| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| LCA715STR | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC Mounting: SMT Operating temperature: -40...85°C Max. operating current: 2.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Turn-off time: 0.25ms Case: DIP6 Control current max.: 50mA Manufacturer series: OptoMOS On-state resistance: 0.15Ω Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Turn-on time: 2.5ms |
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IXTP120N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Drain-source voltage: 40V Reverse recovery time: 35ns Power dissipation: 200W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 58nC Kind of channel: enhanced Drain current: 120A On-state resistance: 6.1mΩ |
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IXTP120N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Drain-source voltage: 75V Reverse recovery time: 50ns Power dissipation: 250W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 78nC Kind of channel: enhanced Drain current: 120A On-state resistance: 7.7mΩ |
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IXTP120P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Mounting: THT Case: TO220AB Type of transistor: P-MOSFET Drain-source voltage: -65V Reverse recovery time: 53ns Power dissipation: 298W Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Drain current: -120A On-state resistance: 10mΩ |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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| MG12100S-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: package S Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
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| MG12150S-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: Y4-M5 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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| MG12150W-XN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: package W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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| MG12200D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
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IXBT24N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Turn-off time: 1285ns Turn-on time: 190ns Pulsed collector current: 230A Power dissipation: 250W Collector current: 24A Features of semiconductor devices: high voltage Gate charge: 0.14µC Gate-emitter voltage: ±20V Type of transistor: IGBT Collector-emitter voltage: 1.7kV |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IXFH140N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced |
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IXFT140N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced |
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IXTQ140N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
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IXTT140N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
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CPC3714CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89 Mounting: SMD Drain-source voltage: 350V Drain current: 0.24A On-state resistance: 14Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depleted Gate-source voltage: ±15V Case: SOT89 |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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IXBH6N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3 Mounting: THT Power dissipation: 75W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 17nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 36A Turn-on time: 104ns Turn-off time: 700ns Type of transistor: IGBT |
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| MEK250-12DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 260A Type of module: diode Semiconductor structure: common cathode Case: Y4-M6 Max. forward impulse current: 2.4kA Max. forward voltage: 1.54V |
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LCA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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LCA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
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LCA110LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| LCA110LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
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LCA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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| LCA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
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IXTA4N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns |
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IXTP4N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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| IXGH4N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT |
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IXBK64N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264 Mounting: THT Power dissipation: 735W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 400nC Technology: BiMOSFET™; FRED Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±25V Collector current: 64A Pulsed collector current: 600A Turn-on time: 632ns Turn-off time: 397ns Type of transistor: IGBT |
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| IXFA44N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W Mounting: SMD Power dissipation: 240W Polarisation: unipolar Kind of package: tube Gate charge: 33nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Case: TO263 Reverse recovery time: 87ns Drain-source voltage: 250V Drain current: 44A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
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IXTN17N120L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Technology: Linear™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 34A Power dissipation: 540W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.9Ω Gate charge: 155nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 1.83µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| IXBOD2-04 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 400V |
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CPC1020N | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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CPC1020NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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CLA50E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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CLA50E1200TC-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 555A |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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| CLA50E1200TC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 555A |
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MDD26-12N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Max. load current: 60A Max. forward voltage: 1.05V Load current: 36A Semiconductor structure: double series Max. forward impulse current: 555A Type of module: diode Case: TO240AA |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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MCC44-16io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Type of module: thyristor Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.34V Load current: 49A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 1.15kA |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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MCD162-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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CPC1001N | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4 Mounting: SMD Case: SOP4 CTR@If: 100-800%@0.2mA Type of optocoupler: optocoupler Turn-on time: 1µs Turn-off time: 30µs Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV |
на замовлення 832 шт: термін постачання 21-30 дні (днів) |
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CPC1001NTR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C Mounting: SMD Case: SOP4 Operating temperature: -40...85°C CTR@If: 100-800%@0.2mA Max. operating current: 0.1A Switched voltage: max. 30V DC Control current max.: 5mA Type of optocoupler: optocoupler Turn-on time: 1µs Turn-off time: 30µs Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV |
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CPC1002N | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm Type of relay: solid state Max. operating current: 700mA Switched voltage: max. 60V DC Mounting: SMT Case: SOP4 Relay variant: current source Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 2ms Contacts configuration: SPST-NO On-state resistance: 0.55Ω Manufacturer series: OptoMOS Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV |
на замовлення 1060 шт: термін постачання 21-30 дні (днів) |
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CPC1002NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm Type of relay: solid state Max. operating current: 700mA Switched voltage: max. 60V DC Mounting: SMT Case: SOP4 Relay variant: current source Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 2ms Contacts configuration: SPST-NO On-state resistance: 0.55Ω Manufacturer series: OptoMOS Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 1.5kV |
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CPC1006N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Contacts configuration: SPST-NO Max. operating current: 75mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA On-state resistance: 10Ω Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Insulation voltage: 1.5kV |
на замовлення 3479 шт: термін постачання 21-30 дні (днів) |
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CPC1006NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Contacts configuration: SPST-NO Max. operating current: 75mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA On-state resistance: 10Ω Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Insulation voltage: 1.5kV |
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CPC1009N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Contacts configuration: SPST-NO Max. operating current: 150mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 100V AC; max. 100V DC Control current max.: 50mA On-state resistance: 8Ω Turn-on time: 2ms Turn-off time: 0.5ms Kind of output: MOSFET Insulation voltage: 1.5kV |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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CPC1009NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 4.09x3.81x2.03mm Contacts configuration: SPST-NO Max. operating current: 150mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 100V AC; max. 100V DC Control current max.: 50mA On-state resistance: 8Ω Turn-on time: 2ms Turn-off time: 0.5ms Kind of output: MOSFET Insulation voltage: 1.5kV |
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IXKH47N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
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IXKR47N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 278W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| DSS10-01AS-TUB | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A Max. load current: 35A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: D2PAK Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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DSSK16-01AS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 120A Power dissipation: 90W |
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DSS10-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A Max. load current: 35A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: TO220AC Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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DSS20-01AC | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: ISOPLUS220™ Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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DSSK16-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; 90W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Case: TO220AB Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W Heatsink thickness: 1.14...1.39mm |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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DSSK30-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.64V Case: TO247-3 Kind of package: tube Max. forward impulse current: 230A Power dissipation: 105W |
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DSSK50-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 25A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.45kA Power dissipation: 135W |
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DSSS30-01AR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 190W; ISOPLUS247™ Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: double series Max. forward voltage: 0.63V Case: ISOPLUS247™ Kind of package: tube Max. forward impulse current: 600A Power dissipation: 190W |
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| MIXA80R1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 84A Case: V1-A-Pack Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 225A Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXA150Q1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 175A Case: V1-A-Pack Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 450A Power dissipation: 695W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXA150R1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 175A Case: V1-A-Pack Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 450A Power dissipation: 695W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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IXA60IF1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 56A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXA70I1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 65A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 350W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw |
товар відсутній |
| LCA715STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
| IXTP120N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Reverse recovery time: 35ns
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 6.1mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Reverse recovery time: 35ns
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 6.1mΩ
товар відсутній
| IXTP120N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Reverse recovery time: 50ns
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 7.7mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Reverse recovery time: 50ns
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 7.7mΩ
товар відсутній
| IXTP120P065T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Case: TO220AB
Type of transistor: P-MOSFET
Drain-source voltage: -65V
Reverse recovery time: 53ns
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Drain current: -120A
On-state resistance: 10mΩ
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Case: TO220AB
Type of transistor: P-MOSFET
Drain-source voltage: -65V
Reverse recovery time: 53ns
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Drain current: -120A
On-state resistance: 10mΩ
на замовлення 73 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 364.38 грн |
| 3+ | 304.45 грн |
| 4+ | 242.18 грн |
| 10+ | 229.03 грн |
| MG12100S-BN2MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
товар відсутній
| MG12150S-BN2MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
| MG12150W-XN2MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
| MG12200D-BN2MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній
| IXBT24N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1625.94 грн |
| 2+ | 1428.15 грн |
| 3+ | 1427.46 грн |
| 10+ | 1406.7 грн |
| IXFH140N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT140N10P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTQ140N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
| IXTT140N10P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
| CPC3714CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.57 грн |
| 9+ | 39.44 грн |
| 25+ | 35.29 грн |
| 29+ | 28.65 грн |
| 78+ | 27.12 грн |
| IXBH6N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
товар відсутній
| MEK250-12DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
товар відсутній
| LCA110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.56 грн |
| 9+ | 93.41 грн |
| 24+ | 88.57 грн |
| LCA110L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
| LCA110LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.61 грн |
| 9+ | 95.49 грн |
| 24+ | 89.95 грн |
| LCA110LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
| LCA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.9 грн |
| 9+ | 89.95 грн |
| 25+ | 85.11 грн |
| LCA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
| IXTA4N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
товар відсутній
| IXTP4N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
на замовлення 258 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.38 грн |
| 4+ | 110.02 грн |
| 10+ | 87.88 грн |
| 25+ | 83.03 грн |
| IXGH4N250C |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
| IXBK64N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
товар відсутній
| IXFA44N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
| IXTN17N120L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXBOD2-04 |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
| CPC1020N |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 318.18 грн |
| CPC1020NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| CLA50E1200HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
на замовлення 220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 334.58 грн |
| 3+ | 274.7 грн |
| 4+ | 247.71 грн |
| 10+ | 233.87 грн |
| 30+ | 230.41 грн |
| CLA50E1200TC-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 548.44 грн |
| 3+ | 364.65 грн |
| 7+ | 344.58 грн |
| CLA50E1200TC-TRL |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
товар відсутній
| MDD26-12N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Type of module: diode
Case: TO240AA
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Type of module: diode
Case: TO240AA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1289.87 грн |
| 2+ | 1132.01 грн |
| MCC44-16io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1811.49 грн |
| 2+ | 1590.76 грн |
| 3+ | 1590.07 грн |
| MCD162-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3909.12 грн |
| CPC1001N |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
Mounting: SMD
Case: SOP4
CTR@If: 100-800%@0.2mA
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
Mounting: SMD
Case: SOP4
CTR@If: 100-800%@0.2mA
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
на замовлення 832 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.31 грн |
| 20+ | 41.1 грн |
| 55+ | 38.82 грн |
| 500+ | 37.57 грн |
| CPC1001NTR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Mounting: SMD
Case: SOP4
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Control current max.: 5mA
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Mounting: SMD
Case: SOP4
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Control current max.: 5mA
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 30µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
товар відсутній
| CPC1002N |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Max. operating current: 700mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 0.55Ω
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Max. operating current: 700mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 0.55Ω
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
на замовлення 1060 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.62 грн |
| 14+ | 58.81 грн |
| 39+ | 55.35 грн |
| CPC1002NTR |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Max. operating current: 700mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 0.55Ω
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Max. operating current: 700mA
Switched voltage: max. 60V DC
Mounting: SMT
Case: SOP4
Relay variant: current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 0.55Ω
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 1.5kV
товар відсутній
| CPC1006N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
на замовлення 3479 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.65 грн |
| 13+ | 65.73 грн |
| 34+ | 62.27 грн |
| CPC1006NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 75mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
On-state resistance: 10Ω
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
товар відсутній
| CPC1009N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
On-state resistance: 8Ω
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
On-state resistance: 8Ω
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
на замовлення 418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.29 грн |
| 13+ | 65.73 грн |
| 34+ | 62.27 грн |
| CPC1009NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
On-state resistance: 8Ω
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Contacts configuration: SPST-NO
Max. operating current: 150mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Control current max.: 50mA
On-state resistance: 8Ω
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
товар відсутній
| IXKH47N60C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
| IXKR47N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1295.84 грн |
| 2+ | 1137.54 грн |
| DSS10-01AS-TUB |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSSK16-01AS |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSS10-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSS20-01AC |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSSK16-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; 90W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; 90W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Heatsink thickness: 1.14...1.39mm
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.49 грн |
| DSSK30-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 230A
Power dissipation: 105W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 230A
Power dissipation: 105W
товар відсутній
| DSSK50-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Power dissipation: 135W
товар відсутній
| DSSS30-01AR |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 190W; ISOPLUS247™
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: double series
Max. forward voltage: 0.63V
Case: ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 600A
Power dissipation: 190W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 190W; ISOPLUS247™
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: double series
Max. forward voltage: 0.63V
Case: ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 600A
Power dissipation: 190W
товар відсутній
| MIXA80R1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXA150Q1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXA150R1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| IXA60IF1200NA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1576.02 грн |
| 2+ | 1383.87 грн |
| IXA70I1200NA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
товар відсутній