| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| BUK6D230-80EX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Pulsed drain current: 20.4A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D30-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12.8A Pulsed drain current: 73A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D38-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 68A Power dissipation: 19W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D385-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 1078mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D43-40PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.9A Pulsed drain current: -56A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 81mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D43-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D56-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D72-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.8A Pulsed drain current: 44A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 124mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D77-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 42A Power dissipation: 18.8W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 167mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6D81-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 6.9A Pulsed drain current: 39A Power dissipation: 18.8W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 197mΩ Mounting: SMD Gate charge: 14.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6Y10-30PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -57A Pulsed drain current: -320A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK6Y14-40PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -46A Pulsed drain current: -257A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 331 шт: термін постачання 7-14 дні (днів) |
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| BUK6Y19-30PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W Mounting: SMD Application: automotive industry Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -181A Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: -30V Drain current: -32A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 66W Polarisation: unipolar кількість в упаковці: 1 шт |
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| BUK6Y24-40PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -27A Pulsed drain current: -155A Power dissipation: 66W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6Y33-60PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -21A Pulsed drain current: -120A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK6Y61-60PX | NEXPERIA |
BUK6Y61-60PX SMD P channel transistors |
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| BUK7208-40B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 75A Pulsed drain current: 420A Power dissipation: 167W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
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| BUK7212-55B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 59A Pulsed drain current: 335A Power dissipation: 167W Case: DPAK Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
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| BUK7214-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 49A Pulsed drain current: 276A Power dissipation: 158W Case: DPAK Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
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| BUK72150-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK Polarisation: unipolar Case: DPAK Kind of package: reel; tape Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Drain-source voltage: 55V Drain current: 7A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 36W кількість в упаковці: 1 шт |
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| BUK7219-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK Case: DPAK Drain-source voltage: 55V Drain current: 39A On-state resistance: 38mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 114W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Mounting: SMD кількість в упаковці: 2500 шт |
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| BUK7227-100B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 34A Pulsed drain current: 196A Power dissipation: 167W Case: DPAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
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| BUK7230-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Pulsed drain current: 150A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
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| BUK7240-100A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 136A Power dissipation: 114W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
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| BUK7275-100A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15.4A Pulsed drain current: 87A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 187mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
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| BUK753R1-40E,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 798A Power dissipation: 234W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7606-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 638A Power dissipation: 300W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK7610-55AL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Pulsed drain current: 490A Power dissipation: 300W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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| BUK7613-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Pulsed drain current: 234A Power dissipation: 96W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 28.2mΩ Mounting: SMD Gate charge: 22.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK761R6-40E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 1355A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 145nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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BUK7628-100A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 166W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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| BUK762R4-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 1036A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 158nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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| BUK762R6-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 958A Power dissipation: 324W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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| BUK7631-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 136A Drain-source voltage: 100V Drain current: 24A On-state resistance: 84mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 96W Polarisation: unipolar Gate charge: 29.4nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 800 шт |
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| BUK763R1-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 834A Power dissipation: 293W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 114nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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BUK763R8-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 778A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 169nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK764R0-55B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 774A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Pulsed drain current: 774A Power dissipation: 300W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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| BUK764R2-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W Polarisation: unipolar Case: D2PAK; SOT404 Kind of package: reel; tape Power dissipation: 324W Mounting: SMD Gate charge: 136nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Pulsed drain current: 713A Drain current: 120A On-state resistance: 10.2mΩ Type of transistor: N-MOSFET Application: automotive industry кількість в упаковці: 800 шт |
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| BUK764R4-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 620A Power dissipation: 234W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK765R0-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404 Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 115A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 349W Polarisation: unipolar Gate charge: 180nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| BUK766R0-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W Mounting: SMD Case: D2PAK; SOT404 Application: automotive industry Kind of package: reel; tape Pulsed drain current: 473A Drain-source voltage: 60V Drain current: 75A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 182W Polarisation: unipolar Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| BUK7675-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 14.3A Pulsed drain current: 81A Power dissipation: 62W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| BUK768R1-100E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 439A Drain-source voltage: 100V Drain current: 78A On-state resistance: 21.9mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 263W Polarisation: unipolar Gate charge: 108nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| BUK768R1-40E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 59A; Idm: 335A; 96W Mounting: SMD Case: D2PAK; SOT404 Pulsed drain current: 335A Drain-source voltage: 40V Drain current: 59A On-state resistance: 13.7mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| BUK768R3-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61.5A Pulsed drain current: 349A Power dissipation: 137W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 43.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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BUK78150-55A/CUF | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223 Application: automotive industry Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 22A Case: SC73; SOT223 Drain-source voltage: 55V Drain current: 3.8A On-state resistance: 278mΩ Type of transistor: N-MOSFET Power dissipation: 8W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3700 шт: термін постачання 7-14 дні (днів) |
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BUK78150-55A/CUX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223 Application: automotive industry Mounting: SMD Kind of channel: enhanced Pulsed drain current: 22A Case: SC73; SOT223 Drain-source voltage: 55V Drain current: 3.8A On-state resistance: 278mΩ Type of transistor: N-MOSFET Power dissipation: 8W Polarisation: unipolar Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 819 шт: термін постачання 7-14 дні (днів) |
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| BUK7880-55A/CUX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 5A Pulsed drain current: 30A Power dissipation: 8W Case: SC73; SOT223 Gate-source voltage: ±20V On-state resistance: 148mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7D25-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 76A Power dissipation: 15W Case: DFN2020MD-6; SOT1220 On-state resistance: 46mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7D36-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.9A Pulsed drain current: 56A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 76mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7E3R5-60E,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 785A Power dissipation: 293W Case: I2PAK; SOT226 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7J1R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 220A; Idm: 600A; 500W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 220A Pulsed drain current: 600A Power dissipation: 500W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 2.18mΩ Mounting: SMD Gate charge: 131nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
товар відсутній |
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| BUK7J1R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7K12-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 228A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.8mΩ Mounting: SMD Gate charge: 34.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1500 шт |
товар відсутній |
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| BUK7K13-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 213A Power dissipation: 64W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7K134-100EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.9A Pulsed drain current: 39A Power dissipation: 32W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 335mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7K15-80EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W Application: automotive industry Drain current: 16A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET x2 Kind of package: reel; tape Case: LFPAK56D; SOT1205 On-state resistance: 38mΩ Mounting: SMD Pulsed drain current: 92A Power dissipation: 68W Gate charge: 35.1nC Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7K17-80EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W Application: automotive industry Polarisation: unipolar Type of transistor: N-MOSFET x2 On-state resistance: 42mΩ Drain current: 15A Drain-source voltage: 80V Kind of package: reel; tape Case: LFPAK33; SOT1210 Gate charge: 32.4nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 64W Pulsed drain current: 84A кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7K18-40EX | NEXPERIA |
BUK7K18-40EX Multi channel transistors |
товар відсутній |
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| BUK7K23-80EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 68A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 22.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
| BUK6D230-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D30-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.8A
Pulsed drain current: 73A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.8A
Pulsed drain current: 73A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D38-30EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D385-100EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 1078mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 1078mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D43-40PX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.9A
Pulsed drain current: -56A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.9A
Pulsed drain current: -56A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D43-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D56-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D72-30EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D77-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6D81-80EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6Y10-30PX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -57A
Pulsed drain current: -320A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -57A
Pulsed drain current: -320A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6Y14-40PX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 331 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 93.13 грн |
| 5+ | 78.68 грн |
| 18+ | 54.36 грн |
| 49+ | 51.88 грн |
| BUK6Y19-30PX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -181A
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: -30V
Drain current: -32A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -181A
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: -30V
Drain current: -32A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| BUK6Y24-40PX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -155A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -155A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK6Y33-60PX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21A
Pulsed drain current: -120A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21A
Pulsed drain current: -120A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7208-40B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 420A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 420A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK7212-55B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK7214-75B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 276A
Power dissipation: 158W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 276A
Power dissipation: 158W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK72150-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Drain-source voltage: 55V
Drain current: 7A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 36W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Drain-source voltage: 55V
Drain current: 7A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 36W
кількість в упаковці: 1 шт
товар відсутній
| BUK7219-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 39A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 39A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
| BUK7227-100B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 196A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 196A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK7230-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Pulsed drain current: 150A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Pulsed drain current: 150A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK7240-100A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK7275-100A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.4A
Pulsed drain current: 87A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 187mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.4A
Pulsed drain current: 87A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 187mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| BUK753R1-40E,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 798A
Power dissipation: 234W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 798A
Power dissipation: 234W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7606-75B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 638A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 638A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7610-55AL,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 490A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 490A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK7613-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 234A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28.2mΩ
Mounting: SMD
Gate charge: 22.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 234A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28.2mΩ
Mounting: SMD
Gate charge: 22.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK761R6-40E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1355A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1355A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK7628-100A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 166W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 166W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK762R4-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1036A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 158nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 1036A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1036A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 158nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK762R6-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 958A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 958A; 324W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 958A
Power dissipation: 324W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK7631-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 136A
Drain-source voltage: 100V
Drain current: 24A
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 29.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 136A
Drain-source voltage: 100V
Drain current: 24A
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 29.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 800 шт
товар відсутній
| BUK763R1-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 834A
Power dissipation: 293W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 114nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 834A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 834A
Power dissipation: 293W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 114nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK763R8-80E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 778A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 778A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK764R0-55B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 774A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 774A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 774A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 774A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK764R2-80E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Polarisation: unipolar
Case: D2PAK; SOT404
Kind of package: reel; tape
Power dissipation: 324W
Mounting: SMD
Gate charge: 136nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 713A
Drain current: 120A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Application: automotive industry
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W
Polarisation: unipolar
Case: D2PAK; SOT404
Kind of package: reel; tape
Power dissipation: 324W
Mounting: SMD
Gate charge: 136nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Pulsed drain current: 713A
Drain current: 120A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| BUK764R4-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 234W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 234W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK765R0-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 180nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Gate charge: 180nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| BUK766R0-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 473A
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 473A
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| BUK7675-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14.3A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 14.3A
Pulsed drain current: 81A
Power dissipation: 62W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK768R1-100E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 439A
Drain-source voltage: 100V
Drain current: 78A
On-state resistance: 21.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 439A
Drain-source voltage: 100V
Drain current: 78A
On-state resistance: 21.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 263W
Polarisation: unipolar
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| BUK768R1-40E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 59A; Idm: 335A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Pulsed drain current: 335A
Drain-source voltage: 40V
Drain current: 59A
On-state resistance: 13.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 59A; Idm: 335A; 96W
Mounting: SMD
Case: D2PAK; SOT404
Pulsed drain current: 335A
Drain-source voltage: 40V
Drain current: 59A
On-state resistance: 13.7mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| BUK768R3-60E,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61.5A
Pulsed drain current: 349A
Power dissipation: 137W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61.5A; Idm: 349A; 137W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61.5A
Pulsed drain current: 349A
Power dissipation: 137W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 43.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK78150-55A/CUF |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Application: automotive industry
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 3.8A
On-state resistance: 278mΩ
Type of transistor: N-MOSFET
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Application: automotive industry
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 22A
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 3.8A
On-state resistance: 278mΩ
Type of transistor: N-MOSFET
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3700 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 20.67 грн |
| 25+ | 16.34 грн |
| 76+ | 12.65 грн |
| 208+ | 11.96 грн |
| 4000+ | 11.69 грн |
| BUK78150-55A/CUX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Application: automotive industry
Mounting: SMD
Kind of channel: enhanced
Pulsed drain current: 22A
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 3.8A
On-state resistance: 278mΩ
Type of transistor: N-MOSFET
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Application: automotive industry
Mounting: SMD
Kind of channel: enhanced
Pulsed drain current: 22A
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 3.8A
On-state resistance: 278mΩ
Type of transistor: N-MOSFET
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 819 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.34 грн |
| 14+ | 18.99 грн |
| 50+ | 16.47 грн |
| 70+ | 13.7 грн |
| 192+ | 12.95 грн |
| BUK7880-55A/CUX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 8W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5A
Pulsed drain current: 30A
Power dissipation: 8W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7D25-40EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7D36-60EX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.9A
Pulsed drain current: 56A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7E3R5-60E,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 785A
Power dissipation: 293W
Case: I2PAK; SOT226
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 785A
Power dissipation: 293W
Case: I2PAK; SOT226
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7J1R0-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; Idm: 600A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Pulsed drain current: 600A
Power dissipation: 500W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 2.18mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; Idm: 600A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Pulsed drain current: 600A
Power dissipation: 500W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 2.18mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
товар відсутній
| BUK7J1R4-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7K12-60EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 228A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.8mΩ
Mounting: SMD
Gate charge: 34.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 228A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 228A
Power dissipation: 68W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.8mΩ
Mounting: SMD
Gate charge: 34.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1500 шт
товар відсутній
| BUK7K13-60EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 213A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 38A; Idm: 213A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 213A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7K134-100EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| BUK7K15-80EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
On-state resistance: 38mΩ
Mounting: SMD
Pulsed drain current: 92A
Power dissipation: 68W
Gate charge: 35.1nC
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
On-state resistance: 38mΩ
Mounting: SMD
Pulsed drain current: 92A
Power dissipation: 68W
Gate charge: 35.1nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| BUK7K17-80EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W
Application: automotive industry
Polarisation: unipolar
Type of transistor: N-MOSFET x2
On-state resistance: 42mΩ
Drain current: 15A
Drain-source voltage: 80V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Gate charge: 32.4nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 64W
Pulsed drain current: 84A
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 15A; Idm: 84A; 64W
Application: automotive industry
Polarisation: unipolar
Type of transistor: N-MOSFET x2
On-state resistance: 42mΩ
Drain current: 15A
Drain-source voltage: 80V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Gate charge: 32.4nC
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 64W
Pulsed drain current: 84A
кількість в упаковці: 1 шт
товар відсутній
| BUK7K23-80EX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 22.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 22.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній