| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MCD200-16IO1 | IXYS |
 Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA Case: Y4-M6 Kind of package: bulk Max. off-state voltage: 1.6kV Max. load current: 340A Max. forward voltage: 1.2V Load current: 216A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 8kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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| MCD200-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 216A Case: Y4-M6 Max. forward voltage: 1.2V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: FASTON connectors; screw Max. load current: 340A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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DSEP60-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-2 Max. forward voltage: 1.39V Max. forward impulse current: 600A Power dissipation: 330W Technology: HiPerFRED™ Kind of package: tube |
на замовлення 263 шт: термін постачання 21-30 дні (днів) |
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DSEP60-06AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 60A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: D3PAK Max. forward voltage: 1.39V Max. forward impulse current: 600A Power dissipation: 330W Technology: HiPerFRED™ |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IXBOD1-16RD | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.6kV Kind of package: bulk Features of semiconductor devices: version RD (internal diode) Case: BOD Breakover voltage: 1.6kV Type of thyristor: BOD x2 Mounting: THT Max. load current: 0.2A |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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DSI30-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 300A Max. forward voltage: 1.25V |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
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CPC1973Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.35mA Switched voltage: max. 400V AC Relay variant: 1-phase On-state resistance: 5Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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IXFH36N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.17Ω Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
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IXFR36N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; 156W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 19A Power dissipation: 156W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
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IXFT36N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
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IXTH36N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.17Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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IXTN46N50L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 100A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.16Ω Gate charge: 260nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 0.6µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| MDMA360UC1600TED | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 360A; E2-Pack; Ifsm: 1.9kA Max. forward impulse current: 1.9kA Case: E2-Pack Max. off-state voltage: 1.6kV Load current: 360A Electrical mounting: Press-in PCB Type of module: diode-thyristor Topology: three-phase diode bridge; thyristor |
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DSA20C150PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; 35W; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Power dissipation: 35W Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 220A Max. forward voltage: 0.73V |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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DSA20C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; 45W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Power dissipation: 45W Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 260A Max. forward voltage: 0.61V |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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DSA20C60PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; 35W; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Case: TO220FP Kind of package: tube Max. forward impulse current: 240A Power dissipation: 35W |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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MDD44-08N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 1.15kA Electrical mounting: screw Mechanical mounting: screw |
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MDD44-14N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 1.15kA Electrical mounting: screw Mechanical mounting: screw |
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MDD44-18N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 59A Case: TO240AA Max. forward voltage: 1.26V Max. forward impulse current: 980A Electrical mounting: screw Max. load current: 100A Mechanical mounting: screw |
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IXFR230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™ Mounting: THT Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 358nC Kind of channel: enhanced Case: ISOPLUS247™ Drain-source voltage: 200V Drain current: 156A On-state resistance: 8mΩ |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXTT34N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns Mounting: SMD Case: TO268HV Kind of package: tube Power dissipation: 540W Reverse recovery time: 390ns Drain-source voltage: 650V Drain current: 34A On-state resistance: 96mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 54nC Kind of channel: enhanced |
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CS22-08io1M | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 30/50mA; TO220FP; THT; tube Mounting: THT Max. off-state voltage: 0.8kV Load current: 16A Max. load current: 25A Case: TO220FP Kind of package: tube Max. forward impulse current: 255A Gate current: 30/50mA Type of thyristor: thyristor |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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LDA210 | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 300-30000%@1mA Case: DIP8 Turn-on time: 8µs Turn-off time: 345µs |
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LDA210S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: Darlington Insulation voltage: 3.75kV CTR@If: 300-30000%@1mA Case: SOP8 Turn-on time: 8µs Turn-off time: 345µs |
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LDA210STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Turn-on time: 7µs Turn-off time: 20µs Trigger current: 1A |
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IXTA32P20T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -32A Power dissipation: 300W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 190ns |
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IXTH32P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -32A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 0.13Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 190ns |
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IXTA120P065T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 295 шт: термін постачання 21-30 дні (днів) |
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IXTQ120N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 120A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXTH6N120 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns |
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IXTT6N120 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO268; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 300W Case: TO268 Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns |
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IXTX17N120L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.9Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.83µs |
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IXTP28P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -28A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 45mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 31ns |
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DMA30IM1600PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 30A Semiconductor structure: single diode Case: TO263ABHV Max. forward voltage: 1.26V Max. forward impulse current: 255A Power dissipation: 210W Kind of package: tube |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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IXFH86N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 86A; 860W; TO247-3 Mounting: THT Drain-source voltage: 300V Drain current: 86A On-state resistance: 46mΩ Type of transistor: N-MOSFET Power dissipation: 860W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 143nC Kind of channel: enhanced Case: TO247-3 |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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IXFH94N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 94A Power dissipation: 1.04kW Case: TO247-3 On-state resistance: 36mΩ Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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DPG60C200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W Mounting: THT Max. off-state voltage: 200V Max. forward voltage: 1.34V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 360A Power dissipation: 160W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO247-3 |
на замовлення 299 шт: термін постачання 21-30 дні (днів) |
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DPG60C200QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W Mounting: THT Max. off-state voltage: 200V Max. forward voltage: 1.34V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns Max. forward impulse current: 360A Power dissipation: 160W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO3P |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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IXFB82N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns Drain-source voltage: 600V Drain current: 82A Case: PLUS264™ Polarisation: unipolar On-state resistance: 75mΩ Power dissipation: 1.56kW Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 275nC Reverse recovery time: 300ns Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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DSEP2X60-12A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw Max. off-state voltage: 1.2kV Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 800A Case: SOT227B Max. forward voltage: 1.52V Type of module: diode Mechanical mounting: screw Electrical mounting: screw |
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| MCMA265P1600KA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 260A; Y1; Ufmax: 1.46V Kind of package: bulk Max. off-state voltage: 1.6kV Max. forward voltage: 1.46V Load current: 260A Semiconductor structure: double series Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: Y1 |
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| MDMA380P1600KC | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 380A; Y1-CU; Ufmax: 0.93V Max. off-state voltage: 1.6kV Max. forward voltage: 0.93V Load current: 380A Semiconductor structure: double series Max. forward impulse current: 11kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: Y1-CU |
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IXGH60N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 380W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 54ns Turn-off time: 198ns |
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IXBT42N300HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV Mounting: SMD Case: TO268HV Collector-emitter voltage: 3kV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 200nC Technology: BiMOSFET™ Collector current: 42A Pulsed collector current: 400A Turn-on time: 652ns Turn-off time: 950ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 500W |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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IXGF20N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 3kV Collector current: 14A Power dissipation: 100W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 103A Mounting: THT Gate charge: 31nC Kind of package: tube Turn-on time: 524ns Turn-off time: 355ns Features of semiconductor devices: high voltage |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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MCD162-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCD162-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD162-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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IXTH200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns Case: TO247-3 Mounting: THT On-state resistance: 5.5mΩ Kind of package: tube Power dissipation: 550W Drain current: 200A Features of semiconductor devices: thrench gate power mosfet Gate charge: 152nC Drain-source voltage: 100V Reverse recovery time: 76ns Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXTP200N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns Case: TO220AB Mounting: THT On-state resistance: 4.2mΩ Kind of package: tube Power dissipation: 360W Drain current: 200A Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Drain-source voltage: 55V Reverse recovery time: 49ns Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXTN200N10T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A Technology: TrenchMV™ Case: SOT227B On-state resistance: 5.5mΩ Power dissipation: 550W Drain current: 200A Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 152nC Drain-source voltage: 100V Reverse recovery time: 76ns Kind of channel: enhanced Gate-source voltage: ±30V Semiconductor structure: single transistor Pulsed drain current: 500A Polarisation: unipolar |
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IXXX300N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1.14kA Turn-on time: 137ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 460nC Collector-emitter voltage: 600V |
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IXXX300N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 1075A Turn-on time: 128ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 2.3kW Kind of package: tube Gate charge: 438nC Collector-emitter voltage: 600V |
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DPG80C400HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W Kind of package: tube Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Mounting: THT Case: TO247-3 Max. off-state voltage: 0.4kV Max. forward voltage: 1.43V Load current: 40A x2 Semiconductor structure: common cathode; double Reverse recovery time: 45ns Max. forward impulse current: 0.4kA Power dissipation: 215W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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CLB30I1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube Mounting: THT Load current: 30A Gate current: 50mA Max. forward impulse current: 325A Kind of package: tube Type of thyristor: thyristor Case: TO247AD Max. off-state voltage: 1.2kV Max. load current: 47A |
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CLB30I1200PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube Mounting: SMD Load current: 30A Gate current: 30/50mA Max. forward impulse current: 255A Kind of package: tube Type of thyristor: thyristor Case: TO263ABHV Max. off-state voltage: 1.2kV Max. load current: 47A |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IXFH170N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 170A Power dissipation: 890W Case: TO247-3 On-state resistance: 7.4mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXTR102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 54A On-state resistance: 33mΩ |
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IXTX102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns Case: PLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ |
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DPF60C300HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.4kA Max. off-state voltage: 300V Max. forward voltage: 0.97V Load current: 30A x2 Semiconductor structure: common cathode; double Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Case: TO247-3 |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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| MCD200-16IO1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 340A
Max. forward voltage: 1.2V
Load current: 216A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 340A
Max. forward voltage: 1.2V
Load current: 216A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5295.96 грн |
| MCD200-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 216A
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: FASTON connectors; screw
Max. load current: 340A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 216A
Case: Y4-M6
Max. forward voltage: 1.2V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: FASTON connectors; screw
Max. load current: 340A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| DSEP60-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.39V
Max. forward impulse current: 600A
Power dissipation: 330W
Technology: HiPerFRED™
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 600A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.39V
Max. forward impulse current: 600A
Power dissipation: 330W
Technology: HiPerFRED™
Kind of package: tube
на замовлення 263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 536.92 грн |
| 3+ | 356.92 грн |
| 7+ | 337.29 грн |
| DSEP60-06AT-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D3PAK
Max. forward voltage: 1.39V
Max. forward impulse current: 600A
Power dissipation: 330W
Technology: HiPerFRED™
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 60A; 35ns; D3PAK; Ufmax: 1.39V; 330W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 60A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D3PAK
Max. forward voltage: 1.39V
Max. forward impulse current: 600A
Power dissipation: 330W
Technology: HiPerFRED™
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 468.2 грн |
| 3+ | 312.04 грн |
| 8+ | 294.51 грн |
| IXBOD1-16RD |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.6kV
Kind of package: bulk
Features of semiconductor devices: version RD (internal diode)
Case: BOD
Breakover voltage: 1.6kV
Type of thyristor: BOD x2
Mounting: THT
Max. load current: 0.2A
Category: Thyristors - others
Description: Thyristor: BOD x2; 0.2A; BOD; THT; bulk; 1.6kV
Kind of package: bulk
Features of semiconductor devices: version RD (internal diode)
Case: BOD
Breakover voltage: 1.6kV
Type of thyristor: BOD x2
Mounting: THT
Max. load current: 0.2A
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5419.05 грн |
| DSI30-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 300A
Max. forward voltage: 1.25V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 300A
Max. forward voltage: 1.25V
на замовлення 308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.21 грн |
| 9+ | 95.37 грн |
| 24+ | 90.46 грн |
| 250+ | 88.35 грн |
| CPC1973Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.35mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
On-state resistance: 5Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.35mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
On-state resistance: 5Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.25 грн |
| 4+ | 227.9 грн |
| 10+ | 215.28 грн |
| IXFH36N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR36N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; 156W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 156W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; 156W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 156W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT36N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTH36N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
| IXTN46N50L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.16Ω
Gate charge: 260nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.6µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| MDMA360UC1600TED |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 360A; E2-Pack; Ifsm: 1.9kA
Max. forward impulse current: 1.9kA
Case: E2-Pack
Max. off-state voltage: 1.6kV
Load current: 360A
Electrical mounting: Press-in PCB
Type of module: diode-thyristor
Topology: three-phase diode bridge; thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 360A; E2-Pack; Ifsm: 1.9kA
Max. forward impulse current: 1.9kA
Case: E2-Pack
Max. off-state voltage: 1.6kV
Load current: 360A
Electrical mounting: Press-in PCB
Type of module: diode-thyristor
Topology: three-phase diode bridge; thyristor
товар відсутній
| DSA20C150PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 220A
Max. forward voltage: 0.73V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 220A
Max. forward voltage: 0.73V
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.79 грн |
| DSA20C45PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; 45W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Power dissipation: 45W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 260A
Max. forward voltage: 0.61V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; 45W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Power dissipation: 45W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 260A
Max. forward voltage: 0.61V
на замовлення 367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.13 грн |
| 10+ | 68.02 грн |
| 15+ | 58.2 грн |
| 39+ | 54.7 грн |
| DSA20C60PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 240A
Power dissipation: 35W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 240A
Power dissipation: 35W
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.95 грн |
| 5+ | 86.25 грн |
| 10+ | 76.43 грн |
| 12+ | 68.02 грн |
| 33+ | 64.51 грн |
| MDD44-08N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 800V; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD44-14N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD44-18N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
товар відсутній
| IXFR230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhanced
Case: ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
On-state resistance: 8mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 358nC
Kind of channel: enhanced
Case: ISOPLUS247™
Drain-source voltage: 200V
Drain current: 156A
On-state resistance: 8mΩ
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1343.44 грн |
| 2+ | 1179.46 грн |
| IXTT34N65X2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Mounting: SMD
Case: TO268HV
Kind of package: tube
Power dissipation: 540W
Reverse recovery time: 390ns
Drain-source voltage: 650V
Drain current: 34A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Mounting: SMD
Case: TO268HV
Kind of package: tube
Power dissipation: 540W
Reverse recovery time: 390ns
Drain-source voltage: 650V
Drain current: 34A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Kind of channel: enhanced
товар відсутній
| CS22-08io1M |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 30/50mA; TO220FP; THT; tube
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 16A
Max. load current: 25A
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 255A
Gate current: 30/50mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 30/50mA; TO220FP; THT; tube
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 16A
Max. load current: 25A
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 255A
Gate current: 30/50mA
Type of thyristor: thyristor
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.38 грн |
| 3+ | 168.29 грн |
| 6+ | 142.35 грн |
| 16+ | 134.63 грн |
| LDA210 |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Case: DIP8
Turn-on time: 8µs
Turn-off time: 345µs
товар відсутній
| LDA210S |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Case: SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: Darlington
Insulation voltage: 3.75kV
CTR@If: 300-30000%@1mA
Case: SOP8
Turn-on time: 8µs
Turn-off time: 345µs
товар відсутній
| LDA210STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
товар відсутній
| IXTA32P20T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
товар відсутній
| IXTH32P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
товар відсутній
| IXTA120P065T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 379.85 грн |
| 3+ | 316.95 грн |
| 4+ | 252.44 грн |
| 9+ | 239.12 грн |
| IXTQ120N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 120A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 548.25 грн |
| 3+ | 364.64 грн |
| 7+ | 345 грн |
| IXTH6N120 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
| IXTT6N120 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO268; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO268; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO268
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
товар відсутній
| IXTX17N120L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
товар відсутній
| IXTP28P065T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 31ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 31ns
товар відсутній
| DMA30IM1600PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO263ABHV
Max. forward voltage: 1.26V
Max. forward impulse current: 255A
Power dissipation: 210W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO263ABHV
Max. forward voltage: 1.26V
Max. forward impulse current: 255A
Power dissipation: 210W
Kind of package: tube
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.85 грн |
| 8+ | 115.7 грн |
| 20+ | 109.39 грн |
| IXFH86N30T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 86A; 860W; TO247-3
Mounting: THT
Drain-source voltage: 300V
Drain current: 86A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Power dissipation: 860W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 143nC
Kind of channel: enhanced
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 86A; 860W; TO247-3
Mounting: THT
Drain-source voltage: 300V
Drain current: 86A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
Power dissipation: 860W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 143nC
Kind of channel: enhanced
Case: TO247-3
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 742.33 грн |
| 2+ | 475.43 грн |
| 5+ | 448.78 грн |
| IXFH94N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 94A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 883.54 грн |
| 2+ | 578.51 грн |
| 4+ | 546.95 грн |
| DPG60C200HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
на замовлення 299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 404.77 грн |
| 3+ | 337.99 грн |
| 4+ | 255.95 грн |
| 9+ | 241.92 грн |
| DPG60C200QB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Max. off-state voltage: 200V
Max. forward voltage: 1.34V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 360A
Power dissipation: 160W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO3P
на замовлення 66 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.78 грн |
| 3+ | 217.38 грн |
| 5+ | 164.79 грн |
| 14+ | 155.67 грн |
| IXFB82N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2282.1 грн |
| DSEP2X60-12A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 800A
Case: SOT227B
Max. forward voltage: 1.52V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 800A
Case: SOT227B
Max. forward voltage: 1.52V
Type of module: diode
Mechanical mounting: screw
Electrical mounting: screw
товар відсутній
| MCMA265P1600KA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 260A; Y1; Ufmax: 1.46V
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.46V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 260A; Y1; Ufmax: 1.46V
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.46V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: Y1
товар відсутній
| MDMA380P1600KC |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. off-state voltage: 1.6kV
Max. forward voltage: 0.93V
Load current: 380A
Semiconductor structure: double series
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. off-state voltage: 1.6kV
Max. forward voltage: 0.93V
Load current: 380A
Semiconductor structure: double series
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y1-CU
товар відсутній
| IXGH60N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
товар відсутній
| IXBT42N300HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3294.02 грн |
| IXGF20N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 3kV
Collector current: 14A
Power dissipation: 100W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 103A
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Turn-on time: 524ns
Turn-off time: 355ns
Features of semiconductor devices: high voltage
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2748.79 грн |
| MCD162-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD162-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD162-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXTH200N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Case: TO247-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 550W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Case: TO247-3
Mounting: THT
On-state resistance: 5.5mΩ
Kind of package: tube
Power dissipation: 550W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 579.21 грн |
| 3+ | 366.04 грн |
| 7+ | 345.7 грн |
| IXTP200N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns
Case: TO220AB
Mounting: THT
On-state resistance: 4.2mΩ
Kind of package: tube
Power dissipation: 360W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Drain-source voltage: 55V
Reverse recovery time: 49ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO220AB; 49ns
Case: TO220AB
Mounting: THT
On-state resistance: 4.2mΩ
Kind of package: tube
Power dissipation: 360W
Drain current: 200A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Drain-source voltage: 55V
Reverse recovery time: 49ns
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.53 грн |
| 3+ | 186.53 грн |
| 6+ | 141.65 грн |
| IXTN200N10T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Case: SOT227B
On-state resistance: 5.5mΩ
Power dissipation: 550W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 500A
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Technology: TrenchMV™
Case: SOT227B
On-state resistance: 5.5mΩ
Power dissipation: 550W
Drain current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 152nC
Drain-source voltage: 100V
Reverse recovery time: 76ns
Kind of channel: enhanced
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Pulsed drain current: 500A
Polarisation: unipolar
товар відсутній
| IXXX300N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1.14kA
Turn-on time: 137ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 460nC
Collector-emitter voltage: 600V
товар відсутній
| IXXX300N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 1075A
Turn-on time: 128ns
Turn-off time: 278ns
Type of transistor: IGBT
Power dissipation: 2.3kW
Kind of package: tube
Gate charge: 438nC
Collector-emitter voltage: 600V
товар відсутній
| DPG80C400HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.43V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 0.4kA
Power dissipation: 215W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.43V
Load current: 40A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 45ns
Max. forward impulse current: 0.4kA
Power dissipation: 215W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 348.89 грн |
| 3+ | 291.71 грн |
| 4+ | 228.6 грн |
| CLB30I1200HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Load current: 30A
Gate current: 50mA
Max. forward impulse current: 325A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
Max. off-state voltage: 1.2kV
Max. load current: 47A
товар відсутній
| CLB30I1200PZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Load current: 30A
Gate current: 30/50mA
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Case: TO263ABHV
Max. off-state voltage: 1.2kV
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Load current: 30A
Gate current: 30/50mA
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Case: TO263ABHV
Max. off-state voltage: 1.2kV
Max. load current: 47A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.75 грн |
| 3+ | 183.02 грн |
| 6+ | 138.84 грн |
| 17+ | 131.13 грн |
| IXFH170N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 999.08 грн |
| 3+ | 876.53 грн |
| IXTR102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 54A
On-state resistance: 33mΩ
товар відсутній
| IXTX102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
| DPF60C300HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 300V
Max. forward voltage: 0.97V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO247-3
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.63 грн |
| 3+ | 230.7 грн |
| 5+ | 183.72 грн |
| 13+ | 173.9 грн |