| Фото | Назва | Виробник | Інформація |
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| FDMS3672 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 30A Power dissipation: 78W Case: Power56 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
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| CAT24C04C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C04WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAT24C04YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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FQP11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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FQP13N06L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.6A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhanced |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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FQP13N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.05A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhanced |
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FQP14N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 9.1A Pulsed drain current: 57.6A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 290mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
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FQP15P12 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Drain current: -10.6A Pulsed drain current: -60A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 200mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
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FQP16N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 10A Pulsed drain current: 64A Power dissipation: 142W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
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NCP81071ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
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| NCP81071AMNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
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| NCP81071AZR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
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NCP81071BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
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| NCP81071BMNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: non-inverting |
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| NCP81071BZR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: non-inverting |
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NCP81071CDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
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| NCP81071CMNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
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| NCP81071CZR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
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NLVHC259ADR2G | ONSEMI |
Category: Latches Description: IC: digital; 1 to 8 line,8bit,decoder,latch; Ch: 1; IN: 6; CMOS Type of integrated circuit: digital Kind of integrated circuit: 1 to 8 line; 8bit; decoder; latch Number of channels: 1 Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: VHC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC |
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| NLX1G74MUTCG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Number of inputs: 4 Technology: CMOS Manufacturer series: MiniGate Mounting: SMD Case: UQFN8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NLX |
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| NLVX1G74MUTCG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: UQFN8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Quiescent current: 10µA |
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MC14007UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: complementary pair Kind of gate: combination; NOT Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 30µA |
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MC14007UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: complementary pair Kind of gate: combination; NOT Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 30µA |
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MC79M15CDTRKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
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| BAT54CXV3T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SC89; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Case: SC89 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.24W |
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SBAT54CTT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SC70; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Case: SC70 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.225W |
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MBR160G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; bulk; Ufmax: 0.75V Kind of package: bulk Max. off-state voltage: 60V Max. forward voltage: 0.75V Load current: 1A Semiconductor structure: single diode Type of diode: Schottky rectifying Mounting: THT Case: DO41 |
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| CAT93C46BHU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: Microwire Memory organisation: 128x8/64x16bit Clock frequency: 4MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAT93C46BVI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: Microwire Memory organisation: 128x8/64x16bit Clock frequency: 4MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| CAT93C46BYI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: Microwire Memory organisation: 128x8/64x16bit Clock frequency: 4MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
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| NCP133AMX090TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD Manufacturer series: NCP133 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Output voltage: 0.9V Output current: 0.5A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 0.8...5.5V Kind of voltage regulator: fixed; LDO; linear Case: XDFN6 Tolerance: ±1.5% |
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| NCP133AMX105TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 500mA; XDFN6; SMD Manufacturer series: NCP133 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Output voltage: 1.05V Output current: 0.5A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 0.8...5.5V Kind of voltage regulator: fixed; LDO; linear Case: XDFN6 Tolerance: ±1.5% |
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| NCP133AMX115TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 500mA; XDFN6; SMD Manufacturer series: NCP133 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Output voltage: 1.15V Output current: 0.5A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 0.8...5.5V Kind of voltage regulator: fixed; LDO; linear Case: XDFN6 Tolerance: ±1.5% |
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| NCP133AMX120TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN6; SMD Manufacturer series: NCP133 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Output voltage: 1.2V Output current: 0.5A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 0.8...5.5V Kind of voltage regulator: fixed; LDO; linear Case: XDFN6 Tolerance: ±1.5% |
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| NCP133AMXADJTCG | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA Manufacturer series: NCP133 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Output voltage: 0.8...3.6V Output current: 0.5A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Input voltage: 0.8...5.5V Kind of voltage regulator: adjustable; LDO; linear Case: XDFN6 Tolerance: ±1.5% |
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| NCP3133AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 2.9÷5.5V; QFN16 3x3; buck Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.9...5.5V Topology: buck Case: QFN16 3x3 Frequency: 0.99...1.21MHz |
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| FDH3632 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.8A Power dissipation: 310W Case: TO247 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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| FDP7030BL | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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2SA2012-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Mounting: SMD Case: SOT89 Polarisation: bipolar Power dissipation: 3.5W Type of transistor: PNP Kind of package: reel; tape Collector current: 5A Current gain: 200...560 Collector-emitter voltage: 30V Frequency: 350MHz |
на замовлення 884 шт: термін постачання 21-30 дні (днів) |
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2SA2013-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 4A; 3.5W; SOT89 Mounting: SMD Case: SOT89 Polarisation: bipolar Power dissipation: 3.5W Type of transistor: PNP Kind of package: reel; tape Collector current: 4A Current gain: 200...560 Collector-emitter voltage: 50V Frequency: 360MHz |
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2SA2016-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 7A; 3.5W; SOT89 Mounting: SMD Case: SOT89 Polarisation: bipolar Power dissipation: 3.5W Type of transistor: PNP Kind of package: reel; tape Collector current: 7A Current gain: 200...560 Collector-emitter voltage: 50V Frequency: 290MHz |
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2SA2153-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 3.5W; SOT89 Mounting: SMD Case: SOT89 Polarisation: bipolar Power dissipation: 3.5W Type of transistor: PNP Kind of package: reel; tape Collector current: 2A Current gain: 40...560 Collector-emitter voltage: 50V Frequency: 420MHz |
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2SA2202-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 3.5W; SOT89 Mounting: SMD Case: SOT89 Polarisation: bipolar Power dissipation: 3.5W Type of transistor: PNP Kind of package: reel; tape Collector current: 2A Current gain: 200...400 Collector-emitter voltage: 100V Frequency: 300MHz |
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2SC5964-TD-H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 3.5W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 380MHz |
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2SB1123S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
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2SB1123T-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
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| RSL10-002GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; GPIO,I2C,SPI,UART; Bluetooth board Type of development kit: evaluation Kind of connector: pin strips; pin strips; Pmod socket; USB micro Interface: GPIO; I2C; SPI; UART Programmers and development kits features: Bluetooth board Kit contents: prototype board Components: RSL10 |
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74VHC123AM | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of integrated circuit: monostable; multivibrator Case: SO16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
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74VHC123AMTC | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of package: tube Kind of integrated circuit: monostable; multivibrator Case: TSSOP16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 Quiescent current: 40µA |
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74VHC123AMTCX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of integrated circuit: monostable; multivibrator Case: TSSOP16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
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74VHC123AMX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of integrated circuit: monostable; multivibrator Case: SO16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
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| NLAS3157MX3TCG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V |
товар відсутній |
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| NLASB3157MTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT Type of integrated circuit: analog switch Number of channels: 1 Case: WDFN6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: SPDT Quiescent current: 10µA Technology: CMOS |
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NC7SBU3157P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SC70 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT Quiescent current: 10µA Technology: CMOS |
товар відсутній |
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NLVASB3157DFT2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SC88A Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -55...125°C Kind of output: SPDT Application: automotive industry |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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NTR4003NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.56A Power dissipation: 0.69W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.15nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2532 шт: термін постачання 21-30 дні (днів) |
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MM5Z12VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: reel; tape Case: SOD523 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
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M74VHC1GT125DF1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
товар відсутній |
| FDMS3672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CAT24C04C4ATR |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C04WI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAT24C04YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| FQP11N40C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.55 грн |
| 10+ | 80.96 грн |
| 28+ | 76.11 грн |
| FQP13N06L |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.6A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.6A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9.6A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.49 грн |
| FQP13N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.05A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.05A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.05A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQP14N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQP15P12 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FQP16N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NCP81071ADR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
товар відсутній
| NCP81071AMNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
товар відсутній
| NCP81071AZR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
товар відсутній
| NCP81071BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
товар відсутній
| NCP81071BMNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
товар відсутній
| NCP81071BZR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
товар відсутній
| NCP81071CDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
товар відсутній
| NCP81071CMNTXG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
товар відсутній
| NCP81071CZR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
товар відсутній
| NLVHC259ADR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 1 to 8 line,8bit,decoder,latch; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1 to 8 line; 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Category: Latches
Description: IC: digital; 1 to 8 line,8bit,decoder,latch; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1 to 8 line; 8bit; decoder; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
товар відсутній
| NLX1G74MUTCG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Manufacturer series: MiniGate
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NLX
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 4; CMOS; MiniGate; SMD; UQFN8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Manufacturer series: MiniGate
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NLX
товар відсутній
| NLVX1G74MUTCG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 10µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; UQFN8; reel,tape; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: UQFN8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Quiescent current: 10µA
товар відсутній
| MC14007UBDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
товар відсутній
| MC14007UBDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
товар відсутній
| MC79M15CDTRKG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
товар відсутній
| BAT54CXV3T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SC89; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SC89
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.24W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SC89; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SC89
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.24W
товар відсутній
| SBAT54CTT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SC70; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SC70
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SC70; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SC70
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
товар відсутній
| MBR160G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; bulk; Ufmax: 0.75V
Kind of package: bulk
Max. off-state voltage: 60V
Max. forward voltage: 0.75V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; bulk; Ufmax: 0.75V
Kind of package: bulk
Max. off-state voltage: 60V
Max. forward voltage: 0.75V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
товар відсутній
| CAT93C46BHU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT93C46BVI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| CAT93C46BYI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
товар відсутній
| NCP133AMX090TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 0.9V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 0.9V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
товар відсутній
| NCP133AMX105TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 1.05V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 1.05V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
товар відсутній
| NCP133AMX115TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 1.15V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.15V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 1.15V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
товар відсутній
| NCP133AMX120TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 1.2V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 500mA; XDFN6; SMD
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 1.2V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
товар відсутній
| NCP133AMXADJTCG |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 0.8...3.6V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA
Manufacturer series: NCP133
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output voltage: 0.8...3.6V
Output current: 0.5A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Input voltage: 0.8...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Case: XDFN6
Tolerance: ±1.5%
товар відсутній
| NCP3133AMNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.9÷5.5V; QFN16 3x3; buck
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.9...5.5V
Topology: buck
Case: QFN16 3x3
Frequency: 0.99...1.21MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.9÷5.5V; QFN16 3x3; buck
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.9...5.5V
Topology: buck
Case: QFN16 3x3
Frequency: 0.99...1.21MHz
товар відсутній
| FDH3632 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDP7030BL |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 2SA2012-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 5A
Current gain: 200...560
Collector-emitter voltage: 30V
Frequency: 350MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 5A
Current gain: 200...560
Collector-emitter voltage: 30V
Frequency: 350MHz
на замовлення 884 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 47.91 грн |
| 25+ | 29.89 грн |
| 35+ | 22.97 грн |
| 96+ | 21.66 грн |
| 2SA2013-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 4A
Current gain: 200...560
Collector-emitter voltage: 50V
Frequency: 360MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 4A
Current gain: 200...560
Collector-emitter voltage: 50V
Frequency: 360MHz
товар відсутній
| 2SA2016-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 7A
Current gain: 200...560
Collector-emitter voltage: 50V
Frequency: 290MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 7A
Current gain: 200...560
Collector-emitter voltage: 50V
Frequency: 290MHz
товар відсутній
| 2SA2153-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 40...560
Collector-emitter voltage: 50V
Frequency: 420MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 40...560
Collector-emitter voltage: 50V
Frequency: 420MHz
товар відсутній
| 2SA2202-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 200...400
Collector-emitter voltage: 100V
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 3.5W; SOT89
Mounting: SMD
Case: SOT89
Polarisation: bipolar
Power dissipation: 3.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 200...400
Collector-emitter voltage: 100V
Frequency: 300MHz
товар відсутній
| 2SC5964-TD-H |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
товар відсутній
| 2SB1123S-TD-E |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товар відсутній
| 2SB1123T-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
товар відсутній
| RSL10-002GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; GPIO,I2C,SPI,UART; Bluetooth board
Type of development kit: evaluation
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Interface: GPIO; I2C; SPI; UART
Programmers and development kits features: Bluetooth board
Kit contents: prototype board
Components: RSL10
Category: Development kits - others
Description: Dev.kit: evaluation; GPIO,I2C,SPI,UART; Bluetooth board
Type of development kit: evaluation
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Interface: GPIO; I2C; SPI; UART
Programmers and development kits features: Bluetooth board
Kit contents: prototype board
Components: RSL10
товар відсутній
| 74VHC123AM |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
товар відсутній
| 74VHC123AMTC |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of package: tube
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Quiescent current: 40µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of package: tube
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Quiescent current: 40µA
товар відсутній
| 74VHC123AMTCX |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
товар відсутній
| 74VHC123AMX |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
товар відсутній
| NLAS3157MX3TCG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
товар відсутній
| NTJS3157NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
товар відсутній
| NLASB3157MTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
товар відсутній
| NC7SBU3157P6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
товар відсутній
| NLVASB3157DFT2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.64 грн |
| 25+ | 16.81 грн |
| 59+ | 13.59 грн |
| 162+ | 12.85 грн |
| NTR4003NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2532 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.17 грн |
| 100+ | 3.48 грн |
| 300+ | 2.66 грн |
| 825+ | 2.52 грн |
| MM5Z12VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| M74VHC1GT125DF1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
товар відсутній