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IXXH80N65B4H1 IXXH80N65B4H1 IXYS IXXH80N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
товар відсутній
IXFB52N90P IXFB52N90P IXYS IXFB52N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
товар відсутній
IXFK32N90P IXFK32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
товар відсутній
IXFN52N90P IXFN52N90P IXYS IXFN52N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
товар відсутній
IXFX32N90P IXFX32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
товар відсутній
IXGR32N90B2D1 IXGR32N90B2D1 IXYS IXGR32N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
товар відсутній
IX4427MTR IX4427MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
CPC1230N CPC1230N IXYS CPC1230N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
3+174.44 грн
11+ 75.03 грн
31+ 70.82 грн
Мінімальне замовлення: 3
CPC1230NTR CPC1230NTR IXYS CPC1230N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
товар відсутній
CPC1231N CPC1231N IXYS CPC1231N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
3+183.5 грн
11+ 81.34 грн
28+ 77.13 грн
Мінімальне замовлення: 3
CPC1231NTR CPC1231NTR IXYS CPC1231N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
товар відсутній
IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 194 шт:
термін постачання 21-30 дні (днів)
2+331.52 грн
3+ 276.98 грн
4+ 220.18 грн
11+ 208.26 грн
Мінімальне замовлення: 2
IXFT320N10T2 IXFT320N10T2 IXYS IXFH(T)320N10T2.pdf IXFT320N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
товар відсутній
DSEI60-12A DSEI60-12A IXYS DSEI60-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Mounting: THT
Power dissipation: 189W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 52A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.5kA
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
1+496.9 грн
3+ 335.89 грн
7+ 317.65 грн
VUM24-05N VUM24-05N IXYS VUM24-05N.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 24A; V1-B-Pack; Ugs: ±20V; Idm: 95A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 24A
Case: V1-B-Pack
Topology: buck chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Pulsed drain current: 95A
Power dissipation: 170W
Gate charge: 0.35µC
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
LCA710 LCA710 IXYS 1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 503 шт:
термін постачання 21-30 дні (днів)
1+505.96 грн
4+ 218.08 грн
11+ 205.46 грн
LCA710R LCA710R IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
LCA710RTR IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
LCA710S LCA710S IXYS media?resourcetype=datasheets&itemid=bcafd9c0-59bc-419f-b8a7-858e3f050c3d&filename=littelfuse-integrated-circuits-lca710-series-datasheet Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
1+505.96 грн
4+ 218.08 грн
11+ 205.46 грн
LCA710STR IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
LCA715 LCA715 IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+578.45 грн
LCA715S LCA715S IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
1+598.09 грн
4+ 257.35 грн
9+ 243.32 грн
LCA715STR IXYS LCA715.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
IXTP120N04T2 IXTP120N04T2 IXYS IXTA(P)120N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Reverse recovery time: 35ns
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 6.1mΩ
товар відсутній
IXTP120N075T2 IXTP120N075T2 IXYS IXTA(P)120N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Reverse recovery time: 50ns
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 7.7mΩ
товар відсутній
IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Case: TO220AB
Type of transistor: P-MOSFET
Drain-source voltage: -65V
Reverse recovery time: 53ns
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Drain current: -120A
On-state resistance: 10mΩ
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
2+369.27 грн
3+ 308.54 грн
4+ 245.43 грн
10+ 232.1 грн
Мінімальне замовлення: 2
MG12100S-BN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
товар відсутній
MG12150S-BN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
MG12200D-BN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12200d_bn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній
IXBT24N170 IXBT24N170 IXYS IXBH(t)24N170.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1647.01 грн
2+ 1445.92 грн
10+ 1425.59 грн
IXFH140N10P IXFH140N10P IXYS IXFH(T)140N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+582.99 грн
3+ 387.08 грн
6+ 366.04 грн
IXFT140N10P IXFT140N10P IXYS IXFH(T)140N10P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+589.78 грн
2+ 435.46 грн
6+ 411.62 грн
IXTQ140N10P IXTQ140N10P IXYS IXTQ140N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTT140N10P IXTT140N10P IXYS IXTQ140N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
CPC3714CTR CPC3714CTR IXYS CPC3714.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
6+66.45 грн
9+ 39.97 грн
25+ 35.76 грн
29+ 29.03 грн
78+ 27.49 грн
Мінімальне замовлення: 6
IXBH6N170 IXBH6N170 IXYS IXBH6N170_IXBT6N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
товар відсутній
MEK250-12DA IXYS 96514.pdf Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
товар відсутній
LCA110 LCA110 IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
3+146.5 грн
9+ 94.67 грн
24+ 89.76 грн
Мінімальне замовлення: 3
LCA110L LCA110L IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110LS LCA110LS IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
2+217.49 грн
9+ 96.77 грн
24+ 91.16 грн
Мінімальне замовлення: 2
LCA110LSTR IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110S LCA110S IXYS lca110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
2+210.69 грн
9+ 91.16 грн
25+ 86.25 грн
Мінімальне замовлення: 2
LCA110STR IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
IXTA4N80P IXTA4N80P IXYS IXTA(P)4N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
товар відсутній
IXTP4N80P IXTP4N80P IXYS IXTA(P)4N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
на замовлення 258 шт:
термін постачання 21-30 дні (днів)
3+135.17 грн
4+ 111.49 грн
10+ 89.06 грн
25+ 84.15 грн
Мінімальне замовлення: 3
IXGH4N250C IXYS DS100320(IXGH-GT4N250C).pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
IXBK64N250 IXBK64N250 IXYS IXBK(X)64N250.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
товар відсутній
IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTN17N120L IXTN17N120L IXYS IXTN17N120L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXBOD2-04 IXYS IXBOD2.pdf Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
CPC1020N CPC1020N IXYS cpc1020n.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+322.45 грн
Мінімальне замовлення: 2
CPC1020NTR CPC1020NTR IXYS CPC1020N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
CLA50E1200HB CLA50E1200HB IXYS CLA50E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Max. forward impulse current: 0.65kA
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
2+339.07 грн
3+ 278.39 грн
4+ 250.34 грн
10+ 237.01 грн
30+ 233.51 грн
Мінімальне замовлення: 2
CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS CLA50E1200TC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
1+555.8 грн
3+ 369.54 грн
7+ 349.21 грн
CLA50E1200TC-TRL IXYS CLA50E1200TC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
товар відсутній
MDD26-12N1B MDD26-12N1B IXYS MDD26-12N1B-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Type of module: diode
Case: TO240AA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+1307.19 грн
2+ 1147.2 грн
MCC44-16io1B MCC44-16io1B IXYS MCC44-16IO1B-DTE.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+1835.8 грн
2+ 1612.11 грн
3+ 1611.41 грн
IXXH80N65B4H1 IXXH80N65B4H1.pdf
IXXH80N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
товар відсутній
IXFB52N90P IXFB52N90P.pdf
IXFB52N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
товар відсутній
IXFK32N90P IXFK(X)32N90P.pdf
IXFK32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
товар відсутній
IXFN52N90P IXFN52N90P.pdf
IXFN52N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
товар відсутній
IXFX32N90P IXFK(X)32N90P.pdf
IXFX32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
товар відсутній
IXGR32N90B2D1 IXGR32N90B2D1.pdf
IXGR32N90B2D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
товар відсутній
IX4427MTR IX4426-27-28.pdf
IX4427MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
CPC1230N CPC1230N.pdf
CPC1230N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+174.44 грн
11+ 75.03 грн
31+ 70.82 грн
Мінімальне замовлення: 3
CPC1230NTR CPC1230N.pdf
CPC1230NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
товар відсутній
CPC1231N CPC1231N.pdf
CPC1231N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+183.5 грн
11+ 81.34 грн
28+ 77.13 грн
Мінімальне замовлення: 3
CPC1231NTR CPC1231N.pdf
CPC1231NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
товар відсутній
IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 194 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+331.52 грн
3+ 276.98 грн
4+ 220.18 грн
11+ 208.26 грн
Мінімальне замовлення: 2
IXFT320N10T2 IXFH(T)320N10T2.pdf IXFT320N10T2.pdf
IXFT320N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
товар відсутній
DSEI60-12A DSEI60-12A.pdf
DSEI60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Mounting: THT
Power dissipation: 189W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 52A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.5kA
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+496.9 грн
3+ 335.89 грн
7+ 317.65 грн
VUM24-05N VUM24-05N.pdf
VUM24-05N
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 24A; V1-B-Pack; Ugs: ±20V; Idm: 95A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 24A
Case: V1-B-Pack
Topology: buck chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Pulsed drain current: 95A
Power dissipation: 170W
Gate charge: 0.35µC
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
LCA710 1
LCA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 503 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+505.96 грн
4+ 218.08 грн
11+ 205.46 грн
LCA710R LCA710.pdf
LCA710R
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
LCA710RTR LCA710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
LCA710S media?resourcetype=datasheets&itemid=bcafd9c0-59bc-419f-b8a7-858e3f050c3d&filename=littelfuse-integrated-circuits-lca710-series-datasheet
LCA710S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+505.96 грн
4+ 218.08 грн
11+ 205.46 грн
LCA710STR LCA710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.5Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
LCA715 LCA715.pdf
LCA715
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+578.45 грн
LCA715S LCA715.pdf
LCA715S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+598.09 грн
4+ 257.35 грн
9+ 243.32 грн
LCA715STR LCA715.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
IXTP120N04T2 IXTA(P)120N04T2.pdf
IXTP120N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Reverse recovery time: 35ns
Power dissipation: 200W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 58nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 6.1mΩ
товар відсутній
IXTP120N075T2 IXTA(P)120N075T2.pdf
IXTP120N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Reverse recovery time: 50ns
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 78nC
Kind of channel: enhanced
Drain current: 120A
On-state resistance: 7.7mΩ
товар відсутній
IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Case: TO220AB
Type of transistor: P-MOSFET
Drain-source voltage: -65V
Reverse recovery time: 53ns
Power dissipation: 298W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Drain current: -120A
On-state resistance: 10mΩ
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+369.27 грн
3+ 308.54 грн
4+ 245.43 грн
10+ 232.1 грн
Мінімальне замовлення: 2
MG12100S-BN2MM littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
товар відсутній
MG12150S-BN2MM littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
товар відсутній
MG12200D-BN2MM littelfuse_power_semiconductor_igbt_module_mg12200d_bn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній
IXBT24N170 IXBH(t)24N170.pdf
IXBT24N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1647.01 грн
2+ 1445.92 грн
10+ 1425.59 грн
IXFH140N10P IXFH(T)140N10P.pdf
IXFH140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+582.99 грн
3+ 387.08 грн
6+ 366.04 грн
IXFT140N10P IXFH(T)140N10P.pdf
IXFT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+589.78 грн
2+ 435.46 грн
6+ 411.62 грн
IXTQ140N10P IXTQ140N10P-DTE.pdf
IXTQ140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTT140N10P IXTQ140N10P-DTE.pdf
IXTT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
CPC3714CTR CPC3714.pdf
CPC3714CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+66.45 грн
9+ 39.97 грн
25+ 35.76 грн
29+ 29.03 грн
78+ 27.49 грн
Мінімальне замовлення: 6
IXBH6N170 IXBH6N170_IXBT6N170.pdf
IXBH6N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
товар відсутній
MEK250-12DA 96514.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
товар відсутній
LCA110 LCA110.pdf
LCA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+146.5 грн
9+ 94.67 грн
24+ 89.76 грн
Мінімальне замовлення: 3
LCA110L LCA110L.pdf
LCA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110LS LCA110L.pdf
LCA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+217.49 грн
9+ 96.77 грн
24+ 91.16 грн
Мінімальне замовлення: 2
LCA110LSTR LCA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110S lca110.pdf
LCA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+210.69 грн
9+ 91.16 грн
25+ 86.25 грн
Мінімальне замовлення: 2
LCA110STR LCA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
IXTA4N80P IXTA(P)4N80P.pdf
IXTA4N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
товар відсутній
IXTP4N80P IXTA(P)4N80P.pdf
IXTP4N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
на замовлення 258 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+135.17 грн
4+ 111.49 грн
10+ 89.06 грн
25+ 84.15 грн
Мінімальне замовлення: 3
IXGH4N250C DS100320(IXGH-GT4N250C).pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
IXBK64N250 IXBK(X)64N250.pdf
IXBK64N250
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
товар відсутній
IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTN17N120L IXTN17N120L.pdf
IXTN17N120L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXBOD2-04 IXBOD2.pdf
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
CPC1020N cpc1020n.pdf
CPC1020N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+322.45 грн
Мінімальне замовлення: 2
CPC1020NTR CPC1020N.pdf
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
CLA50E1200HB CLA50E1200HB.pdf
CLA50E1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Max. forward impulse current: 0.65kA
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+339.07 грн
3+ 278.39 грн
4+ 250.34 грн
10+ 237.01 грн
30+ 233.51 грн
Мінімальне замовлення: 2
CLA50E1200TC-TUB CLA50E1200TC.pdf
CLA50E1200TC-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+555.8 грн
3+ 369.54 грн
7+ 349.21 грн
CLA50E1200TC-TRL CLA50E1200TC.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
товар відсутній
MDD26-12N1B MDD26-12N1B-DTE.pdf
MDD26-12N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Type of module: diode
Case: TO240AA
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1307.19 грн
2+ 1147.2 грн
MCC44-16io1B MCC44-16IO1B-DTE.pdf
MCC44-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1835.8 грн
2+ 1612.11 грн
3+ 1611.41 грн
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