
| MUBW75-06A8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 65A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 0.6kV
Collector current: 65A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 320W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MUBW75-12T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 355W
Mechanical mounting: screw
товар відсутній
| MUBW75-17T8 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 34A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 34A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 450W
Mechanical mounting: screw
товар відсутній
| MEA250-12DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common anode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common anode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
товар відсутній
| MDD172-08N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD172-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 190Ax2; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 190A x2
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 190Ax2; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 190A x2
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD172-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 190A; Y4-M6; Ufmax: 0.96V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 0.96V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD172-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3425.51 грн |
| MDD172-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 190A; Y4-M6; Ufmax: 1.15V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 190A
Case: Y4-M6
Max. forward voltage: 1.15V
Max. forward impulse current: 5.6kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3526.1 грн |
| MDD175-34N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 3.4kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 3.4kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 3.4kV; If: 240A; Y1-CU; Ufmax: 1.01V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 3.4kV
Load current: 240A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 7.23kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXFP60N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 429.96 грн |
| 3+ | 317.6 грн |
| 7+ | 300.3 грн |
| 50+ | 295.46 грн |
| IXTR40P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -22A
Power dissipation: 312W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -22A
Power dissipation: 312W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1184.06 грн |
| 2+ | 1039.29 грн |
| IXGH16N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
товар відсутній
| IXGH16N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товар відсутній
| IXTX40P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -40A; 890W; 477ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 477ns
товар відсутній
| GBO25-16NO1 |
|
Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 827.87 грн |
| 2+ | 555.62 грн |
| 5+ | 525.18 грн |
| MDD312-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
товар відсутній
| MDD312-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| MDD312-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10175.18 грн |
| MDD312-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| MDD312-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13391.29 грн |
| IXFK320N17T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: TO264
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: TO264
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFR20N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 782.42 грн |
| 2+ | 494.04 грн |
| 5+ | 467.06 грн |
| IXFT20N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
товар відсутній
| IXBOD1-21R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Case: BOD
Max. load current: 0.9A
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Case: BOD
Max. load current: 0.9A
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3015.67 грн |
| CPC2330N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
товар відсутній
| CPC2330NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
товар відсутній
| IXBF42N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 24A
Pulsed collector current: 380A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 240W
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 24A
Pulsed collector current: 380A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 240W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3853.23 грн |
| VGF0136AB |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 2.8kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 2.8kV
Load current: 1.2A
Max. forward impulse current: 80A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-B
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 2.8kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 2.8kV
Load current: 1.2A
Max. forward impulse current: 80A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-B
товар відсутній
| CMA50E1600HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.6kV
Max. forward impulse current: 595A
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.6kV
Max. forward impulse current: 595A
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Type of thyristor: thyristor
товар відсутній
| CMA50E1600QB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Mounting: THT
Case: TO3P
Kind of package: tube
Gate current: 80mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.6kV
Type of thyristor: thyristor
Max. forward impulse current: 595A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Mounting: THT
Case: TO3P
Kind of package: tube
Gate current: 80mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.6kV
Type of thyristor: thyristor
Max. forward impulse current: 595A
товар відсутній
| IXTR120P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Power dissipation: 595W
Case: ISOPLUS247™
Gate-source voltage: ±15V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| CMA20E1600PB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO220AB
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO220AB
Type of thyristor: thyristor
товар відсутній
| CMA20E1600PZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO263ABHV
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO263ABHV
Type of thyristor: thyristor
товар відсутній
| IXTH1N170DHV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
товар відсутній