| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BC848CLT1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 6700 шт: термін постачання 21-30 дні (днів) |
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BC848CPDW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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BC848CWT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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SBC848BLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225/0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 150...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 1085 шт: термін постачання 21-30 дні (днів) |
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| FDD5N50FTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.1A Pulsed drain current: 14A Power dissipation: 40W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB5N50CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Power dissipation: 73W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
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| FQU5N50CTU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
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FDB15N50 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FQPF5N50CYDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
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LM431SACMFX | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±2% Mounting: SMD Case: SOT23F Operating temperature: -40...85°C Maximum output current: 0.1A |
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LM431SAIMFX | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±2% Mounting: SMD Case: SOT23F Operating temperature: -25...85°C Maximum output current: 0.1A |
на замовлення 1355 шт: термін постачання 21-30 дні (днів) |
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LM431SBCMFX | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOT23F; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23F Operating temperature: -25...85°C Maximum output current: 0.1A |
на замовлення 405 шт: термін постачання 21-30 дні (днів) |
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LM431SCCMFX | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23F; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23F Operating temperature: -25...85°C Maximum output current: 0.1A |
на замовлення 2720 шт: термін постачання 21-30 дні (днів) |
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| NCP81074AMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
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| NCP81074BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
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| NCP59800BMNADJTBG | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; DFN8 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.5V Output voltage: 0.8...5V Output current: 1A Case: DFN8 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 2 Input voltage: 2.2...6V Manufacturer series: NCP59800 |
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| NCP81075MNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns |
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| NCP81253MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC Type of integrated circuit: driver Case: DFN8 Mounting: SMD Operating temperature: -40...100°C Kind of integrated circuit: gate driver; high-side; low-side Supply voltage: 4.5...5.5V DC |
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NCV7342MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; DFN8; reel,tape Type of integrated circuit: interface Case: DFN8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC |
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NCV7344AMW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; DFN8; reel,tape Type of integrated circuit: interface Case: DFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
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NCV7428MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; system basis chip SBC; 4÷28VDC; SMD; DFN8 Type of integrated circuit: interface Case: DFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Application: automotive industry Integrated circuit features: integrated voltage regulator; LIN transceiver Kind of integrated circuit: system basis chip SBC Supply voltage: 4...28V DC |
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FDMS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8 Case: DFN8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 150V Drain current: 27A On-state resistance: 103mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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FDMS86101DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDMS86200DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDMS86300DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Mounting: SMD Drain-source voltage: 80V Drain current: 110A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN8 |
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NB3L553MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: fanout buffer Number of channels: 1 Mounting: SMD Supply voltage: 2.375...5.25V DC Type of integrated circuit: digital |
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| NRVHP420MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A Mounting: SMD Max. forward impulse current: 40A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 4A Max. forward voltage: 1.1V Load current: 2A Semiconductor structure: double independent Reverse recovery time: 40ns |
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| NRVHP620MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A Semiconductor structure: double independent Reverse recovery time: 25ns |
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| NRVHP620MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A Semiconductor structure: double independent Reverse recovery time: 25ns |
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| NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 8A Max. forward voltage: 1.05V Load current: 4A Semiconductor structure: double independent Reverse recovery time: 50ns |
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| NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 8A Max. forward voltage: 1.05V Load current: 4A Semiconductor structure: double independent Reverse recovery time: 50ns |
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NVMFD5C462NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 25W Dimensions: 5x6mm Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 52A On-state resistance: 4.7mΩ Polarisation: unipolar Kind of channel: enhanced |
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MC100LVELT23MNRG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Mounting: SMD Number of channels: 2 Case: DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Manufacturer series: 100LVELT Number of inputs: 4 Number of outputs: 2 |
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| NCP5901BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
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| NCP5901MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
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| NCP81145MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C |
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| NCP81146MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -40...125°C |
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| NCP81258MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Mounting: SMD Case: DFN8 Operating temperature: -10...125°C Kind of integrated circuit: gate driver; high-side; low-side Supply voltage: 4.5...13.2V DC Topology: buck |
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NCV51190MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V Output voltage: 0.675...1.35V Application: automotive industry; for DDR memories Number of channels: 1 Output current: 1.5A Mounting: SMD Type of integrated circuit: PMIC Operating voltage: 1.35...2.5/2.2...5.5V Case: DFN8 Operating temperature: -40...125°C Kind of integrated circuit: DDR memory termination regulator |
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| FDMS7650DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 206nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS8320LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 125W Pulsed drain current: 300A Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 192A On-state resistance: 1.7mΩ Gate charge: 170nC Polarisation: unipolar Kind of channel: enhanced |
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -65A Power dissipation: 107W Case: DFN8 Gate-source voltage: ±16V On-state resistance: 13mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| NCP45520IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: DFN8 Kind of package: reel; tape Kind of integrated circuit: high-side Output current: 10.5A Control voltage: 0.5...13.5V DC Supply voltage: 3...5.5V DC On-state resistance: 22.5mΩ Active logical level: low Kind of output: N-Channel |
на замовлення 2920 шт: термін постачання 21-30 дні (днів) |
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| NCP45522IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Kind of package: reel; tape Active logical level: high Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ Mounting: SMD Supply voltage: 3...5.5V DC |
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| NCP45523IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: DFN8 Kind of package: reel; tape Kind of integrated circuit: high-side Output current: 6A Control voltage: 0.5...13.5V DC Supply voltage: 3...5.5V DC On-state resistance: 31.7mΩ Active logical level: high Kind of output: N-Channel |
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| NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Kind of package: reel; tape On-state resistance: 31.7mΩ Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
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| NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Kind of package: reel; tape On-state resistance: 31.7mΩ Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: low Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
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| NCP45610IMNTWG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Kind of package: reel; tape Active logical level: high Control voltage: 1...13.5V DC Output current: 8A Type of integrated circuit: power switch Kind of output: N-Channel Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 21mΩ Mounting: SMD Supply voltage: 3...5.5V DC |
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| NCP81080MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8 Case: DFN8 Topology: MOSFET half-bridge Operating temperature: -40...140°C Mounting: SMD Supply voltage: 5.5...20V DC Output current: -800...500mA Type of integrated circuit: driver Impulse rise time: 19ns Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side |
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MC100EPT21MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2 Operating temperature: -40...85°C Manufacturer series: 100EPT Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: DFN8 Number of inputs: 2 Number of outputs: 1 Supply voltage: 3...3.6V DC |
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FDL100N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264 Mounting: THT Power dissipation: 2.5kW Polarisation: unipolar Kind of package: tube Gate charge: 238nC Technology: UniFET™ Kind of channel: enhanced Gate-source voltage: ±30V Case: TO264 Drain-source voltage: 500V Drain current: 100A On-state resistance: 55mΩ Type of transistor: N-MOSFET |
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| NV25256DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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| NV25256DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
товар відсутній |
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| NV25256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
товар відсутній |
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| CAT25256HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 256kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 40ns |
товар відсутній |
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| CAT25256VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
товар відсутній |
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| CAT25256XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
товар відсутній |
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| CAT25256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
товар відсутній |
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| CAV25256VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
товар відсутній |
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| CAV25256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
товар відсутній |
| BC848CLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 6700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 6.97 грн |
| 77+ | 4.67 грн |
| 148+ | 2.44 грн |
| 500+ | 1.59 грн |
| 790+ | 1.07 грн |
| 2174+ | 1.01 грн |
| BC848CPDW1T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.16 грн |
| 43+ | 8.55 грн |
| 100+ | 4.01 грн |
| 388+ | 2.18 грн |
| 1067+ | 2.06 грн |
| BC848CWT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.3W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товар відсутній
| SBC848BLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 150...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 150...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 1085 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.66 грн |
| 180+ | 2.01 грн |
| 500+ | 1.81 грн |
| 610+ | 1.39 грн |
| FDD5N50FTM-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 14A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 14A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQB5N50CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 73W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 73W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQU5N50CTU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDB15N50 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQPF5N50CYDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| LM431SACMFX |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...85°C
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...85°C
Maximum output current: 0.1A
товар відсутній
| LM431SAIMFX |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±2%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±2%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Maximum output current: 0.1A
на замовлення 1355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.42 грн |
| 20+ | 18.26 грн |
| 92+ | 9.2 грн |
| 252+ | 8.7 грн |
| LM431SBCMFX |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Maximum output current: 0.1A
на замовлення 405 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.46 грн |
| 45+ | 8.2 грн |
| 100+ | 6.47 грн |
| 145+ | 5.89 грн |
| 400+ | 5.54 грн |
| LM431SCCMFX |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23F; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -25...85°C
Maximum output current: 0.1A
на замовлення 2720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.94 грн |
| 45+ | 8.2 грн |
| 100+ | 6.47 грн |
| 150+ | 5.61 грн |
| 415+ | 5.32 грн |
| NCP81074AMNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
товар відсутній
| NCP81074BMNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
товар відсутній
| NCP59800BMNADJTBG |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 0.8...5V
Output current: 1A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 2
Input voltage: 2.2...6V
Manufacturer series: NCP59800
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 0.8...5V
Output current: 1A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 2
Input voltage: 2.2...6V
Manufacturer series: NCP59800
товар відсутній
| NCP81075MNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
товар відсутній
| NCP81253MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Case: DFN8
Mounting: SMD
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...5.5V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Case: DFN8
Mounting: SMD
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...5.5V DC
товар відсутній
| NCV7342MW3R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; DFN8; reel,tape
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; DFN8; reel,tape
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
товар відсутній
| NCV7344AMW0R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; DFN8; reel,tape
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; DFN8; reel,tape
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
товар відсутній
| NCV7428MW3R2G |
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; SMD; DFN8
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Integrated circuit features: integrated voltage regulator; LIN transceiver
Kind of integrated circuit: system basis chip SBC
Supply voltage: 4...28V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; SMD; DFN8
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Integrated circuit features: integrated voltage regulator; LIN transceiver
Kind of integrated circuit: system basis chip SBC
Supply voltage: 4...28V DC
товар відсутній
| FDMS2572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| FDMS86101DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS86200DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS86300DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 110A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Mounting: SMD
Drain-source voltage: 80V
Drain current: 110A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN8
товар відсутній
| NB3L553MNR4G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
товар відсутній
| NRVHP420MFDT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Max. forward impulse current: 40A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
Semiconductor structure: double independent
Reverse recovery time: 40ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Max. forward impulse current: 40A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
Semiconductor structure: double independent
Reverse recovery time: 40ns
товар відсутній
| NRVHP620MFDT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
товар відсутній
| NRVHP620MFDT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
товар відсутній
| NRVHP820MFDT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
товар відсутній
| NRVHP820MFDT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
товар відсутній
| NVMFD5C462NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| MC100LVELT23MNRG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Manufacturer series: 100LVELT
Number of inputs: 4
Number of outputs: 2
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Manufacturer series: 100LVELT
Number of inputs: 4
Number of outputs: 2
товар відсутній
| NCP5901BMNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товар відсутній
| NCP5901MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
товар відсутній
| NCP81145MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
товар відсутній
| NCP81146MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
товар відсутній
| NCP81258MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...13.2V DC
Topology: buck
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...13.2V DC
Topology: buck
товар відсутній
| NCV51190MNTAG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Output voltage: 0.675...1.35V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 1.5A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 1.35...2.5/2.2...5.5V
Case: DFN8
Operating temperature: -40...125°C
Kind of integrated circuit: DDR memory termination regulator
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Output voltage: 0.675...1.35V
Application: automotive industry; for DDR memories
Number of channels: 1
Output current: 1.5A
Mounting: SMD
Type of integrated circuit: PMIC
Operating voltage: 1.35...2.5/2.2...5.5V
Case: DFN8
Operating temperature: -40...125°C
Kind of integrated circuit: DDR memory termination regulator
товар відсутній
| FDMS7650DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMS8320LDC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 125W
Pulsed drain current: 300A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 192A
On-state resistance: 1.7mΩ
Gate charge: 170nC
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 125W
Pulsed drain current: 300A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 192A
On-state resistance: 1.7mΩ
Gate charge: 170nC
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| FDWS9509L-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| NCP45520IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 10.5A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 22.5mΩ
Active logical level: low
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 10.5A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 22.5mΩ
Active logical level: low
Kind of output: N-Channel
на замовлення 2920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.08 грн |
| 14+ | 57.45 грн |
| 38+ | 54.31 грн |
| NCP45522IMNTWG-H |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
товар відсутній
| NCP45523IMNTWG-H |
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 6A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Active logical level: high
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 6A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Active logical level: high
Kind of output: N-Channel
товар відсутній
| NCP45524IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
товар відсутній
| NCP45524IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
товар відсутній
| NCP45610IMNTWG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 1...13.5V DC
Output current: 8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 21mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 1...13.5V DC
Output current: 8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 21mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
товар відсутній
| NCP81080MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Case: DFN8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Case: DFN8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
товар відсутній
| MC100EPT21MNR4G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: DFN8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: DFN8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
товар відсутній
| FDL100N50F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Mounting: THT
Power dissipation: 2.5kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 238nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Mounting: THT
Power dissipation: 2.5kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 238nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
товар відсутній
| NV25256DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| NV25256DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| NV25256MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25256HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 256kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 256kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
товар відсутній
| CAT25256VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25256XI-T2 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT25256YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAV25256VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| CAV25256YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній