| Фото | Назва | Виробник | Інформація |
Доступність |
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NCV1117DT33T5G | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.25...20V Manufacturer series: NCV1117 |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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NCV1117DTARKG | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.2V Output voltage: 1.5...12V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Application: automotive industry Input voltage: 1.25...20V Manufacturer series: NCV1117 |
на замовлення 1409 шт: термін постачання 21-30 дні (днів) |
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MC74AC161DG | ONSEMI |
Category: Counters/dividers Description: IC: digital; 4bit,binary counter; AC; SMD; SO16; 2÷6VDC; -40÷85°C Operating temperature: -40...85°C Manufacturer series: AC Type of integrated circuit: digital Case: SO16 Kind of integrated circuit: 4bit; binary counter Mounting: SMD Supply voltage: 2...6V DC |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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MC14069UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Technology: CMOS Number of channels: hex; 6 Number of inputs: 1 Kind of package: tube Delay time: 100ns Kind of gate: NOT Family: HEF4000B |
на замовлення 202 шт: термін постачання 21-30 дні (днів) |
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M74VHC1G125DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
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M74VHC1G135DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; VHC; 2÷5.5VDC; 40uA Technology: CMOS Case: SC88A Mounting: SMD Kind of package: reel; tape Manufacturer series: VHC Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of input: with Schmitt trigger Number of inputs: 2 Number of channels: single; 1 Kind of gate: NAND Type of integrated circuit: digital Kind of output: open drain |
на замовлення 2831 шт: термін постачання 21-30 дні (днів) |
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| NLVVHC1G125DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA Application: automotive industry |
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M1MA142WAT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.15A; 10ns; SOT323; Ufmax: 1.2V; 150mW Type of diode: switching Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.2V Case: SOT323 Max. load current: 340mA Semiconductor structure: common anode; double Max. off-state voltage: 80V Load current: 0.15A Reverse recovery time: 10ns Max. forward impulse current: 0.75A |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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MSB92WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.15W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.15W Case: SOT323 Current gain: 25 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
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2N7002WT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Power dissipation: 0.33W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 1.19Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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2V7002WT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.4A Power dissipation: 0.28W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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FZT790A | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2805 шт: термін постачання 21-30 дні (днів) |
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FDT3N40TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3446T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.1A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| NTGS3455T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; 2W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS6930A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 5.5A On-state resistance: 68mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
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FQT5P10TF | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223 Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -800mA Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
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NTMD6N02R2G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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NTMD6P02R2G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| NTD5C668NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 250A; 2W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 250A Power dissipation: 2W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced |
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| N84C162WD25TG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial Type of integrated circuit: EEPROM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Access time: 1000ns Kind of package: reel; tape Interface: I2C Kind of memory: EEPROM Kind of interface: serial Memory capacity: 16kb Clock frequency: 400kHz Operating voltage: 2.7...6V Memory organisation: 2kx8bit |
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| N84C162WD45TG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial Type of integrated circuit: EEPROM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Access time: 1000ns Kind of package: reel; tape Interface: I2C Kind of memory: EEPROM Kind of interface: serial Memory capacity: 16kb Clock frequency: 400kHz Operating voltage: 2.7...6V Memory organisation: 2kx8bit |
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| CAT24C32WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
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| CAV24C02WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 256x8bit; 2.5÷5.5V; 400kHz; SOIC8; serial Type of integrated circuit: EEPROM memory Interface: I2C Case: SOIC8 Mounting: SMD Kind of memory: EEPROM Operating temperature: -40...125°C Kind of package: reel; tape Access time: 900ns Kind of interface: serial Memory capacity: 2kb Clock frequency: 400kHz Operating voltage: 2.5...5.5V Memory organisation: 256x8bit |
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| CAV24C32WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
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FQS4901TF | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.45A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS6898A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2494 шт: термін постачання 21-30 дні (днів) |
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FDS8949 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 426 шт: термін постачання 21-30 дні (днів) |
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FDS8958B | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6.4/-4.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20/±25V On-state resistance: 39/72mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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fds9945 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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NDS9945 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 0.3Ω Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 30nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V |
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NDS9952A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.7/-2.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 130/210mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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SI4542DY | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6/-6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±30V On-state resistance: 48/51mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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FDS3890 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 4.7A; Idm: 20A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 4.7A Pulsed drain current: 20A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 82mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
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FDS9933A | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; Idm: -20A; 2W; SO8 Mounting: SMD Case: SO8 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.12Ω Type of transistor: P-MOSFET x2 |
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FDS4897C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 6.2/-4.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43/73mΩ Mounting: SMD Gate charge: 20/28nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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FDS9934C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 6.5/-5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12/±10V On-state resistance: 50/90mΩ Mounting: SMD Gate charge: 9/12nC Kind of package: reel; tape Kind of channel: enhanced |
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FODM8071 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs Mounting: SMD Turn-on time: 5.8ns Turn-off time: 5.3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV Transfer rate: 20Mbps Slew rate: 40kV/μs Type of optocoupler: optocoupler Case: Mini-flat 5pin |
на замовлення 2045 шт: термін постачання 21-30 дні (днів) |
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FODM8071R2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; 20Mbps; Mini-flat 5pin Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Transfer rate: 20Mbps Case: Mini-flat 5pin Turn-on time: 5.8ns Turn-off time: 5.8ns Slew rate: 40kV/μs |
на замовлення 1719 шт: термін постачання 21-30 дні (днів) |
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BU406G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 7A Power dissipation: 60W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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SBC817-16LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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NSVBC817-16LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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HGTG11N120CND | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 22A; 298W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 22A Power dissipation: 298W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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TIP29AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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TIP29BG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 30W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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TIP29CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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TIP30CG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 1A; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MC14051BDTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS Operating temperature: -55...125°C Type of integrated circuit: analog switch Number of channels: 1 Quiescent current: 600µA Kind of output: SP8T Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Mounting: SMD Case: TSSOP16 Supply voltage: 3...18V DC |
на замовлення 2337 шт: термін постачання 21-30 дні (днів) |
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RHRG5060 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 500A; TO247-2; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 50A Max. load current: 100A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 Max. forward voltage: 2.1V Power dissipation: 125W Reverse recovery time: 50ns |
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2SC5566-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 3.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 3.5W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
на замовлення 214 шт: термін постачання 21-30 дні (днів) |
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2SC5569-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 7A; 3.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 7A Power dissipation: 3.5W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 330MHz |
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MC14051BDG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; CMOS; SMD Operating temperature: -55...125°C Type of integrated circuit: analog switch Number of channels: 1 Quiescent current: 600µA Kind of output: SP8T Kind of package: tube Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Mounting: SMD Case: SO16 Supply voltage: 3...18V DC |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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MC14051BDR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC Operating temperature: -40...85°C Type of integrated circuit: analog switch Number of channels: 1 Quiescent current: 600µA Kind of output: SP8T Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Mounting: SMD Case: SO16 Supply voltage: 3...18V DC |
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| FPF1039UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Operating temperature: -40...85°C Case: WLCSP6 Supply voltage: 1.2...5.5V DC On-state resistance: 75mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Integrated circuit features: ESD-protected; output discharge Kind of package: reel; tape Mounting: SMD |
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FDPF390N15A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 150V Drain current: 10A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 22W Polarisation: unipolar Gate charge: 18.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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FDPF39N20 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 200V Drain current: 23.4A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 37W Polarisation: unipolar Gate charge: 49nC Technology: UniFET™ Kind of channel: enhanced Gate-source voltage: ±30V |
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D44VH10G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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MC78L05ACDR2G | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V Manufacturer series: MC78L00A |
на замовлення 830 шт: термін постачання 21-30 дні (днів) |
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MC78L08ABDR2G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 8V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 10.5...23V Manufacturer series: MC78L00A |
на замовлення 2354 шт: термін постачання 21-30 дні (днів) |
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MC78L08ABPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; TO92; THT; bulk; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 8V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 10.5...23V Manufacturer series: MC78L00A |
на замовлення 1897 шт: термін постачання 21-30 дні (днів) |
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| NCV1117DT33T5G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
Manufacturer series: NCV1117
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
Manufacturer series: NCV1117
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 45.68 грн |
| 10+ | 38.03 грн |
| NCV1117DTARKG |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
Manufacturer series: NCV1117
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
Manufacturer series: NCV1117
на замовлення 1409 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 33.5 грн |
| 25+ | 29.33 грн |
| 33+ | 25.66 грн |
| 91+ | 24.3 грн |
| 100+ | 23.36 грн |
| MC74AC161DG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter; AC; SMD; SO16; 2÷6VDC; -40÷85°C
Operating temperature: -40...85°C
Manufacturer series: AC
Type of integrated circuit: digital
Case: SO16
Kind of integrated circuit: 4bit; binary counter
Mounting: SMD
Supply voltage: 2...6V DC
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter; AC; SMD; SO16; 2÷6VDC; -40÷85°C
Operating temperature: -40...85°C
Manufacturer series: AC
Type of integrated circuit: digital
Case: SO16
Kind of integrated circuit: 4bit; binary counter
Mounting: SMD
Supply voltage: 2...6V DC
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.19 грн |
| 10+ | 39.54 грн |
| 25+ | 32.35 грн |
| 33+ | 25.19 грн |
| MC14069UBDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of channels: hex; 6
Number of inputs: 1
Kind of package: tube
Delay time: 100ns
Kind of gate: NOT
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Technology: CMOS
Number of channels: hex; 6
Number of inputs: 1
Kind of package: tube
Delay time: 100ns
Kind of gate: NOT
Family: HEF4000B
на замовлення 202 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.72 грн |
| 12+ | 32.21 грн |
| 34+ | 24.87 грн |
| 94+ | 23.51 грн |
| M74VHC1G125DFT2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
товар відсутній
| M74VHC1G135DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; VHC; 2÷5.5VDC; 40uA
Technology: CMOS
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Number of channels: single; 1
Kind of gate: NAND
Type of integrated circuit: digital
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; VHC; 2÷5.5VDC; 40uA
Technology: CMOS
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Number of channels: single; 1
Kind of gate: NAND
Type of integrated circuit: digital
Kind of output: open drain
на замовлення 2831 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 66+ | 5.92 грн |
| 71+ | 5.09 грн |
| 100+ | 4.08 грн |
| 288+ | 2.8 грн |
| 790+ | 2.65 грн |
| NLVVHC1G125DFT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Application: automotive industry
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Application: automotive industry
товар відсутній
| M1MA142WAT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.15A; 10ns; SOT323; Ufmax: 1.2V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.2V
Case: SOT323
Max. load current: 340mA
Semiconductor structure: common anode; double
Max. off-state voltage: 80V
Load current: 0.15A
Reverse recovery time: 10ns
Max. forward impulse current: 0.75A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.15A; 10ns; SOT323; Ufmax: 1.2V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.2V
Case: SOT323
Max. load current: 340mA
Semiconductor structure: common anode; double
Max. off-state voltage: 80V
Load current: 0.15A
Reverse recovery time: 10ns
Max. forward impulse current: 0.75A
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.49 грн |
| 210+ | 1.75 грн |
| MSB92WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.15W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT323
Current gain: 25
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.15W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT323
Current gain: 25
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товар відсутній
| 2N7002WT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.19Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.34A; 0.33W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Power dissipation: 0.33W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.19Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 392 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.71 грн |
| 41+ | 8.77 грн |
| 100+ | 3.82 грн |
| 200+ | 3.26 грн |
| 2V7002WT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 0.28W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 0.28W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| FZT790A |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2805 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.26 грн |
| 25+ | 32.92 грн |
| 33+ | 24.23 грн |
| 89+ | 22.9 грн |
| FDT3N40TF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3446T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTGS3455T1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; 2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6930A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 5.5A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.5A; 2W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 5.5A
On-state resistance: 68mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
товар відсутній
| FQT5P10TF |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -800mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -800mA
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTMD6N02R2G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTMD6P02R2G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NTD5C668NLT4G |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 250A; 2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 250A
Power dissipation: 2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 250A; 2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 250A
Power dissipation: 2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| N84C162WD25TG |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
товар відсутній
| N84C162WD45TG |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
товар відсутній
| CAT24C32WI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
товар відсутній
| CAV24C02WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 256x8bit; 2.5÷5.5V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Interface: I2C
Case: SOIC8
Mounting: SMD
Kind of memory: EEPROM
Operating temperature: -40...125°C
Kind of package: reel; tape
Access time: 900ns
Kind of interface: serial
Memory capacity: 2kb
Clock frequency: 400kHz
Operating voltage: 2.5...5.5V
Memory organisation: 256x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 256x8bit; 2.5÷5.5V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Interface: I2C
Case: SOIC8
Mounting: SMD
Kind of memory: EEPROM
Operating temperature: -40...125°C
Kind of package: reel; tape
Access time: 900ns
Kind of interface: serial
Memory capacity: 2kb
Clock frequency: 400kHz
Operating voltage: 2.5...5.5V
Memory organisation: 256x8bit
товар відсутній
| CAV24C32WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
товар відсутній
| FQS4901TF |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS6898A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.81 грн |
| 7+ | 55.35 грн |
| 21+ | 40.26 грн |
| 57+ | 38.1 грн |
| FDS8949 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 426 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.35 грн |
| 7+ | 56.79 грн |
| 20+ | 43.13 грн |
| 54+ | 40.98 грн |
| FDS8958B |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| fds9945 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.61 грн |
| 25+ | 28.04 грн |
| 38+ | 22.57 грн |
| 103+ | 21.35 грн |
| NDS9945 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 3.5A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 3.5A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| NDS9952A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4542DY |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6/-6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 48/51mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6/-6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±30V
On-state resistance: 48/51mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS3890 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 4.7A; Idm: 20A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 4.7A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 4.7A; Idm: 20A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 4.7A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 82mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDS9933A |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; Idm: -20A; 2W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; Idm: -20A; 2W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET x2
товар відсутній
| FDS4897C |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.2/-4.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/73mΩ
Mounting: SMD
Gate charge: 20/28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.2/-4.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/73mΩ
Mounting: SMD
Gate charge: 20/28nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 61.93 грн |
| 9+ | 43.13 грн |
| FDS9934C |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.5/-5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12/±10V
On-state resistance: 50/90mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.5/-5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12/±10V
On-state resistance: 50/90mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FODM8071 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Mounting: SMD
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Case: Mini-flat 5pin
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Mounting: SMD
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Case: Mini-flat 5pin
на замовлення 2045 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 253.16 грн |
| 5+ | 166.78 грн |
| 8+ | 120.05 грн |
| 20+ | 113.58 грн |
| 200+ | 112.87 грн |
| 500+ | 109.27 грн |
| FODM8071R2 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; 20Mbps; Mini-flat 5pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.8ns
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; 20Mbps; Mini-flat 5pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.8ns
Slew rate: 40kV/μs
на замовлення 1719 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 183.48 грн |
| 5+ | 140.9 грн |
| 7+ | 127.11 грн |
| 19+ | 120.18 грн |
| 100+ | 115.74 грн |
| BU406G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 7A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 7A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 7A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 156 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.52 грн |
| 6+ | 67.58 грн |
| 10+ | 61.11 грн |
| 16+ | 53.2 грн |
| 44+ | 50.32 грн |
| SBC817-16LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| NSVBC817-16LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товар відсутній
| HGTG11N120CND |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 298W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 22A
Power dissipation: 298W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 298W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 22A
Power dissipation: 298W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 382.45 грн |
| 3+ | 319.19 грн |
| 4+ | 237.95 грн |
| 10+ | 225.01 грн |
| TIP29AG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.03 грн |
| 10+ | 49.46 грн |
| TIP29BG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 86.71 грн |
| 11+ | 34 грн |
| 12+ | 30.27 грн |
| 33+ | 26.19 грн |
| TIP29CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.74 грн |
| 7+ | 51.76 грн |
| 10+ | 45.72 грн |
| 22+ | 39.65 грн |
| 59+ | 37.48 грн |
| TIP30CG |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.05 грн |
| MC14051BDTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Operating temperature: -55...125°C
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 600µA
Kind of output: SP8T
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Operating temperature: -55...125°C
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 600µA
Kind of output: SP8T
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
на замовлення 2337 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 48.23 грн |
| 25+ | 34.94 грн |
| 33+ | 25.74 грн |
| 91+ | 24.3 грн |
| RHRG5060 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 500A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Max. load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2.1V
Power dissipation: 125W
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 500A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Max. load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2.1V
Power dissipation: 125W
Reverse recovery time: 50ns
товар відсутній
| 2SC5566-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
на замовлення 214 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24 грн |
| 2SC5569-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
товар відсутній
| MC14051BDG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; CMOS; SMD
Operating temperature: -55...125°C
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 600µA
Kind of output: SP8T
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; CMOS; SMD
Operating temperature: -55...125°C
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 600µA
Kind of output: SP8T
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.2 грн |
| 10+ | 40.98 грн |
| 31+ | 27.68 грн |
| 84+ | 26.17 грн |
| MC14051BDR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 600µA
Kind of output: SP8T
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Operating temperature: -40...85°C
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 600µA
Kind of output: SP8T
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
товар відсутній
| FPF1039UCX |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Case: WLCSP6
Supply voltage: 1.2...5.5V DC
On-state resistance: 75mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected; output discharge
Kind of package: reel; tape
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Operating temperature: -40...85°C
Case: WLCSP6
Supply voltage: 1.2...5.5V DC
On-state resistance: 75mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected; output discharge
Kind of package: reel; tape
Mounting: SMD
товар відсутній
| FDPF390N15A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 150V
Drain current: 10A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 22W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 150V
Drain current: 10A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 22W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.89 грн |
| 10+ | 84.11 грн |
| 12+ | 76.2 грн |
| FDPF39N20 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 23.4A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 37W
Polarisation: unipolar
Gate charge: 49nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 23.4A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 37W
Polarisation: unipolar
Gate charge: 49nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| D44VH10G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.13 грн |
| 7+ | 52.48 грн |
| 10+ | 43.71 грн |
| 22+ | 39.18 грн |
| 50+ | 38.89 грн |
| 59+ | 37.09 грн |
| 250+ | 36.16 грн |
| MC78L05ACDR2G | |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78L00A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78L00A
на замовлення 830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 21.21 грн |
| 25+ | 17.97 грн |
| 100+ | 8.27 грн |
| 120+ | 7.33 грн |
| 320+ | 6.9 грн |
| 500+ | 6.61 грн |
| MC78L08ABDR2G |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.5...23V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.5...23V
Manufacturer series: MC78L00A
на замовлення 2354 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 27.87 грн |
| 19+ | 19.12 грн |
| 33+ | 11.07 грн |
| 91+ | 9.35 грн |
| 250+ | 8.84 грн |
| 500+ | 8.48 грн |
| MC78L08ABPG |
|
Виробник: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; TO92; THT; bulk; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 8V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.5...23V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; TO92; THT; bulk; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 8V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10.5...23V
Manufacturer series: MC78L00A
на замовлення 1897 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 18.04 грн |
| 26+ | 14.09 грн |
| 77+ | 11.07 грн |
| 210+ | 10.5 грн |