| Фото | Назва | Виробник | Інформація |
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IXFN200N10P | IXYS |
  Category: Transistor modules MOSFETDescription: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A Technology: HiPerFET™; Polar™ Case: SOT227B On-state resistance: 7.5mΩ Power dissipation: 680W Drain current: 200A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 235nC Drain-source voltage: 100V Reverse recovery time: 150ns Kind of channel: enhanced Gate-source voltage: ±30V Semiconductor structure: single transistor Pulsed drain current: 400A Polarisation: unipolar |
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IXFN230N20T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 220A Pulsed drain current: 630A Power dissipation: 1090W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 7.5mΩ Gate charge: 358nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN240N15T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 150V Drain current: 240A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 600A Power dissipation: 830W Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate charge: 460nC Reverse recovery time: 140ns Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXFN240N25X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 240A Pulsed drain current: 600A Power dissipation: 695W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 4.5mΩ Gate charge: 345nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 165ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN27N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 21.5A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Technology: SiC Kind of channel: enhanced Gate charge: 160nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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IXFN320N17T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 170V Drain current: 260A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.2mΩ Pulsed drain current: 800A Power dissipation: 1.07kW Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate charge: 640nC Reverse recovery time: 150ns Gate-source voltage: ±30V Mechanical mounting: screw |
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CPC1563G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Case: DIP6 Mounting: THT Operating temperature: -40...85°C Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2ms Switched voltage: max. 600V AC; max. 600V DC |
на замовлення 339 шт: термін постачання 21-30 дні (днів) |
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CPC1563GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Case: DIP6 Mounting: SMT Operating temperature: -40...85°C Max. operating current: 120mA Turn-off time: 2ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Contacts configuration: SPST-NO Insulation voltage: 3.75kV Turn-on time: 2ms Switched voltage: max. 600V AC; max. 600V DC |
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IXGH25N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 301ns Turn-off time: 409ns Features of semiconductor devices: high voltage |
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IXGH2N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 2A Power dissipation: 32W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 13.5A Mounting: THT Gate charge: 10.5nC Kind of package: tube Turn-on time: 115ns Turn-off time: 278ns Features of semiconductor devices: high voltage |
на замовлення 297 шт: термін постачання 21-30 дні (днів) |
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IXTF1R4N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 4.2A Power dissipation: 190W Case: ISOPLUS i4-pac™ x024c Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns |
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| IXTX1R4N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1.4A Pulsed drain current: 5A Power dissipation: 960W Case: TO247PLUS-HV Gate-source voltage: ±20V On-state resistance: 40Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 660ns |
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IXTP34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns |
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IXBN75N170A | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B Type of module: IGBT Application: for UPS; motors Technology: BiMOSFET™ Case: SOT227B Max. off-state voltage: 1.7kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 42A Pulsed collector current: 100A Power dissipation: 500W Electrical mounting: screw Mechanical mounting: screw |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| MKI50-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A Case: E2-Pack Pulsed collector current: 100A Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 225W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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| MKI50-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Case: E2-Pack Pulsed collector current: 100A Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 225W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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| MCO450-20io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2kV; 464A; Y1; Ufmax: 1.33V Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2kV Load current: 464A Case: Y1 Max. forward voltage: 1.33V Gate current: 300/400mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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| MCO450-22io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 464A; Y1; Ufmax: 1.33V Case: Y1 Kind of package: bulk Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 464A Type of module: thyristor Semiconductor structure: single thyristor Gate current: 300/400mA Max. forward voltage: 1.33V |
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IXTA24P085T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 83W Gate charge: 41nC Polarisation: unipolar Technology: TrenchP™ Drain current: -24A Kind of channel: enhanced Drain-source voltage: -85V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 65mΩ Reverse recovery time: 40ns |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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PD1201 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT Mounting: THT Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Case: DIP4 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 1A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 400V AC Control current max.: 100mA |
на замовлення 185 шт: термін постачання 21-30 дні (днів) |
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PS1201 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 400V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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LBA120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LBA120L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LBA120LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LBA120LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LBA120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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| LBA120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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LCA120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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LCA120L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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LCA120LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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| LCA120LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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LCA120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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| LCA120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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LCB120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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LCB120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC Mounting: SMT Case: DIP6 Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| MMIX1H60N150V1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.5kV; SMPD; SMD; 32kA Mounting: SMD Max. off-state voltage: 1.5kV Case: SMPD Type of thyristor: thyristor Max. forward impulse current: 32kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) |
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UGE1112AY4 | IXYS |
Category: Diodes - others Description: Diode: rectifying; 8kV; 2/3.2/4.2A; 7A; 2.5kW; Ø55x23mm; Ifsm: 120A Semiconductor structure: single diode Case: Ø55x23mm Power dissipation: 2.5kW Kind of package: bulk Features of semiconductor devices: high voltage Max. forward impulse current: 120A Max. forward voltage: 6.25V Max. off-state voltage: 8kV Load current: 2/3.2/4.2A Max. load current: 7A Type of diode: rectifying Fastening thread: M8 Mounting: screw type |
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MDD44-16N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 9A; TO240AA; Ufmax: 1.26V Max. off-state voltage: 1.6kV Load current: 9A Max. forward impulse current: 980A Electrical mounting: screw Max. forward voltage: 1.26V Case: TO240AA Mechanical mounting: screw Semiconductor structure: double series Max. load current: 100A Type of module: diode |
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VBO54-16NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 55A Max. forward impulse current: 300A Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| VUO34-16NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 45A; Ifsm: 300A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 45A Max. forward impulse current: 300A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.13V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw |
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| VUO64-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 0.55kA Electrical mounting: screw Version: module - slim Max. forward voltage: 1.07V Leads: M5 screws Case: PWS-D flat Mechanical mounting: screw |
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VUO84-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 90A Max. forward impulse current: 750A Electrical mounting: screw Version: module - slim Max. forward voltage: 1.08V Leads: M5 screws Case: PWS-D flat Mechanical mounting: screw |
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IXDN609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 140 шт: термін постачання 21-30 дні (днів) |
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IXDN609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 825 шт: термін постачання 21-30 дні (днів) |
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CPC1983B | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC Operating temperature: -40...85°C Manufacturer series: OptoMOS On-state resistance: 6Ω Turn-on time: 5ms Turn-off time: 2ms Body dimensions: 21.08x16.76x3.3mm Kind of output: MOSFET Insulation voltage: 5kV Contacts configuration: SPST-NO Max. operating current: 0.5A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 600V AC; max. 600V DC Control current max.: 50mA Mounting: SMT Case: SO8 |
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MCO150-12IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw Gate current: 150/200mA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: SOT227B Max. off-state voltage: 1.2kV Max. forward voltage: 1.89V Load current: 158A Semiconductor structure: single thyristor |
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| MII150-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Type of module: IGBT Application: motors Power dissipation: 760W Technology: NPT Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: screw Semiconductor structure: transistor/transistor Case: Y3-DCB Gate-emitter voltage: ±20V Collector current: 120A Topology: IGBT half-bridge |
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DSS25-0025B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 25V; 25A; 90W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 25V Load current: 25A Semiconductor structure: single diode Max. forward voltage: 0.44V Case: TO220AC Kind of package: tube Max. forward impulse current: 330A Power dissipation: 90W |
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DSS25-0045A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 25A; 135W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 25A Semiconductor structure: single diode Max. forward voltage: 0.59V Case: TO220AC Kind of package: tube Max. forward impulse current: 0.4kA Power dissipation: 135W |
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IXTN40P50P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -500V Drain current: -40A Pulsed drain current: -120A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.23Ω Gate charge: 205nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 477ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTH440N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 440A Power dissipation: 1kW Case: TO247-3 On-state resistance: 1.8mΩ Mounting: THT Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns |
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IXTN240N075L2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A Technology: Linear L2™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 225A Pulsed drain current: 720A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 7mΩ Gate charge: 546nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 206ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTP140N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 140A Power dissipation: 250W Case: TO220AB On-state resistance: 5.4mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
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IXTP140N12T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 140A Power dissipation: 577W Case: TO220AB On-state resistance: 10mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 65ns |
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IXTT440N04T4HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 440A Power dissipation: 940W Case: TO268HV On-state resistance: 1.25mΩ Mounting: SMD Gate charge: 480nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns |
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IXTT440N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 440A Power dissipation: 1kW Case: TO268 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns |
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IXTX240N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 240A Power dissipation: 960W Case: PLUS247™ On-state resistance: 7mΩ Mounting: THT Gate charge: 546nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 206ns |
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MMIX1F520N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD Kind of package: tube Power dissipation: 830W Gate charge: 545nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 500A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SMPD On-state resistance: 1.6mΩ Reverse recovery time: 150ns Mounting: SMD |
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| MCMA700P1600CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 700A Case: ComPack Max. forward voltage: 1.41V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 300/400mA |
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| MCMA700P1600NCA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 700A Case: ComPack Max. forward voltage: 1.41V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 300/400mA |
товар відсутній |
| IXFN200N10P | |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Case: SOT227B
On-state resistance: 7.5mΩ
Power dissipation: 680W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 235nC
Drain-source voltage: 100V
Reverse recovery time: 150ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 400A
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Case: SOT227B
On-state resistance: 7.5mΩ
Power dissipation: 680W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 235nC
Drain-source voltage: 100V
Reverse recovery time: 150ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 400A
Polarisation: unipolar
товар відсутній
| IXFN230N20T |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN240N15T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2175.87 грн |
| IXFN240N25X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4.5mΩ
Gate charge: 345nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 165ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Pulsed drain current: 600A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4.5mΩ
Gate charge: 345nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 165ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN27N120SK |
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXFN320N17T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| CPC1563G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
на замовлення 339 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 330.85 грн |
| 6+ | 139.77 грн |
| 16+ | 132.16 грн |
| CPC1563GS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 120mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2ms
Switched voltage: max. 600V AC; max. 600V DC
товар відсутній
| IXGH25N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGH2N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
на замовлення 297 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1058.13 грн |
| 2+ | 742.45 грн |
| 3+ | 701.62 грн |
| IXTF1R4N450 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 4.2A
Power dissipation: 190W
Case: ISOPLUS i4-pac™ x024c
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 4.2A; 190W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 4.2A
Power dissipation: 190W
Case: ISOPLUS i4-pac™ x024c
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
товар відсутній
| IXTX1R4N450HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 1.4A
Pulsed drain current: 5A
Power dissipation: 960W
Case: TO247PLUS-HV
Gate-source voltage: ±20V
On-state resistance: 40Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 660ns
товар відсутній
| IXTP34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
товар відсутній
| IXBN75N170A |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of module: IGBT
Application: for UPS; motors
Technology: BiMOSFET™
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 100A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of module: IGBT
Application: for UPS; motors
Technology: BiMOSFET™
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 100A
Power dissipation: 500W
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3527.59 грн |
| MKI50-06A7T |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MKI50-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Case: E2-Pack
Pulsed collector current: 100A
Collector current: 50A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 225W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MCO450-20io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 464A; Y1; Ufmax: 1.33V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 464A
Case: Y1
Max. forward voltage: 1.33V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2kV; 464A; Y1; Ufmax: 1.33V
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2kV
Load current: 464A
Case: Y1
Max. forward voltage: 1.33V
Gate current: 300/400mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCO450-22io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 464A; Y1; Ufmax: 1.33V
Case: Y1
Kind of package: bulk
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 464A
Type of module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Max. forward voltage: 1.33V
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 464A; Y1; Ufmax: 1.33V
Case: Y1
Kind of package: bulk
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 464A
Type of module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Max. forward voltage: 1.33V
товар відсутній
| IXTA24P085T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.32 грн |
| 9+ | 96.87 грн |
| PD1201 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Case: DIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Mounting: THT
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Case: DIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 1A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
на замовлення 185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 781.67 грн |
| 3+ | 348.04 грн |
| 7+ | 328.67 грн |
| PS1201 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 564.09 грн |
| 4+ | 238.72 грн |
| 10+ | 225.57 грн |
| LBA120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 624.45 грн |
| 4+ | 264.32 грн |
| 9+ | 249.79 грн |
| LBA120LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LBA120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 170mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| LCA120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCA120L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 299.55 грн |
| 6+ | 133.54 грн |
| 17+ | 125.93 грн |
| LCA120LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCA120LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCA120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.03 грн |
| 6+ | 134.93 грн |
| 17+ | 128.01 грн |
| LCA120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LCB120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LCB120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 357.68 грн |
| 6+ | 159.15 грн |
| 14+ | 150.15 грн |
| MMIX1H60N150V1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Mounting: SMD
Max. off-state voltage: 1.5kV
Case: SMPD
Type of thyristor: thyristor
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Mounting: SMD
Max. off-state voltage: 1.5kV
Case: SMPD
Type of thyristor: thyristor
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
товар відсутній
| UGE1112AY4 |
|
Виробник: IXYS
Category: Diodes - others
Description: Diode: rectifying; 8kV; 2/3.2/4.2A; 7A; 2.5kW; Ø55x23mm; Ifsm: 120A
Semiconductor structure: single diode
Case: Ø55x23mm
Power dissipation: 2.5kW
Kind of package: bulk
Features of semiconductor devices: high voltage
Max. forward impulse current: 120A
Max. forward voltage: 6.25V
Max. off-state voltage: 8kV
Load current: 2/3.2/4.2A
Max. load current: 7A
Type of diode: rectifying
Fastening thread: M8
Mounting: screw type
Category: Diodes - others
Description: Diode: rectifying; 8kV; 2/3.2/4.2A; 7A; 2.5kW; Ø55x23mm; Ifsm: 120A
Semiconductor structure: single diode
Case: Ø55x23mm
Power dissipation: 2.5kW
Kind of package: bulk
Features of semiconductor devices: high voltage
Max. forward impulse current: 120A
Max. forward voltage: 6.25V
Max. off-state voltage: 8kV
Load current: 2/3.2/4.2A
Max. load current: 7A
Type of diode: rectifying
Fastening thread: M8
Mounting: screw type
товар відсутній
| MDD44-16N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 9A; TO240AA; Ufmax: 1.26V
Max. off-state voltage: 1.6kV
Load current: 9A
Max. forward impulse current: 980A
Electrical mounting: screw
Max. forward voltage: 1.26V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Max. load current: 100A
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 9A; TO240AA; Ufmax: 1.26V
Max. off-state voltage: 1.6kV
Load current: 9A
Max. forward impulse current: 980A
Electrical mounting: screw
Max. forward voltage: 1.26V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Max. load current: 100A
Type of module: diode
товар відсутній
| VBO54-16NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 300A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 300A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 961.26 грн |
| 3+ | 844.16 грн |
| 25+ | 828.25 грн |
| VUO34-16NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 45A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 300A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.13V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 45A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 300A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.13V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
товар відсутній
| VUO64-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module - slim
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D flat
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 0.55kA
Electrical mounting: screw
Version: module - slim
Max. forward voltage: 1.07V
Leads: M5 screws
Case: PWS-D flat
Mechanical mounting: screw
товар відсутній
| VUO84-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module - slim
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D flat
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module - slim
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D flat
Mechanical mounting: screw
товар відсутній
| IXDN609PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.77 грн |
| 5+ | 92.03 грн |
| 12+ | 71.96 грн |
| 31+ | 68.5 грн |
| IXDN609YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 825 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.17 грн |
| 3+ | 167.45 грн |
| 6+ | 143.23 грн |
| 16+ | 135.62 грн |
| CPC1983B |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 6Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x16.76x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Mounting: SMT
Case: SO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 6Ω
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 21.08x16.76x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
Mounting: SMT
Case: SO8
товар відсутній
| MCO150-12IO1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.89V
Load current: 158A
Semiconductor structure: single thyristor
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Gate current: 150/200mA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.89V
Load current: 158A
Semiconductor structure: single thyristor
товар відсутній
| MII150-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Type of module: IGBT
Application: motors
Power dissipation: 760W
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 120A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A
Type of module: IGBT
Application: motors
Power dissipation: 760W
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 120A
Topology: IGBT half-bridge
товар відсутній
| DSS25-0025B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 330A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 330A
Power dissipation: 90W
товар відсутній
| DSS25-0045A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; 135W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 0.4kA
Power dissipation: 135W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; 135W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 0.4kA
Power dissipation: 135W
товар відсутній
| IXTN40P50P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Pulsed drain current: -120A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 477ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -40A
Pulsed drain current: -120A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 477ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTH440N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
товар відсутній
| IXTN240N075L2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 225A
Pulsed drain current: 720A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7mΩ
Gate charge: 546nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 206ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 225A
Pulsed drain current: 720A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7mΩ
Gate charge: 546nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 206ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTP140N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товар відсутній
| IXTP140N12T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
товар відсутній
| IXTT440N04T4HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
товар відсутній
| IXTT440N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
товар відсутній
| IXTX240N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 240A; 960W; PLUS247™; 206ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 240A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 546nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 206ns
товар відсутній
| MMIX1F520N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Kind of package: tube
Power dissipation: 830W
Gate charge: 545nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 500A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 1.6mΩ
Reverse recovery time: 150ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Kind of package: tube
Power dissipation: 830W
Gate charge: 545nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 500A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 1.6mΩ
Reverse recovery time: 150ns
Mounting: SMD
товар відсутній
| MCMA700P1600CA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
товар відсутній
| MCMA700P1600NCA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
товар відсутній