| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| TLX9185A(TEEGBTF(O | TOSHIBA |
 Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Collector-emitter voltage: 80V Case: SO6 Turn-on time: 5µs Turn-off time: 5µs Output voltage: 6V |
товар відсутній |
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TK34E10N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 103W Case: TO220 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1019 шт: термін постачання 21-30 дні (днів) |
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SSM6K403TU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 0.5W Case: UF6 Gate-source voltage: ±10V On-state resistance: 66mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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| SSM3K72KCT,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A Power dissipation: 0.5W Case: CST3C Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced |
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SSM3J328R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 88.4mΩ Mounting: SMD Gate charge: 12.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 3795 шт: термін постачання 21-30 дні (днів) |
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SSM3J334R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Gate charge: 5.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 2355 шт: термін постачання 21-30 дні (днів) |
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SSM3K341R,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Pulsed drain current: 24A Power dissipation: 2.4W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 5823 шт: термін постачання 21-30 дні (днів) |
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SSM3K36FS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 1A Power dissipation: 0.15W Case: SSM Gate-source voltage: ±10V On-state resistance: 1.52Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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SSM6J502NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 60.5mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SSM6J503NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 89.6mΩ Mounting: SMD Gate charge: 12.8nC Kind of package: reel; tape Kind of channel: enhanced |
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SSM6K504NU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 18A Power dissipation: 1.25W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 4040 шт: термін постачання 21-30 дні (днів) |
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SSM3K35MFV,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±10V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SSM3K7002KFU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A Power dissipation: 0.15W Case: SC70 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 38340 шт: термін постачання 21-30 дні (днів) |
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TBC857B,LM(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.32W Case: SOT23 Current gain: 210...475 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
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TDTC114E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.32W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 7808 шт: термін постачання 21-30 дні (днів) |
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TDTC114Y,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 7950 шт: термін постачання 21-30 дні (днів) |
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TDTC124E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.32W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 8100 шт: термін постачання 21-30 дні (днів) |
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TDTC144E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.32W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 10680 шт: термін постачання 21-30 дні (днів) |
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74LCX125FT(AE) | TOSHIBA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Delay time: 7ns Terminal pitch: 0.65mm |
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74LCX126FT(AE) | TOSHIBA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Supply voltage: 1.65...3.6V DC Case: TSSOP14 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Number of channels: 4 Delay time: 7ns Kind of output: 3-state Terminal pitch: 0.65mm Manufacturer series: LCX |
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TK3P50D,RQ | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
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| TLP3115(TP.M.F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 500µs Turn-off time: 0.5ms Max. off-state voltage: 40V |
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| TLP3123(TP.F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 3ms Turn-off time: 0.5ms Max. off-state voltage: 40V |
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TLP3114(F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 500µs Turn-off time: 0.5ms |
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TLP3123(F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 1.2ms Turn-off time: 0.2ms |
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CUS10F30,H3F | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 5A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 0.43V Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky rectifying |
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TTC0002(Q) | TOSHIBA |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 18A Power dissipation: 180W Case: TO3PL Current gain: 80...160 Mounting: THT Frequency: 30MHz |
на замовлення 543 шт: термін постачання 21-30 дні (днів) |
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SSM3K329R,LF(B | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±12V On-state resistance: 289mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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74VHC238FT(BJ) | TOSHIBA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder Technology: C²MOS Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Kind of package: reel; tape Operating temperature: -40...125°C Terminal pitch: 0.65mm Delay time: 5.5ns |
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| TK65G10N1,RQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 283A Power dissipation: 156W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhanced |
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74VHC27FT(BJ) | TOSHIBA |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC Type of integrated circuit: digital Kind of gate: NOR Number of channels: triple; 3 Number of inputs: 3 Technology: C²MOS Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Delay time: 4.1ns Terminal pitch: 0.65mm |
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SSM3K324R,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±12V On-state resistance: 109mΩ Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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SSM3K333R,LF(B | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 6884 шт: термін постачання 21-30 дні (днів) |
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SSM3K37MFV,L3F | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723 Mounting: SMD Drain-source voltage: 20V Drain current: 0.25A On-state resistance: 5.6Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Case: SOT723 |
на замовлення 14225 шт: термін постачання 21-30 дні (днів) |
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TPHR8504PL,L1Q(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Power dissipation: 170W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced |
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TK20G60W,RVQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
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TK20P04M1,RQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 27W Case: DPAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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TK62J60W,S1VQ(O | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Power dissipation: 400W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
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TK650A60F,S4X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Power dissipation: 45W Drain-source voltage: 600V Drain current: 11A On-state resistance: 0.54Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A |
на замовлення 1071 шт: термін постачання 21-30 дні (днів) |
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| TK65E10N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 148A Pulsed drain current: 296A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
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TK65S04N1L,LQ(O | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 107W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| TK6P60W,RVQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 24.8A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
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| TK6Q60W,S1VQ(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 24.8A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
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| TK6R7P06PL,RQ(S2 | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 74A Pulsed drain current: 190A Power dissipation: 66W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
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TK16E60W,S1VX(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 130W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
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TLP267J(E(T | TOSHIBA |
Category: Optotriacs Description: Optotriac; 3.75kV; Uout: 600V; SO6; Ch: 1 Output voltage: 600V Number of channels: 1 Case: SO6 Mounting: SMD Insulation voltage: 3.75kV Trigger current: 3mA Max. off-state voltage: 5V Kind of output: without zero voltage crossing driver Type of optocoupler: optotriac |
на замовлення 8111 шт: термін постачання 21-30 дні (днів) |
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TLP227G(F) | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 2.5kV; DIP4; TLP227G Type of optocoupler: optocoupler Insulation voltage: 2.5kV Kind of output: MOSFET Case: DIP4 Mounting: THT Number of channels: 1 Manufacturer series: TLP227G Turn-on time: 0.3ms Turn-off time: 0.1ms |
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| TLP7930(D4-LF1.F(O | TOSHIBA |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товар відсутній |
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| TLP7930(D4-TP1.F(O | TOSHIBA |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товар відсутній |
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| TLP7930(D4.F(O | TOSHIBA |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товар відсутній |
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| TLP7930(F(O | TOSHIBA |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товар відсутній |
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VFS15-4015PL1-W1 | TOSHIBA |
Category: Three Phase Inverters Description: Vector inverter; 1.5kW; 3x380VAC; 3x380÷500VAC; 0÷10V; VFS15 Additional functions: 3 digital outputs ( + 2 relay outputs); 15 fixed speeds; analog input x2; disturbance filter; Modbus RTU; PID regulator; RS485/422 (max 115kB/s); three combined settings Max motor power: 1.5kW Protection: anti-overload OPP; motor earth fault; short circuit protection SCP Voltage between phases (for three phase system): 3 x 380...500V AC Inverter output voltage: 3 x 380V AC Manufacturer series: VFS15 Current output: 0/4mA...20mA Voltage output: 0...10V Mounting: for wall mounting Kind of display used: LED Electrical connection: screw terminals Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer Type of module: vector inverter Current consumption: 4.1A The programming method: keypad and potentiometer |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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RN1427(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Frequency: 300MHz |
товар відсутній |
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TLP190B(U.C.F) | TOSHIBA |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 2.5kV; MFSOP6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 2.5kV Case: MFSOP6 Turn-on time: 0.2ms Turn-off time: 1ms |
товар відсутній |
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TTA004B,Q(S | TOSHIBA |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1.5A; 1.5W; TO126 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.5A Power dissipation: 1.5W Case: TO126 Current gain: 80...280 Mounting: THT Kind of package: bulk Frequency: 100MHz |
на замовлення 423 шт: термін постачання 21-30 дні (днів) |
|
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| TLP2368(TPR.E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 60ns Turn-off time: 60ns Max. off-state voltage: 800mV Output voltage: 6V |
товар відсутній |
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| TLP2368(V4-TPL,E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; 20Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Transfer rate: 20Mbps Case: SO6 Turn-on time: 30ns Turn-off time: 30ns Slew rate: 25kV/μs Max. off-state voltage: 5V |
товар відсутній |
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TK12P60W.RVQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11.5A Power dissipation: 100W Case: DPAK Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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74VHC221AFT(BE) | TOSHIBA |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; C²MOS; 2÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Technology: C²MOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Operating temperature: -40...125°C Kind of package: reel; tape Terminal pitch: 0.65mm Delay time: 8.1ns |
товар відсутній |
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TK15J50D(F) | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN Mounting: THT Case: TO3PN Kind of package: tube Drain-source voltage: 500V Drain current: 15A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 210W Polarisation: unipolar Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±30V |
на замовлення 941 шт: термін постачання 21-30 дні (днів) |
|
| TLX9185A(TEEGBTF(O |
|
Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
товар відсутній
| TK34E10N1,S1X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.89 грн |
| 10+ | 53.97 грн |
| 17+ | 49.13 грн |
| 45+ | 46.36 грн |
| SSM6K403TU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 281 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.09 грн |
| 27+ | 13.15 грн |
| 80+ | 10.09 грн |
| 219+ | 9.54 грн |
| SSM3K72KCT,L3F(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.5W
Case: CST3C
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.5W
Case: CST3C
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SSM3J328R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 3795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.84 грн |
| 50+ | 6.99 грн |
| 100+ | 6.16 грн |
| 145+ | 5.54 грн |
| 400+ | 5.19 грн |
| 3000+ | 5.12 грн |
| SSM3J334R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 2355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.84 грн |
| 50+ | 7.61 грн |
| 100+ | 6.71 грн |
| 130+ | 6.23 грн |
| 355+ | 5.88 грн |
| SSM3K341R,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 5823 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.16 грн |
| 16+ | 23.04 грн |
| 25+ | 20.34 грн |
| 49+ | 16.68 грн |
| 133+ | 15.78 грн |
| SSM3K36FS,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: SSM
Gate-source voltage: ±10V
On-state resistance: 1.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: SSM
Gate-source voltage: ±10V
On-state resistance: 1.52Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SSM6J502NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 60.5mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SSM6J503NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 89.6mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 89.6mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SSM6K504NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 4040 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.18 грн |
| 40+ | 8.65 грн |
| 100+ | 7.82 грн |
| 115+ | 7.2 грн |
| 310+ | 6.78 грн |
| SSM3K35MFV,L3F(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SSM3K7002KFU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 38340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.42 грн |
| 95+ | 3.78 грн |
| 250+ | 3.4 грн |
| 310+ | 2.59 грн |
| 855+ | 2.45 грн |
| TBC857B,LM(T |
|
Виробник: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
товар відсутній
| TDTC114E,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 7808 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.61 грн |
| 210+ | 1.68 грн |
| 500+ | 1.49 грн |
| 660+ | 1.22 грн |
| 1810+ | 1.16 грн |
| TDTC114Y,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 7950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 145+ | 2.61 грн |
| 205+ | 1.69 грн |
| 500+ | 1.49 грн |
| 660+ | 1.22 грн |
| 1810+ | 1.16 грн |
| TDTC124E,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 8100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.46 грн |
| 220+ | 1.6 грн |
| 500+ | 1.41 грн |
| 660+ | 1.23 грн |
| 1790+ | 1.16 грн |
| TDTC144E,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.32W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 10680 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.46 грн |
| 220+ | 1.6 грн |
| 500+ | 1.41 грн |
| 670+ | 1.22 грн |
| 1820+ | 1.16 грн |
| 74LCX125FT(AE) |
|
Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
товар відсутній
| 74LCX126FT(AE) |
|
Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
товар відсутній
| TK3P50D,RQ |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TLP3115(TP.M.F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Max. off-state voltage: 40V
товар відсутній
| TLP3123(TP.F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 3ms
Turn-off time: 0.5ms
Max. off-state voltage: 40V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; Uinsul: 1.5kV; SOP4; Urmax: 40V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 3ms
Turn-off time: 0.5ms
Max. off-state voltage: 40V
товар відсутній
| TLP3114(F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 500µs
Turn-off time: 0.5ms
товар відсутній
| TLP3123(F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 1.2ms
Turn-off time: 0.2ms
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; 1.5kV; SOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 1.2ms
Turn-off time: 0.2ms
товар відсутній
| CUS10F30,H3F |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
товар відсутній
| TTC0002(Q) |
|
Виробник: TOSHIBA
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 18A; 180W; TO3PL
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 18A
Power dissipation: 180W
Case: TO3PL
Current gain: 80...160
Mounting: THT
Frequency: 30MHz
на замовлення 543 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.65 грн |
| 5+ | 179.9 грн |
| 7+ | 128.7 грн |
| 18+ | 121.78 грн |
| SSM3K329R,LF(B |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 289mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 289mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| 74VHC238FT(BJ) |
|
Виробник: TOSHIBA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Technology: C²MOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Terminal pitch: 0.65mm
Delay time: 5.5ns
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; C²MOS; SMD; TSSOP16; VHC; 0.65mm
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Technology: C²MOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Terminal pitch: 0.65mm
Delay time: 5.5ns
товар відсутній
| TK65G10N1,RQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
товар відсутній
| 74VHC27FT(BJ) |
|
Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.1ns
Terminal pitch: 0.65mm
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; C²MOS; SMD; TSSOP14; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: C²MOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 4.1ns
Terminal pitch: 0.65mm
товар відсутній
| SSM3K324R,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| SSM3K333R,LF(B |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 6884 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.43 грн |
| 45+ | 8.1 грн |
| 100+ | 7.2 грн |
| 140+ | 5.9 грн |
| 375+ | 5.58 грн |
| SSM3K37MFV,L3F |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
на замовлення 14225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.59 грн |
| 95+ | 3.69 грн |
| 105+ | 3.32 грн |
| 320+ | 2.53 грн |
| 880+ | 2.39 грн |
| TPHR8504PL,L1Q(M |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; 170W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 170W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TK20G60W,RVQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TK20P04M1,RQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TK62J60W,S1VQ(O |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK650A60F,S4X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
на замовлення 1071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.36 грн |
| 4+ | 114.17 грн |
| 10+ | 86.49 грн |
| 26+ | 81.65 грн |
| TK65E10N1,S1X(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK65S04N1L,LQ(O |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| TK6P60W,RVQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhanced
товар відсутній
| TK6Q60W,S1VQ(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 24.8A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TK6R7P06PL,RQ(S2 |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Pulsed drain current: 190A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; Idm: 190A; 66W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Pulsed drain current: 190A
Power dissipation: 66W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
товар відсутній
| TK16E60W,S1VX(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TLP267J(E(T |
|
Виробник: TOSHIBA
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SO6; Ch: 1
Output voltage: 600V
Number of channels: 1
Case: SO6
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 3mA
Max. off-state voltage: 5V
Kind of output: without zero voltage crossing driver
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; SO6; Ch: 1
Output voltage: 600V
Number of channels: 1
Case: SO6
Mounting: SMD
Insulation voltage: 3.75kV
Trigger current: 3mA
Max. off-state voltage: 5V
Kind of output: without zero voltage crossing driver
Type of optocoupler: optotriac
на замовлення 8111 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.06 грн |
| 10+ | 38.06 грн |
| 24+ | 33.42 грн |
| 66+ | 31.55 грн |
| 250+ | 31.07 грн |
| TLP227G(F) |
|
Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 2.5kV; DIP4; TLP227G
Type of optocoupler: optocoupler
Insulation voltage: 2.5kV
Kind of output: MOSFET
Case: DIP4
Mounting: THT
Number of channels: 1
Manufacturer series: TLP227G
Turn-on time: 0.3ms
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 2.5kV; DIP4; TLP227G
Type of optocoupler: optocoupler
Insulation voltage: 2.5kV
Kind of output: MOSFET
Case: DIP4
Mounting: THT
Number of channels: 1
Manufacturer series: TLP227G
Turn-on time: 0.3ms
Turn-off time: 0.1ms
товар відсутній
| TLP7930(D4-LF1.F(O |
|
Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
товар відсутній
| TLP7930(D4-TP1.F(O |
|
Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
товар відсутній
| TLP7930(D4.F(O |
|
Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
товар відсутній
| TLP7930(F(O |
|
Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
товар відсутній
| VFS15-4015PL1-W1 |
|
Виробник: TOSHIBA
Category: Three Phase Inverters
Description: Vector inverter; 1.5kW; 3x380VAC; 3x380÷500VAC; 0÷10V; VFS15
Additional functions: 3 digital outputs ( + 2 relay outputs); 15 fixed speeds; analog input x2; disturbance filter; Modbus RTU; PID regulator; RS485/422 (max 115kB/s); three combined settings
Max motor power: 1.5kW
Protection: anti-overload OPP; motor earth fault; short circuit protection SCP
Voltage between phases (for three phase system): 3 x 380...500V AC
Inverter output voltage: 3 x 380V AC
Manufacturer series: VFS15
Current output: 0/4mA...20mA
Voltage output: 0...10V
Mounting: for wall mounting
Kind of display used: LED
Electrical connection: screw terminals
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
Type of module: vector inverter
Current consumption: 4.1A
The programming method: keypad and potentiometer
Category: Three Phase Inverters
Description: Vector inverter; 1.5kW; 3x380VAC; 3x380÷500VAC; 0÷10V; VFS15
Additional functions: 3 digital outputs ( + 2 relay outputs); 15 fixed speeds; analog input x2; disturbance filter; Modbus RTU; PID regulator; RS485/422 (max 115kB/s); three combined settings
Max motor power: 1.5kW
Protection: anti-overload OPP; motor earth fault; short circuit protection SCP
Voltage between phases (for three phase system): 3 x 380...500V AC
Inverter output voltage: 3 x 380V AC
Manufacturer series: VFS15
Current output: 0/4mA...20mA
Voltage output: 0...10V
Mounting: for wall mounting
Kind of display used: LED
Electrical connection: screw terminals
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
Type of module: vector inverter
Current consumption: 4.1A
The programming method: keypad and potentiometer
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22671.53 грн |
| RN1427(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
товар відсутній
| TLP190B(U.C.F) |
|
Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 2.5kV; MFSOP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: MFSOP6
Turn-on time: 0.2ms
Turn-off time: 1ms
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 2.5kV; MFSOP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: MFSOP6
Turn-on time: 0.2ms
Turn-off time: 1ms
товар відсутній
| TTA004B,Q(S |
Виробник: TOSHIBA
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1.5W; TO126
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1.5W
Case: TO126
Current gain: 80...280
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1.5W; TO126
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1.5W
Case: TO126
Current gain: 80...280
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
на замовлення 423 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.18 грн |
| 17+ | 21.45 грн |
| 25+ | 18.89 грн |
| 49+ | 16.4 грн |
| 100+ | 16.33 грн |
| 135+ | 15.43 грн |
| TLP2368(TPR.E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 800mV
Output voltage: 6V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 800mV
Output voltage: 6V
товар відсутній
| TLP2368(V4-TPL,E(T |
|
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; 20Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: SO6
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 25kV/μs
Max. off-state voltage: 5V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; 20Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: SO6
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 25kV/μs
Max. off-state voltage: 5V
товар відсутній
| TK12P60W.RVQ(S |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 74VHC221AFT(BE) |
|
Виробник: TOSHIBA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; C²MOS; 2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: C²MOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...125°C
Kind of package: reel; tape
Terminal pitch: 0.65mm
Delay time: 8.1ns
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; C²MOS; 2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: C²MOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...125°C
Kind of package: reel; tape
Terminal pitch: 0.65mm
Delay time: 8.1ns
товар відсутній
| TK15J50D(F) |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN
Mounting: THT
Case: TO3PN
Kind of package: tube
Drain-source voltage: 500V
Drain current: 15A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 210W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN
Mounting: THT
Case: TO3PN
Kind of package: tube
Drain-source voltage: 500V
Drain current: 15A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 210W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±30V
на замовлення 941 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.69 грн |
| 8+ | 111.4 грн |
| 20+ | 105.87 грн |