| Фото | Назва | Виробник | Інформація |
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 +1 |
MMIX1F520N075T2 | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD Kind of package: tube Power dissipation: 830W Gate charge: 545nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 500A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SMPD On-state resistance: 1.6mΩ Reverse recovery time: 150ns Mounting: SMD |
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| MCMA700P1600CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 700A Case: ComPack Max. forward voltage: 1.41V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 300/400mA |
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| MCMA700P1600NCA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 700A Case: ComPack Max. forward voltage: 1.41V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 300/400mA |
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| MCMA700P1800CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 700A; ComPack; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 700A Case: ComPack Max. forward voltage: 1.41V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 300/400mA |
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| MDMA700P1600CC | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 700A; ComPack; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 700A Case: ComPack Max. forward voltage: 1.05V Max. forward impulse current: 20kA Electrical mounting: screw Mechanical mounting: screw |
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PAA140P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 1ms |
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| PAA140PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 1ms |
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| MIXA101W1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Type of module: IGBT Technology: XPT™ Topology: MOSFET three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 108A |
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| DNA120E2200KO | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 120A; tube; Ifsm: 2kA; ISOPLUS264™ Mounting: THT Max. off-state voltage: 2.2kV Load current: 120A Kind of package: tube Semiconductor structure: single diode Case: ISOPLUS264™ Type of diode: rectifying Max. forward impulse current: 2kA |
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IXGH32N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 32A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: THT Gate charge: 89nC Kind of package: tube Turn-on time: 239ns Turn-off time: 1.38µs |
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IXGT32N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 32A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: SMD Gate charge: 89nC Kind of package: tube Turn-on time: 239ns Turn-off time: 1.38s |
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IXFX26N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.5Ω Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced |
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LAA127 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; THT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
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LAA127L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; THT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
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LAA127LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LAA127LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
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LAA127P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
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LAA127PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
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| LAA127PLTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
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| LAA127PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
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LAA127S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Contacts configuration: SPST-NO x2 Insulation voltage: 3.75kV Turn-on time: 5ms Switched voltage: max. 250V AC; max. 250V DC Case: DIP8 Max. operating current: 0.2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 10Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| LAA127STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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LBA127 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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LBA127L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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LBA127LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| LBA127LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 0.2A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms |
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IXFB62N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns Case: PLUS264™ Mounting: THT Kind of package: tube On-state resistance: 0.14Ω Drain current: 62A Drain-source voltage: 800V Power dissipation: 1.56kW Reverse recovery time: 300ns Polarisation: unipolar Gate charge: 0.27µC Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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DNA30ER2200IY | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; TO262AA Mounting: THT Max. off-state voltage: 2.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Case: TO262AA Type of diode: rectifying Max. forward impulse current: 370A |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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DSP25-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W Mounting: THT Kind of package: tube Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 160W Type of diode: rectifying Case: TO247-3 Max. off-state voltage: 1.2kV Max. forward voltage: 1.16V Load current: 25A |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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DSP25-12AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Mounting: SMD Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 160W Type of diode: rectifying Case: D3PAK Max. off-state voltage: 1.2kV Max. forward voltage: 1.16V Load current: 25A |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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IXFH42N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 42A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
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IXFH52N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 52A Power dissipation: 960W Case: TO247-3 On-state resistance: 0.12Ω Mounting: THT Gate charge: 113nC Kind of package: tube Kind of channel: enhanced |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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IXFT52N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 52A Power dissipation: 960W Case: TO268 On-state resistance: 0.12Ω Mounting: SMD Gate charge: 113nC Kind of package: tube Kind of channel: enhanced |
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IXTB62N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 62A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 550nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXTP02N50D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.2A Power dissipation: 25W Case: TO220AB On-state resistance: 30Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: depleted Reverse recovery time: 5ns |
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| IXTY02N50D | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 25W Case: TO252 Gate-source voltage: ±20V On-state resistance: 30Ω Mounting: SMD Kind of channel: depleted Reverse recovery time: 1µs |
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IXTX3N250L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns Case: PLUS247™ Mounting: THT Kind of package: tube Drain-source voltage: 2.5kV Type of transistor: N-MOSFET On-state resistance: 10Ω Reverse recovery time: 370ns Power dissipation: 417W Gate charge: 230nC Polarisation: unipolar Features of semiconductor devices: linear power mosfet Drain current: 3A Kind of channel: enhanced |
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| CPC1988J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 900mA; max.1kVAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 900mA Switched voltage: max. 1kV AC Relay variant: 1-phase On-state resistance: 2.5Ω Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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IXTA36N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 36A Power dissipation: 300W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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DSA30C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220AB; tube Mounting: THT Case: TO220AB Semiconductor structure: common cathode; double Max. forward impulse current: 340A Max. forward voltage: 0.73V Max. off-state voltage: 100V Power dissipation: 35W Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Load current: 15A x2 |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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DSA30C100PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220FP; tube Mounting: THT Case: TO220FP Semiconductor structure: common cathode; double Max. forward impulse current: 340A Max. forward voltage: 0.73V Max. off-state voltage: 100V Power dissipation: 35W Kind of package: tube Type of diode: Schottky rectifying Load current: 15A x2 |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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DSA30C100QB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO3P; tube Mounting: THT Case: TO3P Semiconductor structure: common cathode; double Max. forward impulse current: 340A Max. forward voltage: 0.72V Max. off-state voltage: 100V Power dissipation: 85W Kind of package: tube Type of diode: Schottky rectifying Load current: 15A x2 |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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DPG15I200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W Mounting: THT Case: TO220AC Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 200V Max. forward voltage: 1.26V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 240A Power dissipation: 90W Kind of package: tube Type of diode: rectifying |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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DPG15I300PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W Mounting: THT Case: TO220AC Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Heatsink thickness: 1.14...1.39mm Max. off-state voltage: 300V Max. forward voltage: 1.26V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 240A Power dissipation: 90W Kind of package: tube Type of diode: rectifying |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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DPG15I400PM | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W Mounting: THT Power dissipation: 35W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO220FP-2 Max. off-state voltage: 0.4kV Max. forward voltage: 1.39V Load current: 15A Semiconductor structure: single diode Reverse recovery time: 45ns Max. forward impulse current: 190A |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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DSA80C100PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 40Ax2; 250W; TO220AB; tube Type of diode: Schottky rectifying Max. off-state voltage: 100V Max. forward voltage: 0.8V Load current: 40A x2 Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Max. forward impulse current: 490A Kind of package: tube Power dissipation: 250W Heatsink thickness: 1.14...1.39mm |
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DSS2X41-01A | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw Max. off-state voltage: 100V Max. forward voltage: 0.7V Load current: 40A x2 Semiconductor structure: double independent Case: SOT227B Features of semiconductor devices: Schottky Max. forward impulse current: 0.45kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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IXFN80N50 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Pulsed drain current: 320A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN80N50P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 66A Pulsed drain current: 200A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 65mΩ Gate charge: 195nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN80N50Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 65mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFX200N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced |
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IXFX230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 358nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFX240N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 240A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5mΩ Mounting: THT Gate charge: 345nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 177ns |
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IXTX200N10L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns Case: PLUS247™ Mounting: THT On-state resistance: 11mΩ Kind of package: tube Power dissipation: 1.04kW Drain current: 200A Features of semiconductor devices: linear power mosfet Gate charge: 540nC Drain-source voltage: 100V Reverse recovery time: 245ns Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
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LCC110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: THT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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LCC110P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x2.16mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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| LCC110PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x2.16mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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LCC110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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| LCC110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω Mounting: SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Body dimensions: 9.65x6.35x3.3mm Case: DIP8 On-state resistance: 35Ω Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Type of relay: solid state Turn-on time: 4ms Turn-off time: 4ms Insulation voltage: 3.75kV Contacts configuration: SPDT Max. operating current: 120mA |
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LCC120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω Type of relay: solid state Contacts configuration: SPDT Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source Mounting: THT Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Case: DIP8 Manufacturer series: OptoMOS Insulation voltage: 3.75kV Max. operating current: 0.17A Turn-off time: 5ms Turn-on time: 5ms On-state resistance: 20Ω Control current max.: 50mA |
товар відсутній |
| MMIX1F520N075T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Kind of package: tube
Power dissipation: 830W
Gate charge: 545nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 500A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 1.6mΩ
Reverse recovery time: 150ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD
Kind of package: tube
Power dissipation: 830W
Gate charge: 545nC
Polarisation: unipolar
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Drain current: 500A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SMPD
On-state resistance: 1.6mΩ
Reverse recovery time: 150ns
Mounting: SMD
товар відсутній
| MCMA700P1600CA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
товар відсутній
| MCMA700P1600NCA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
товар відсутній
| MCMA700P1800CA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 700A; ComPack; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.41V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 300/400mA
товар відсутній
| MDMA700P1600CC |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| PAA140P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
товар відсутній
| PAA140PTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
товар відсутній
| MIXA101W1200EH |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Technology: XPT™
Topology: MOSFET three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 108A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Technology: XPT™
Topology: MOSFET three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 108A
товар відсутній
| DNA120E2200KO |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 120A; tube; Ifsm: 2kA; ISOPLUS264™
Mounting: THT
Max. off-state voltage: 2.2kV
Load current: 120A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS264™
Type of diode: rectifying
Max. forward impulse current: 2kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 120A; tube; Ifsm: 2kA; ISOPLUS264™
Mounting: THT
Max. off-state voltage: 2.2kV
Load current: 120A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS264™
Type of diode: rectifying
Max. forward impulse current: 2kA
товар відсутній
| IXGH32N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
товар відсутній
| IXGT32N120A3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: SMD
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38s
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: SMD
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38s
товар відсутній
| IXFX26N120P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| LAA127 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LAA127L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; THT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LAA127LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 643.82 грн |
| 3+ | 272.62 грн |
| 9+ | 258.09 грн |
| LAA127LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LAA127P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LAA127PL |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LAA127PLTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LAA127PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LAA127S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 0.2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 643.82 грн |
| 3+ | 272.62 грн |
| 9+ | 258.09 грн |
| LAA127STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LBA127 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 626.68 грн |
| 3+ | 278.16 грн |
| 9+ | 263.63 грн |
| LBA127L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 638.6 грн |
| 3+ | 284.39 грн |
| 8+ | 268.47 грн |
| LBA127LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 638.6 грн |
| 3+ | 284.39 грн |
| 8+ | 268.47 грн |
| LBA127LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| IXFB62N80Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.14Ω
Drain current: 62A
Drain-source voltage: 800V
Power dissipation: 1.56kW
Reverse recovery time: 300ns
Polarisation: unipolar
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
On-state resistance: 0.14Ω
Drain current: 62A
Drain-source voltage: 800V
Power dissipation: 1.56kW
Reverse recovery time: 300ns
Polarisation: unipolar
Gate charge: 0.27µC
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2243.68 грн |
| DNA30ER2200IY |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; TO262AA
Mounting: THT
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO262AA
Type of diode: rectifying
Max. forward impulse current: 370A
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; TO262AA
Mounting: THT
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO262AA
Type of diode: rectifying
Max. forward impulse current: 370A
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.63 грн |
| 3+ | 240.79 грн |
| 5+ | 175.06 грн |
| 13+ | 165.37 грн |
| DSP25-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
на замовлення 116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 314.46 грн |
| 3+ | 257.4 грн |
| 4+ | 232.49 грн |
| 10+ | 220.04 грн |
| 30+ | 216.58 грн |
| DSP25-12AT-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: D3PAK
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Mounting: SMD
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 160W
Type of diode: rectifying
Case: D3PAK
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.16V
Load current: 25A
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 505.22 грн |
| 3+ | 336.28 грн |
| 7+ | 318.29 грн |
| IXFH42N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH52N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 78 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 701.2 грн |
| 2+ | 477.44 грн |
| 5+ | 451.14 грн |
| IXFT52N50P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTB62N50L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3327.89 грн |
| IXTP02N50D |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 5ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 5ns
товар відсутній
| IXTY02N50D |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depleted
Reverse recovery time: 1µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depleted
Reverse recovery time: 1µs
товар відсутній
| IXTX3N250L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 3A; 417W; PLUS247™; 370ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
On-state resistance: 10Ω
Reverse recovery time: 370ns
Power dissipation: 417W
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 3A
Kind of channel: enhanced
товар відсутній
| CPC1988J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 900mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 900mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 2.5Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 900mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 900mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 2.5Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| IXTA36N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.37 грн |
| 3+ | 205.5 грн |
| 5+ | 175.75 грн |
| 13+ | 166.76 грн |
| DSA30C100PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220AB; tube
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
Max. off-state voltage: 100V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220AB; tube
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
Max. off-state voltage: 100V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Load current: 15A x2
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.29 грн |
| DSA30C100PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220FP; tube
Mounting: THT
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
Max. off-state voltage: 100V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 35W; TO220FP; tube
Mounting: THT
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.73V
Max. off-state voltage: 100V
Power dissipation: 35W
Kind of package: tube
Type of diode: Schottky rectifying
Load current: 15A x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.02 грн |
| 10+ | 89.26 грн |
| 11+ | 76.11 грн |
| 29+ | 71.96 грн |
| DSA30C100QB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO3P; tube
Mounting: THT
Case: TO3P
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
Max. off-state voltage: 100V
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 85W; TO3P; tube
Mounting: THT
Case: TO3P
Semiconductor structure: common cathode; double
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
Max. off-state voltage: 100V
Power dissipation: 85W
Kind of package: tube
Type of diode: Schottky rectifying
Load current: 15A x2
на замовлення 254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.15 грн |
| 8+ | 112.79 грн |
| 20+ | 106.56 грн |
| DPG15I200PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 200V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.48 грн |
| 6+ | 68.5 грн |
| 10+ | 60.2 грн |
| 16+ | 51.2 грн |
| 43+ | 48.44 грн |
| DPG15I300PA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15A; tube; Ifsm: 240A; TO220AC; 90W
Mounting: THT
Case: TO220AC
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Max. off-state voltage: 300V
Max. forward voltage: 1.26V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 240A
Power dissipation: 90W
Kind of package: tube
Type of diode: rectifying
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.48 грн |
| 6+ | 68.5 грн |
| 10+ | 60.89 грн |
| 16+ | 51.2 грн |
| 43+ | 48.44 грн |
| DPG15I400PM |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Mounting: THT
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 190A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 190A; TO220FP-2; 35W
Mounting: THT
Power dissipation: 35W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.39V
Load current: 15A
Semiconductor structure: single diode
Reverse recovery time: 45ns
Max. forward impulse current: 190A
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.5 грн |
| 6+ | 65.73 грн |
| 10+ | 57.43 грн |
| 16+ | 51.9 грн |
| 44+ | 48.44 грн |
| DSA80C100PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 40Ax2; 250W; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 490A
Kind of package: tube
Power dissipation: 250W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 40Ax2; 250W; TO220AB; tube
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Max. forward impulse current: 490A
Kind of package: tube
Power dissipation: 250W
Heatsink thickness: 1.14...1.39mm
товар відсутній
| DSS2X41-01A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Max. off-state voltage: 100V
Max. forward voltage: 0.7V
Load current: 40A x2
Semiconductor structure: double independent
Case: SOT227B
Features of semiconductor devices: Schottky
Max. forward impulse current: 0.45kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Max. off-state voltage: 100V
Max. forward voltage: 0.7V
Load current: 40A x2
Semiconductor structure: double independent
Case: SOT227B
Features of semiconductor devices: Schottky
Max. forward impulse current: 0.45kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| IXFN80N50 | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN80N50P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN80N50Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFX200N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFX240N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
товар відсутній
| IXTX200N10L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Case: PLUS247™
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 1.04kW
Drain current: 200A
Features of semiconductor devices: linear power mosfet
Gate charge: 540nC
Drain-source voltage: 100V
Reverse recovery time: 245ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 1040W; PLUS247™; 245ns
Case: PLUS247™
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 1.04kW
Drain current: 200A
Features of semiconductor devices: linear power mosfet
Gate charge: 540nC
Drain-source voltage: 100V
Reverse recovery time: 245ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
| LCC110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC110P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC110PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x2.16mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
на замовлення 166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.22 грн |
| 5+ | 200.66 грн |
| 12+ | 190.28 грн |
| LCC110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 9.65x6.35x3.3mm
Case: DIP8
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 4ms
Turn-off time: 4ms
Insulation voltage: 3.75kV
Contacts configuration: SPDT
Max. operating current: 120mA
товар відсутній
| LCC120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 170mA; max.250VAC; 20Ω
Type of relay: solid state
Contacts configuration: SPDT
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Case: DIP8
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Max. operating current: 0.17A
Turn-off time: 5ms
Turn-on time: 5ms
On-state resistance: 20Ω
Control current max.: 50mA
товар відсутній