| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFQ140N20X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO3P Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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IXFA22N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
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IXFH22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO247-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
на замовлення 273 шт: термін постачання 21-30 дні (днів) |
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IXFP22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
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IXFP22N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 37W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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DSS60-0045B | IXYS |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 60A; 155W; TO247-2; tube Power dissipation: 155W Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 45V Type of diode: Schottky rectifying Max. forward impulse current: 600A Load current: 60A Max. forward voltage: 0.57V |
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IXGR48N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 26A Power dissipation: 125W Case: ISOPLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns |
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PLA192E | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Mounting: THT Manufacturer series: OptoMOS Case: DIP6 Operating temperature: -40...85°C On-state resistance: 22Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Contacts configuration: SPST-NO Max. operating current: 150mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 600V AC; max. 600V DC Control current max.: 50mA |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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IXFK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264 Mounting: THT Drain-source voltage: 200V Drain current: 140A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Kind of channel: enhanced Case: TO264 |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFK140N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264 Mounting: THT Drain-source voltage: 250V Drain current: 140A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 255nC Kind of channel: enhanced Case: TO264 |
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IXFK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Drain-source voltage: 300V Drain current: 140A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 200ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXTK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Mounting: THT Drain-source voltage: 200V Drain current: 140A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 800W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 180ns |
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IXTK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Drain-source voltage: 300V Drain current: 140A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 Reverse recovery time: 250ns |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXYK140N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264 Mounting: THT Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 140A Pulsed collector current: 840A Turn-on time: 122ns Turn-off time: 0.3µs Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 330nC Technology: GenX3™; Planar; XPT™ Case: TO264 |
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IXXH40N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
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IXXH40N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns |
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IXXH40N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 61ns Turn-off time: 207ns |
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IXXH40N65C4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 215A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 71ns Turn-off time: 142ns |
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IXFA16N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IXFH16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO247-3 On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
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IXFP16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO220AB On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 272 шт: термін постачання 21-30 дні (днів) |
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IXFP76N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns Mounting: THT Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 350W Features of semiconductor devices: thrench gate power mosfet Gate charge: 97nC Kind of channel: enhanced Case: TO220AB Reverse recovery time: 69ns Drain-source voltage: 150V Drain current: 76A On-state resistance: 22mΩ |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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IXDH20N120 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
на замовлення 244 шт: термін постачання 21-30 дні (днів) |
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IXDH20N120D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
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IXFK20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: TO264 On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhanced |
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IXFN20N120P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Pulsed drain current: 50A Power dissipation: 595W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 570mΩ Gate charge: 193nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXFR20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 13A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.63Ω Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFX20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXGH20N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
на замовлення 216 шт: термін постачання 21-30 дні (днів) |
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IXGP20N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXGP20N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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IXYA20N120C3HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 215ns |
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IXYH20N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
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IXYH20N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 88A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
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| IXYJ20N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 21A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 20ns Turn-off time: 90ns |
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IXYP20N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 200ns |
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IXYT20N120C3D1HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 17A Power dissipation: 230W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 88A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
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CLA5E1200UC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube Mounting: SMD Type of thyristor: thyristor Case: DPAK Kind of package: tube Max. load current: 7.8A Max. forward impulse current: 60A Load current: 5A Max. off-state voltage: 1.2kV Gate current: 30/50mA |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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| IXA4I1200UC-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Mounting: SMD Gate charge: 12nC Collector-emitter voltage: 1.2kV Collector current: 9A Gate-emitter voltage: ±20V Pulsed collector current: 9A Case: TO252 Technology: XPT™ Turn-on time: 70ns Turn-off time: 250ns Power dissipation: 45W Type of transistor: IGBT |
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| DMA10P1200UZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.27V; Ifsm: 85A Power dissipation: 75W Case: TO252AA Mounting: SMD Kind of package: tube Semiconductor structure: double series Max. off-state voltage: 1.2kV Max. forward impulse current: 85A Type of diode: rectifying Max. forward voltage: 1.27V Load current: 10A |
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DSA15IM200UC | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 15A; DPAK; reel,tape; 75W Mounting: SMD Case: DPAK Power dissipation: 75W Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 200V Max. forward voltage: 0.78V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 200A |
на замовлення 1028 шт: термін постачання 21-30 дні (днів) |
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DMA10IM1200UZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A Power dissipation: 100W Case: TO252AA Mounting: SMD Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward impulse current: 100A Type of diode: rectifying Max. forward voltage: 1.21V Load current: 10A |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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CPC3720CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.4W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 572 шт: термін постачання 21-30 дні (днів) |
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CPC1390G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC Mounting: THT Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Max. operating current: 140mA Manufacturer series: OptoMOS Case: DIP4 Turn-on time: 1ms Turn-off time: 1ms Kind of output: MOSFET Insulation voltage: 5kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 400V AC; max. 400V DC Control current max.: 50mA On-state resistance: 22Ω |
на замовлення 492 шт: термін постачання 21-30 дні (днів) |
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CPC1390GR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC Mounting: SMT Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Max. operating current: 140mA Manufacturer series: OptoMOS Case: DIP4 Turn-on time: 1ms Turn-off time: 1ms Kind of output: MOSFET Insulation voltage: 5kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 400V AC; max. 400V DC Control current max.: 50mA On-state resistance: 22Ω |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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| CPC1390GRTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC Mounting: SMT Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Max. operating current: 140mA Manufacturer series: OptoMOS Case: DIP4 Turn-on time: 1ms Turn-off time: 1ms Kind of output: MOSFET Insulation voltage: 5kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 400V AC; max. 400V DC Control current max.: 50mA On-state resistance: 22Ω |
товар відсутній |
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CPC1390GV | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC Mounting: THT Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Max. operating current: 140mA Manufacturer series: OptoMOS Case: DIP4 Turn-on time: 1ms Turn-off time: 1ms Kind of output: MOSFET Insulation voltage: 5kV Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 400V AC; max. 400V DC Control current max.: 50mA On-state resistance: 22Ω |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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PLA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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PLA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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PLA110LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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| PLA110LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET |
товар відсутній |
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PLA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
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| PLA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET |
товар відсутній |
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PLA190 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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PLA190S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 0.5ms |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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| PLA190STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Max. operating current: 150mA Manufacturer series: OptoMOS Body dimensions: 8.38x6.35x3.3mm Turn-on time: 1ms Turn-off time: 500µs Control current max.: 50mA Switched voltage: max. 400V AC; max. 400V DC Contacts configuration: SPST-NO Type of relay: solid state Relay variant: 1-phase; current source On-state resistance: 22Ω Insulation voltage: 5kV |
товар відсутній |
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PLA192 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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PLA192S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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| PLA192STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
товар відсутній |
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PAA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT Mounting: THT Case: DIP8 Operating temperature: -40...85°C Max. operating current: 150mA Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Turn-on time: 1ms Turn-off time: 250µs Control current max.: 50mA Switched voltage: max. 400V AC; max. 400V DC Contacts configuration: SPST-NO x2 Type of relay: solid state Relay variant: 1-phase; current source On-state resistance: 22Ω Insulation voltage: 3.75kV Kind of output: MOSFET |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| IXFQ140N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 738.55 грн |
| 2+ | 547.66 грн |
| 5+ | 517.5 грн |
| 30+ | 509.09 грн |
| IXFA22N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
товар відсутній
| IXFH22N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
на замовлення 273 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 380.6 грн |
| 3+ | 318.36 грн |
| 4+ | 253.84 грн |
| 9+ | 239.82 грн |
| IXFP22N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
| IXFP22N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.14 грн |
| 3+ | 197.04 грн |
| 5+ | 177.41 грн |
| 13+ | 168.29 грн |
| 50+ | 165.49 грн |
| DSS60-0045B | |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; 155W; TO247-2; tube
Power dissipation: 155W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 600A
Load current: 60A
Max. forward voltage: 0.57V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; 155W; TO247-2; tube
Power dissipation: 155W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 600A
Load current: 60A
Max. forward voltage: 0.57V
товар відсутній
| IXGR48N60C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
товар відсутній
| PLA192E |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Mounting: THT
Manufacturer series: OptoMOS
Case: DIP6
Operating temperature: -40...85°C
On-state resistance: 22Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Mounting: THT
Manufacturer series: OptoMOS
Case: DIP6
Operating temperature: -40...85°C
On-state resistance: 22Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 274.12 грн |
| 7+ | 126.92 грн |
| 18+ | 119.91 грн |
| IXFK140N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 140A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Kind of channel: enhanced
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 140A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Kind of channel: enhanced
Case: TO264
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1082.9 грн |
| IXFK140N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Drain-source voltage: 250V
Drain current: 140A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Drain-source voltage: 250V
Drain current: 140A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Case: TO264
товар відсутній
| IXFK140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Drain-source voltage: 300V
Drain current: 140A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Drain-source voltage: 300V
Drain current: 140A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 200ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1134.25 грн |
| 3+ | 995.74 грн |
| IXTK140N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 140A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 140A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 180ns
товар відсутній
| IXTK140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Drain-source voltage: 300V
Drain current: 140A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Drain-source voltage: 300V
Drain current: 140A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 250ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1267.16 грн |
| 2+ | 1112.84 грн |
| 3+ | 1112.14 грн |
| 10+ | 1069.36 грн |
| IXYK140N90C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
товар відсутній
| IXXH40N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
на замовлення 171 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 384.38 грн |
| 3+ | 321.16 грн |
| 4+ | 255.95 грн |
| 9+ | 241.92 грн |
| IXXH40N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
товар відсутній
| IXXH40N65B4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
товар відсутній
| IXXH40N65C4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
товар відсутній
| IXFA16N60P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 469.71 грн |
| 3+ | 314.15 грн |
| 8+ | 297.32 грн |
| IXFH16N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFP16N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 272 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.29 грн |
| 3+ | 248.93 грн |
| 5+ | 199.15 грн |
| 12+ | 188.63 грн |
| IXFP76N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 350W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Case: TO220AB
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 350W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Case: TO220AB
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.57 грн |
| 3+ | 222.99 грн |
| 5+ | 178.11 грн |
| 13+ | 168.29 грн |
| IXDH20N120 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 244 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 449.32 грн |
| 3+ | 298.72 грн |
| 8+ | 282.59 грн |
| IXDH20N120D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
товар відсутній
| IXFK20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFN20N120P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 570mΩ
Gate charge: 193nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 570mΩ
Gate charge: 193nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2715.57 грн |
| 10+ | 2478.12 грн |
| IXFR20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1632.66 грн |
| 2+ | 1433.3 грн |
| IXFX20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1415.93 грн |
| IXGH20N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 216 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.09 грн |
| 3+ | 307.84 грн |
| 8+ | 291.01 грн |
| 30+ | 286.8 грн |
| IXGP20N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 358.7 грн |
| 3+ | 299.42 грн |
| 4+ | 239.12 грн |
| 10+ | 225.79 грн |
| IXGP20N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 358.7 грн |
| 3+ | 299.42 грн |
| 4+ | 239.12 грн |
| 10+ | 225.79 грн |
| IXYA20N120C3HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній
| IXYH20N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
товар відсутній
| IXYH20N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
на замовлення 291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 853.33 грн |
| 2+ | 570.09 грн |
| 3+ | 569.39 грн |
| 4+ | 538.54 грн |
| IXYJ20N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
товар відсутній
| IXYP20N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
товар відсутній
| IXYT20N120C3D1HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
товар відсутній
| CLA5E1200UC-TRL |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: DPAK
Kind of package: tube
Max. load current: 7.8A
Max. forward impulse current: 60A
Load current: 5A
Max. off-state voltage: 1.2kV
Gate current: 30/50mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; DPAK; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: DPAK
Kind of package: tube
Max. load current: 7.8A
Max. forward impulse current: 60A
Load current: 5A
Max. off-state voltage: 1.2kV
Gate current: 30/50mA
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.12 грн |
| 15+ | 51.89 грн |
| 40+ | 49.09 грн |
| IXA4I1200UC-TRL |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252
Mounting: SMD
Gate charge: 12nC
Collector-emitter voltage: 1.2kV
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Case: TO252
Technology: XPT™
Turn-on time: 70ns
Turn-off time: 250ns
Power dissipation: 45W
Type of transistor: IGBT
товар відсутній
| DMA10P1200UZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.27V; Ifsm: 85A
Power dissipation: 75W
Case: TO252AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Max. forward impulse current: 85A
Type of diode: rectifying
Max. forward voltage: 1.27V
Load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.27V; Ifsm: 85A
Power dissipation: 75W
Case: TO252AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Max. forward impulse current: 85A
Type of diode: rectifying
Max. forward voltage: 1.27V
Load current: 10A
товар відсутній
| DSA15IM200UC |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 15A; DPAK; reel,tape; 75W
Mounting: SMD
Case: DPAK
Power dissipation: 75W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Max. forward voltage: 0.78V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 15A; DPAK; reel,tape; 75W
Mounting: SMD
Case: DPAK
Power dissipation: 75W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 200V
Max. forward voltage: 0.78V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
на замовлення 1028 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.86 грн |
| 6+ | 63.81 грн |
| 17+ | 48.38 грн |
| 47+ | 45.58 грн |
| DMA10IM1200UZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A
Power dissipation: 100W
Case: TO252AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward impulse current: 100A
Type of diode: rectifying
Max. forward voltage: 1.21V
Load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 10A; TO252AA; Ufmax: 1.21V; Ifsm: 100A
Power dissipation: 100W
Case: TO252AA
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Max. forward impulse current: 100A
Type of diode: rectifying
Max. forward voltage: 1.21V
Load current: 10A
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.13 грн |
| 12+ | 72.93 грн |
| 25+ | 71.52 грн |
| 31+ | 69.42 грн |
| CPC3720CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 572 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.15 грн |
| 12+ | 30.57 грн |
| 25+ | 27.98 грн |
| 37+ | 22.09 грн |
| 101+ | 20.83 грн |
| CPC1390G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
на замовлення 492 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.42 грн |
| 9+ | 93.26 грн |
| 25+ | 87.65 грн |
| CPC1390GR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
на замовлення 470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.22 грн |
| 9+ | 93.26 грн |
| 25+ | 87.65 грн |
| CPC1390GRTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
товар відсутній
| CPC1390GV |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 140mA; max.400VAC
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Max. operating current: 140mA
Manufacturer series: OptoMOS
Case: DIP4
Turn-on time: 1ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
On-state resistance: 22Ω
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.22 грн |
| 9+ | 96.07 грн |
| 24+ | 90.46 грн |
| PLA110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 102 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 376.83 грн |
| 5+ | 164.79 грн |
| 14+ | 155.67 грн |
| PLA110L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 385.13 грн |
| 5+ | 171.1 грн |
| 14+ | 161.28 грн |
| PLA110LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 385.13 грн |
| 5+ | 171.1 грн |
| 14+ | 161.28 грн |
| PLA110LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
товар відсутній
| PLA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.34 грн |
| 5+ | 166.89 грн |
| 14+ | 157.78 грн |
| PLA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
товар відсутній
| PLA190 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.09 грн |
| 5+ | 185.12 грн |
| 13+ | 174.6 грн |
| PLA190S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 0.5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.63 грн |
| 5+ | 186.53 грн |
| 13+ | 176.71 грн |
| PLA190STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 500µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 500µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 5kV
товар відсутній
| PLA192 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| PLA192S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| PLA192STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| PAA110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; 22Ω; THT
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 150mA
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Turn-on time: 1ms
Turn-off time: 250µs
Control current max.: 50mA
Switched voltage: max. 400V AC; max. 400V DC
Contacts configuration: SPST-NO x2
Type of relay: solid state
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 744.59 грн |
| 3+ | 314.85 грн |
| 7+ | 297.32 грн |