| Фото | Назва | Виробник | Інформація |
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MM3Z36VT1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
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SZMM3Z36VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 36V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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SZMM3Z36VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 36V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
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MC7918CTG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; tube Case: TO220AB Mounting: THT Kind of package: tube Operating temperature: 0...125°C Manufacturer series: MC7900 Output voltage: -18V Output current: 1A Voltage drop: 1.3V Type of integrated circuit: voltage regulator Number of channels: 1 Kind of voltage regulator: fixed; linear Heatsink thickness: 0.508...0.61mm Tolerance: ±4% |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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MMDL770T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; SOD323; reel,tape; 200mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Semiconductor structure: single diode Capacitance: 1pF Max. forward voltage: 1V Case: SOD323 Kind of package: reel; tape Power dissipation: 0.2W |
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NCV7357D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; SO8 Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC Interface: CAN FD |
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| NCV7357MW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8 Type of integrated circuit: interface Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC Interface: CAN FD |
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| NCV7357MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8 Type of integrated circuit: interface Case: DFNW8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC Interface: CAN FD |
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2SC5227A-4-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SC59 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
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2SC5227A-5-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SOT23 Current gain: 135...270 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
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FDPF14N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP Drain-source voltage: 300V Drain current: 8.4A On-state resistance: 0.29Ω Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: tube Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Mounting: THT Case: TO220FP |
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FDPF190N15A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 17.4A; Idm: 110A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 17.4A Pulsed drain current: 110A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
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FDPF2D3N10C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP Drain-source voltage: 100V Drain current: 157A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 888A Mounting: THT Case: TO220FP |
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FDPF3860T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.7A Power dissipation: 33.8W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 38.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| FSA1208BQX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO Type of integrated circuit: analog switch Number of channels: 8 Case: MLP20 Supply voltage: 2.3...4.3V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: 8PST-NO Quiescent current: 1µA Technology: CMOS; TTL |
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| MC74LVX4051MNTWG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC Type of integrated circuit: digital Case: QFN16 Supply voltage: 2.5...6V DC Mounting: SMD Operating temperature: -55...125°C Manufacturer series: LVX Number of channels: 1 Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 80µA Kind of package: reel; tape |
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| FDMC007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 330A Power dissipation: 57W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC007N08LCDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8 Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 339A Mounting: SMD Case: PQFN8 Drain-source voltage: 80V Drain current: 41A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of package: reel; tape |
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| FDMC008N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 38A Pulsed drain current: 273A Power dissipation: 57W Case: Power33 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC010N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 32A Pulsed drain current: 206A Power dissipation: 52W Case: Power33 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC010N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 32A Pulsed drain current: 200A Power dissipation: 52W Case: Power33 Gate-source voltage: ±20V On-state resistance: 18.4mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC2610 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 42W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 397mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC2674 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 220V Drain current: 7A Pulsed drain current: 13.8A Power dissipation: 42W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 814mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC3020DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC3612 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC3612-L701 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 15A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC4D9P20X8 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -47A Pulsed drain current: -335A Power dissipation: 40W Case: PQFN8 Gate-source voltage: ±12V On-state resistance: 16.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC5614P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Drain-source voltage: -60V Drain current: -13.5A On-state resistance: 168mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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| FDMC610P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -80A Pulsed drain current: -200A Power dissipation: 48W Case: Power33 Gate-source voltage: ±8V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC7200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 40A Power dissipation: 1.9/2.2W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 35.5/18mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC7570S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PQFN8 Drain-source voltage: 25V Drain current: 40A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 59W |
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MC14029BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up/down counter,decade up/down counter Kind of package: reel; tape Supply voltage: 3...18V DC Type of integrated circuit: digital Quiescent current: 600µA Technology: CMOS Kind of integrated circuit: binary up/down counter; decade up/down counter Mounting: SMD Operating temperature: -55...125°C Case: SO16 |
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NLV14029BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up/down counter,decade up/down counter Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Type of integrated circuit: digital Technology: CMOS Kind of integrated circuit: binary up/down counter; decade up/down counter Case: SOIC16 Supply voltage: 3...18V DC |
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| 1N5407G | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 800V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
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MC100EPT25DG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
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M74VHC1G126DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
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| M74VHC1G126DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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M74VHC1G126DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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| NLVVHC1G126DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA Application: automotive industry |
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MMSD103T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 400mW Mounting: SMD Leakage current: 0.1mA Semiconductor structure: single diode Load current: 0.2A Max. forward voltage: 1.25V Max. off-state voltage: 250V Capacitance: 5pF Power dissipation: 0.4W Case: SOD123 Type of diode: switching Reverse recovery time: 50ns |
на замовлення 1867 шт: термін постачання 21-30 дні (днів) |
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FDFS2P106A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8 Mounting: SMD Case: SO8 Power dissipation: 1.6W Polarisation: unipolar Drain current: -3A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 192mΩ |
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| FDY1002PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.83A Power dissipation: 0.625W Case: SOT563F Gate-source voltage: ±8V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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FDY101PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523 Mounting: SMD Power dissipation: 0.625W Gate charge: 1.4nC Polarisation: unipolar Technology: PowerTrench® Drain current: -0.15A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT523 On-state resistance: 20Ω |
на замовлення 2793 шт: термін постачання 21-30 дні (днів) |
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FDH210N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247 Mounting: THT Pulsed drain current: 840A Power dissipation: 462W Gate charge: 301nC Polarisation: unipolar Drain current: 132A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247 On-state resistance: 5.5mΩ |
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| FDMA1027P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -6A Case: MicroFET Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMA1028NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 1.4W Case: MicroFET Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMA1029PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -6A Power dissipation: 1.4W Case: MicroFET Gate-source voltage: ±12V On-state resistance: 141mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDME1023PZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W Mounting: SMD Pulsed drain current: -6A Power dissipation: 1.4W Gate charge: 7.7nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 530mΩ |
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FDB86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK Technology: UniFET™ Mounting: SMD Case: D2PAK Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 42mΩ Polarisation: unipolar Gate charge: 21nC Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 30A Type of transistor: N-MOSFET |
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| FDMA910PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.4A Pulsed drain current: -45A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
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MC74LCX32DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Family: LCX |
на замовлення 416 шт: термін постачання 21-30 дні (днів) |
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| NRVTSM260EV2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape Case: POWERMITE Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 60V Application: automotive industry Type of diode: Schottky rectifying Max. load current: 4A Max. forward voltage: 0.65V Load current: 2A Max. forward impulse current: 50A |
товар відсутній |
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| NRVTSM260EV2T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape Case: POWERMITE Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 60V Application: automotive industry Type of diode: Schottky rectifying Max. load current: 4A Max. forward voltage: 0.65V Load current: 2A Max. forward impulse current: 50A |
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| SS38 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 80V; 3A; SMC; reel,tape; 2.27W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 80V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A Power dissipation: 2.27W |
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| FDMC007N30D | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 18/29A Power dissipation: 1.9/2.5W Case: WDFN8 Gate-source voltage: ±12/±12V On-state resistance: 16.3/9mΩ Mounting: SMD Gate charge: 17/34nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| FDMC7200S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18/13A Pulsed drain current: 40...27A Power dissipation: 1.9/2.9W Case: Power33 Gate-source voltage: ±20V On-state resistance: 30/13.1mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| FDMC7208S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: Power33 Drain-source voltage: 30/30V Drain current: 22/26A On-state resistance: 12.4/7.5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.9W Gate charge: 18/36nC Kind of channel: enhanced Gate-source voltage: ±20/±12V |
товар відсутній |
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| FDMC7672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 33W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| FDMC7680 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Pulsed drain current: 45A Power dissipation: 31W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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 |
FDMC7692 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 40A Power dissipation: 29W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2993 шт: термін постачання 21-30 дні (днів) |
|
| MM3Z36VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
товар відсутній
| SZMM3Z36VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
| SZMM3Z36VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
товар відсутній
| MC7918CTG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Manufacturer series: MC7900
Output voltage: -18V
Output current: 1A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of voltage regulator: fixed; linear
Heatsink thickness: 0.508...0.61mm
Tolerance: ±4%
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Manufacturer series: MC7900
Output voltage: -18V
Output current: 1A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of voltage regulator: fixed; linear
Heatsink thickness: 0.508...0.61mm
Tolerance: ±4%
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.38 грн |
| 10+ | 38.27 грн |
| 34+ | 24.35 грн |
| 93+ | 23.08 грн |
| MMDL770T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Case: SOD323
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; SOD323; reel,tape; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Case: SOD323
Kind of package: reel; tape
Power dissipation: 0.2W
товар відсутній
| NCV7357D13R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; SO8
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Interface: CAN FD
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; SO8
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Interface: CAN FD
товар відсутній
| NCV7357MW0R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8
Type of integrated circuit: interface
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Interface: CAN FD
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8
Type of integrated circuit: interface
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Interface: CAN FD
товар відсутній
| NCV7357MW3R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8
Type of integrated circuit: interface
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Interface: CAN FD
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; CAN FD; SMD; DFNW8
Type of integrated circuit: interface
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Interface: CAN FD
товар відсутній
| 2SC5227A-4-TB-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
товар відсутній
| 2SC5227A-5-TB-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SOT23
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
товар відсутній
| FDPF14N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP
Drain-source voltage: 300V
Drain current: 8.4A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP
Drain-source voltage: 300V
Drain current: 8.4A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Mounting: THT
Case: TO220FP
товар відсутній
| FDPF190N15A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17.4A; Idm: 110A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17.4A
Pulsed drain current: 110A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17.4A; Idm: 110A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17.4A
Pulsed drain current: 110A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDPF2D3N10C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Drain-source voltage: 100V
Drain current: 157A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 888A
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Drain-source voltage: 100V
Drain current: 157A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 888A
Mounting: THT
Case: TO220FP
товар відсутній
| FDPF3860T |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.7A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 38.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.7A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 38.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FSA1208BQX |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Type of integrated circuit: analog switch
Number of channels: 8
Case: MLP20
Supply voltage: 2.3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: 8PST-NO
Quiescent current: 1µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Type of integrated circuit: analog switch
Number of channels: 8
Case: MLP20
Supply voltage: 2.3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: 8PST-NO
Quiescent current: 1µA
Technology: CMOS; TTL
товар відсутній
| MC74LVX4051MNTWG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC
Type of integrated circuit: digital
Case: QFN16
Supply voltage: 2.5...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: LVX
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 80µA
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC
Type of integrated circuit: digital
Case: QFN16
Supply voltage: 2.5...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: LVX
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 80µA
Kind of package: reel; tape
товар відсутній
| FDMC007N08LC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC007N08LCDC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 339A
Mounting: SMD
Case: PQFN8
Drain-source voltage: 80V
Drain current: 41A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 339A
Mounting: SMD
Case: PQFN8
Drain-source voltage: 80V
Drain current: 41A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
товар відсутній
| FDMC008N08C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC010N08C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC010N08LC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 200A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 200A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC2610 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC2674 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC3020DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC3612 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC3612-L701 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC4D9P20X8 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
Gate-source voltage: ±12V
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
Gate-source voltage: ±12V
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC5614P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Drain-source voltage: -60V
Drain current: -13.5A
On-state resistance: 168mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Drain-source voltage: -60V
Drain current: -13.5A
On-state resistance: 168mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| FDMC610P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -80A
Pulsed drain current: -200A
Power dissipation: 48W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -80A
Pulsed drain current: -200A
Power dissipation: 48W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC7200 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 1.9/2.2W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 35.5/18mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 1.9/2.2W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 35.5/18mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC7570S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PQFN8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PQFN8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
товар відсутній
| MC14029BDR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Kind of package: reel; tape
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Mounting: SMD
Operating temperature: -55...125°C
Case: SO16
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Kind of package: reel; tape
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Mounting: SMD
Operating temperature: -55...125°C
Case: SO16
товар відсутній
| NLV14029BDR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Case: SOIC16
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Case: SOIC16
Supply voltage: 3...18V DC
товар відсутній
| 1N5407G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 800V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: switching; THT; 800V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
товар відсутній
| MC100EPT25DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
товар відсутній
| M74VHC1G126DFT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
товар відсутній
| M74VHC1G126DFT2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| M74VHC1G126DTT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 23.7 грн |
| NLVVHC1G126DFT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Application: automotive industry
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Application: automotive industry
товар відсутній
| MMSD103T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Leakage current: 0.1mA
Semiconductor structure: single diode
Load current: 0.2A
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Capacitance: 5pF
Power dissipation: 0.4W
Case: SOD123
Type of diode: switching
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Leakage current: 0.1mA
Semiconductor structure: single diode
Load current: 0.2A
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Capacitance: 5pF
Power dissipation: 0.4W
Case: SOD123
Type of diode: switching
Reverse recovery time: 50ns
на замовлення 1867 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 5.96 грн |
| 161+ | 2.22 грн |
| 250+ | 1.95 грн |
| 494+ | 1.68 грн |
| 1357+ | 1.59 грн |
| FDFS2P106A |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
товар відсутній
| FDY1002PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.83A
Power dissipation: 0.625W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.83A
Power dissipation: 0.625W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| FDY101PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523
Mounting: SMD
Power dissipation: 0.625W
Gate charge: 1.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.15A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT523
On-state resistance: 20Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523
Mounting: SMD
Power dissipation: 0.625W
Gate charge: 1.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.15A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT523
On-state resistance: 20Ω
на замовлення 2793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 17.21 грн |
| 25+ | 14.27 грн |
| 75+ | 11 грн |
| 205+ | 10.4 грн |
| FDH210N08 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
товар відсутній
| FDMA1027P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMA1028NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMA1029PZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDME1023PZT |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W
Mounting: SMD
Pulsed drain current: -6A
Power dissipation: 1.4W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 530mΩ
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W
Mounting: SMD
Pulsed drain current: -6A
Power dissipation: 1.4W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 530mΩ
товар відсутній
| FDB86102LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Technology: UniFET™
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 42mΩ
Polarisation: unipolar
Gate charge: 21nC
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 30A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Technology: UniFET™
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 42mΩ
Polarisation: unipolar
Gate charge: 21nC
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 30A
Type of transistor: N-MOSFET
товар відсутній
| FDMA910PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.4A
Pulsed drain current: -45A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.4A
Pulsed drain current: -45A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| MC74LCX32DTG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
на замовлення 416 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.47 грн |
| 25+ | 15.12 грн |
| 100+ | 12.57 грн |
| 113+ | 7.31 грн |
| 310+ | 6.89 грн |
| NRVTSM260EV2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
товар відсутній
| NRVTSM260EV2T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
товар відсутній
| SS38 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Power dissipation: 2.27W
товар відсутній
| FDMC007N30D |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/29A
Power dissipation: 1.9/2.5W
Case: WDFN8
Gate-source voltage: ±12/±12V
On-state resistance: 16.3/9mΩ
Mounting: SMD
Gate charge: 17/34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/29A
Power dissipation: 1.9/2.5W
Case: WDFN8
Gate-source voltage: ±12/±12V
On-state resistance: 16.3/9mΩ
Mounting: SMD
Gate charge: 17/34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC7200S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18/13A
Pulsed drain current: 40...27A
Power dissipation: 1.9/2.9W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 30/13.1mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18/13A
Pulsed drain current: 40...27A
Power dissipation: 1.9/2.9W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 30/13.1mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC7208S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: Power33
Drain-source voltage: 30/30V
Drain current: 22/26A
On-state resistance: 12.4/7.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.9W
Gate charge: 18/36nC
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: Power33
Drain-source voltage: 30/30V
Drain current: 22/26A
On-state resistance: 12.4/7.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.9W
Gate charge: 18/36nC
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
товар відсутній
| FDMC7672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC7680 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC7692 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.2 грн |
| 8+ | 45.66 грн |
| 24+ | 35.5 грн |
| 64+ | 33.37 грн |