| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMEG6030EVPX | NEXPERIA |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Max. load current: 4.2A Reverse recovery time: 20ns Semiconductor structure: single diode Capacitance: 575pF Max. forward voltage: 0.475V Case: CFP5; SOD128 Kind of package: reel; tape Leakage current: 300mA Max. forward impulse current: 70A Power dissipation: 2.5W кількість в упаковці: 1 шт |
на замовлення 723 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
| PMEG6045ETP-QX | NEXPERIA | PMEG6045ETP-QX SMD Schottky diodes |
товар відсутній |
||||||||||||||||
| PMEG6045ETPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 4.5A; CFP5,SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 4.5A Semiconductor structure: single diode Capacitance: 575pF Max. forward voltage: 0.53V Case: CFP5; SOD128 Kind of package: reel; tape Max. forward impulse current: 70A кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
| PMEG60T10ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 280pF Max. off-state voltage: 60V Max. forward voltage: 0.59V Load current: 1A кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||
| PMEG60T10ELRX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; 13ns; CFP3,SOD123W; 1.15W Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 13ns Max. forward impulse current: 30A Leakage current: 0.2mA Power dissipation: 1.15W Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP3; SOD123W Capacitance: 245pF Max. off-state voltage: 60V Max. forward voltage: 0.6V Load current: 1A кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||
| PMEG60T20ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 400pF Max. off-state voltage: 60V Max. forward voltage: 0.62V Load current: 2A кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||
 |
PMEG60T20ELRX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; 11ns; CFP3,SOD123W Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 11ns Max. forward impulse current: 50A Leakage current: 0.3mA Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP3; SOD123W Capacitance: 120pF Max. off-state voltage: 60V Max. forward voltage: 0.475V Load current: 2.8A кількість в упаковці: 1 шт |
на замовлення 2440 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
| PMEG60T30ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 560pF Max. off-state voltage: 60V Max. forward voltage: 0.62V Load current: 3A кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||
| PMEG60T50ELPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape Mounting: SMD Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Capacitance: 560pF Max. off-state voltage: 60V Max. forward voltage: 0.69V Load current: 5A кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||
 |
PMF170XP,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.7A Power dissipation: 0.36W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2289 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
|
|
PMF250XNEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain-source voltage: 30V Drain current: 0.5A On-state resistance: 416mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.65nC Kind of channel: enhanced Pulsed drain current: 4A кількість в упаковці: 1 шт |
на замовлення 405 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
| PMF63UNEX | NEXPERIA |
PMF63UNEX SMD N channel transistors |
на замовлення 2565 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
 |
PMGD175XNEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 4A Case: SC88; SOT363; TSSOP6 On-state resistance: 411mΩ Mounting: SMD Gate charge: 1.65nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||
|
|
PMGD280UN,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.55A Power dissipation: 0.4W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±8V On-state resistance: 0.66Ω Mounting: SMD Gate charge: 0.89nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2848 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
| PMGD290UCEAX | NEXPERIA |
PMGD290UCEAX Multi channel transistors |
на замовлення 1630 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
| PMGD780SN,115 | NEXPERIA |
PMGD780SN.115 Multi channel transistors |
на замовлення 1654 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
| PMH400UNEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 570mA Pulsed drain current: 3A Case: DFN0606-3; SOT8001 Gate-source voltage: ±8V On-state resistance: 825mΩ Mounting: SMD Gate charge: 930pC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 10000 шт |
товар відсутній |
||||||||||||||||
| PMH600UNEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Technology: Trench Pulsed drain current: 3.2A Gate-source voltage: ±8V Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 500mA On-state resistance: 1Ω Gate charge: 310pC Case: DFN0606-3; SOT8001 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate |
товар відсутній |
||||||||||||||||
| PMH950UPEH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A Type of transistor: P-MOSFET Mounting: SMD Case: DFN0606-3; SOT8001 On-state resistance: 2.3Ω Kind of package: reel; tape Technology: Trench Drain-source voltage: -20V Drain current: -360mA Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2A кількість в упаковці: 10000 шт |
товар відсутній |
||||||||||||||||
 |
PMLL4148L,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 5330 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
|
|
PMLL4148L,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 10000 шт |
товар відсутній |
|||||||||||||||
|
|
PMLL4153,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A Features of semiconductor devices: fast switching Mounting: SMD Case: SOD80C Capacitance: 4pF Max. off-state voltage: 75V Max. load current: 0.45A Max. forward voltage: 0.88V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching кількість в упаковці: 5 шт |
товар відсутній |
|||||||||||||||
|
|
PMLL4448,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4074 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
|
|
PMLL4448,135 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Max. load current: 0.45A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD80C Max. forward voltage: 0.72V Max. forward impulse current: 4A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 10000 шт |
товар відсутній |
|||||||||||||||
|
|
PMMT491A,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 2A Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry кількість в упаковці: 5 шт |
на замовлення 3555 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
|
|
PMMT591A,215 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB Kind of package: reel; tape Polarisation: bipolar Power dissipation: 0.25W Type of transistor: PNP Pulsed collector current: 2A Collector current: 1A Current gain: 300...800 Collector-emitter voltage: 40V Frequency: 150MHz Case: SOT23; TO236AB Mounting: SMD кількість в упаковці: 5 шт |
на замовлення 2650 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
 |
PMN100EPAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.6A Pulsed drain current: -10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN120ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Pulsed drain current: 10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
| PMN16XNEX | NEXPERIA |
PMN16XNEX SMD N channel transistors |
товар відсутній |
||||||||||||||||
|
|
PMN20ENAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A Mounting: SMD Pulsed drain current: 25A Gate charge: 17nC Polarisation: unipolar Technology: Trench Drain current: 4.4A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC74; SOT457; TSOP6 On-state resistance: 44mΩ кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN230ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A Mounting: SMD Kind of package: reel; tape Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 7.1A Gate charge: 3.8nC Case: SC74; SOT457; TSOP6 Drain-source voltage: 60V Drain current: 1.1A On-state resistance: 482mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
| PMN25ENEAX | NEXPERIA |
PMN25ENEAX SMD N channel transistors |
товар відсутній |
||||||||||||||||
| PMN25ENEH | NEXPERIA |
PMN25ENEH SMD N channel transistors |
товар відсутній |
||||||||||||||||
| PMN25ENEX | NEXPERIA |
PMN25ENEX SMD N channel transistors |
товар відсутній |
||||||||||||||||
|
|
PMN30ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.8A Pulsed drain current: 22A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 57mΩ Mounting: SMD Gate charge: 11.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN30UNX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.9A Pulsed drain current: 18A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 61mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
| PMN30XPAX | NEXPERIA |
PMN30XPAX SMD P channel transistors |
товар відсутній |
||||||||||||||||
|
|
PMN30XPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 17nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -21A Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 49mΩ Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
 |
PMN30XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.3A Pulsed drain current: -21A Power dissipation: 0.55W Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||
|
|
PMN40ENAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 93mΩ Pulsed drain current: 17A Gate charge: 15nC Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN40SNAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Technology: Trench Drain current: 3A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 76mΩ Pulsed drain current: 19A Gate charge: 14nC Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN42XPEAH | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN42XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -16A Case: SC74; SOT457; TSOP6 On-state resistance: 64mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||
| PMN48XP,115 | NEXPERIA |
PMN48XP.115 SMD P channel transistors |
товар відсутній |
||||||||||||||||
| PMN48XP,125 | NEXPERIA |
PMN48XP.125 SMD P channel transistors |
товар відсутній |
||||||||||||||||
| PMN48XPAX | NEXPERIA |
PMN48XPAX SMD P channel transistors |
товар відсутній |
||||||||||||||||
|
|
PMN50EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 20nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 67mΩ Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN52XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -15A Case: SC74; SOT457; TSOP6 On-state resistance: 91mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
товар відсутній |
|||||||||||||||
|
|
PMN55ENEAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN55ENEH | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN55ENEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.2A Pulsed drain current: 14A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
|
|
PMN70XPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -13A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
|||||||||||||||
| PMP4201V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Pulsed collector current: 0.2A Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz кількість в упаковці: 4000 шт |
товар відсутній |
||||||||||||||||
| PMP4501V,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666 Mounting: SMD Application: automotive industry Case: SOT666 Collector-emitter voltage: 45V Polarisation: bipolar Kind of package: reel; tape Pulsed collector current: 0.2A Collector current: 0.1A Frequency: 250MHz Current gain: 200...450 Type of transistor: NPN x2 Power dissipation: 0.3W кількість в упаковці: 4000 шт |
товар відсутній |
||||||||||||||||
| PMP5201V,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT666 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
|
|
PMP5201Y,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 1 шт |
на замовлення 1645 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||||
|
|
PMP5201Y,135 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 10000 шт |
товар відсутній |
|||||||||||||||
| PMP5501V,115 | NEXPERIA |
PMP5501V.115 PNP SMD transistors |
товар відсутній |
||||||||||||||||
|
|
PMP5501Y,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175Hz кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||
| PMPB100XPEAX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 5nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -13A Mounting: SMD Case: DFN2020MD-6; SOT1220 Drain-source voltage: -20V Drain current: -2A On-state resistance: 191mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
| PMEG6030EVPX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 4.2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.475V
Case: CFP5; SOD128
Kind of package: reel; tape
Leakage current: 300mA
Max. forward impulse current: 70A
Power dissipation: 2.5W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; 20ns; CFP5,SOD128; 2.5W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 4.2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.475V
Case: CFP5; SOD128
Kind of package: reel; tape
Leakage current: 300mA
Max. forward impulse current: 70A
Power dissipation: 2.5W
кількість в упаковці: 1 шт
на замовлення 723 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.21 грн |
| 25+ | 22.79 грн |
| 68+ | 14.34 грн |
| 186+ | 13.56 грн |
| PMEG6045ETPX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.5A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.5A
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4.5A; CFP5,SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.5A
Semiconductor structure: single diode
Capacitance: 575pF
Max. forward voltage: 0.53V
Case: CFP5; SOD128
Kind of package: reel; tape
Max. forward impulse current: 70A
кількість в упаковці: 1 шт
товар відсутній
| PMEG60T10ELPX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 280pF
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 1A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 280pF
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 1A
кількість в упаковці: 3000 шт
товар відсутній
| PMEG60T10ELRX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 13ns; CFP3,SOD123W; 1.15W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 13ns
Max. forward impulse current: 30A
Leakage current: 0.2mA
Power dissipation: 1.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 245pF
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 1A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 13ns; CFP3,SOD123W; 1.15W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 13ns
Max. forward impulse current: 30A
Leakage current: 0.2mA
Power dissipation: 1.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 245pF
Max. off-state voltage: 60V
Max. forward voltage: 0.6V
Load current: 1A
кількість в упаковці: 3000 шт
товар відсутній
| PMEG60T20ELPX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 400pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 400pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
кількість в упаковці: 3000 шт
товар відсутній
| PMEG60T20ELRX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; 11ns; CFP3,SOD123W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 120pF
Max. off-state voltage: 60V
Max. forward voltage: 0.475V
Load current: 2.8A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2.8A; 11ns; CFP3,SOD123W
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 11ns
Max. forward impulse current: 50A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Capacitance: 120pF
Max. off-state voltage: 60V
Max. forward voltage: 0.475V
Load current: 2.8A
кількість в упаковці: 1 шт
на замовлення 2440 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 16.54 грн |
| 25+ | 10.75 грн |
| 100+ | 9.26 грн |
| 126+ | 7.77 грн |
| 345+ | 7.35 грн |
| PMEG60T30ELPX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 3A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 3A
кількість в упаковці: 3000 шт
товар відсутній
| PMEG60T50ELPX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 5A
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; CFP5,SOD128; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Capacitance: 560pF
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 5A
кількість в упаковці: 3000 шт
товар відсутній
| PMF170XP,115 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.7A; 360mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.36W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2289 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 23.37 грн |
| 18+ | 14.82 грн |
| 25+ | 10.55 грн |
| 100+ | 6.34 грн |
| 215+ | 4.54 грн |
| 590+ | 4.29 грн |
| 3000+ | 4.12 грн |
| PMF250XNEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.65nC
Kind of channel: enhanced
Pulsed drain current: 4A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 30V
Drain current: 0.5A
On-state resistance: 416mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.65nC
Kind of channel: enhanced
Pulsed drain current: 4A
кількість в упаковці: 1 шт
на замовлення 405 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 12.94 грн |
| 35+ | 7.45 грн |
| 100+ | 6.43 грн |
| 188+ | 5.12 грн |
| 517+ | 4.84 грн |
| PMF63UNEX |
|
Виробник: NEXPERIA
PMF63UNEX SMD N channel transistors
PMF63UNEX SMD N channel transistors
на замовлення 2565 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 13.57 грн |
| 125+ | 7.81 грн |
| 343+ | 7.39 грн |
| PMGD175XNEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 4A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 4A
Case: SC88; SOT363; TSSOP6
On-state resistance: 411mΩ
Mounting: SMD
Gate charge: 1.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| PMGD280UN,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.4W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2848 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 25.34 грн |
| 25+ | 13.43 грн |
| 100+ | 11.68 грн |
| 109+ | 8.84 грн |
| 300+ | 8.35 грн |
| PMGD290UCEAX |
|
Виробник: NEXPERIA
PMGD290UCEAX Multi channel transistors
PMGD290UCEAX Multi channel transistors
на замовлення 1630 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 12.67 грн |
| 118+ | 8.3 грн |
| 323+ | 7.85 грн |
| PMGD780SN,115 |
|
Виробник: NEXPERIA
PMGD780SN.115 Multi channel transistors
PMGD780SN.115 Multi channel transistors
на замовлення 1654 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 13.12 грн |
| 127+ | 7.68 грн |
| 349+ | 7.26 грн |
| PMH400UNEH |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 570mA
Pulsed drain current: 3A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 825mΩ
Mounting: SMD
Gate charge: 930pC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 570mA; Idm: 3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 570mA
Pulsed drain current: 3A
Case: DFN0606-3; SOT8001
Gate-source voltage: ±8V
On-state resistance: 825mΩ
Mounting: SMD
Gate charge: 930pC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт
товар відсутній
| PMH600UNEH |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: 3.2A
Gate-source voltage: ±8V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 500mA
On-state resistance: 1Ω
Gate charge: 310pC
Case: DFN0606-3; SOT8001
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
товар відсутній
| PMH950UPEH |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN0606-3; SOT8001
On-state resistance: 2.3Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -360mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
кількість в упаковці: 10000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A
Type of transistor: P-MOSFET
Mounting: SMD
Case: DFN0606-3; SOT8001
On-state resistance: 2.3Ω
Kind of package: reel; tape
Technology: Trench
Drain-source voltage: -20V
Drain current: -360mA
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2A
кількість в упаковці: 10000 шт
товар відсутній
| PMLL4148L,115 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 5330 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 4.99 грн |
| 130+ | 2.03 грн |
| 500+ | 1.74 грн |
| 690+ | 1.39 грн |
| 1900+ | 1.32 грн |
| PMLL4148L,135 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
| PMLL4153,115 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 200mA; 4ns; SOD80C; Ufmax: 0.88V; Ifsm: 4A
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOD80C
Capacitance: 4pF
Max. off-state voltage: 75V
Max. load current: 0.45A
Max. forward voltage: 0.88V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
кількість в упаковці: 5 шт
товар відсутній
| PMLL4448,115 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4074 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 9.89 грн |
| 36+ | 7.37 грн |
| 46+ | 5.54 грн |
| 100+ | 3.17 грн |
| 250+ | 1.99 грн |
| 500+ | 1.8 грн |
| 673+ | 1.44 грн |
| PMLL4448,135 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 0.72V; 500mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD80C
Max. forward voltage: 0.72V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
| PMMT491A,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 2A
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 3555 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.94 грн |
| 40+ | 6.76 грн |
| 100+ | 5.84 грн |
| 210+ | 4.7 грн |
| 575+ | 4.45 грн |
| PMMT591A,215 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 250mW; SOT23,TO236AB
Kind of package: reel; tape
Polarisation: bipolar
Power dissipation: 0.25W
Type of transistor: PNP
Pulsed collector current: 2A
Collector current: 1A
Current gain: 300...800
Collector-emitter voltage: 40V
Frequency: 150MHz
Case: SOT23; TO236AB
Mounting: SMD
кількість в упаковці: 5 шт
на замовлення 2650 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.76 грн |
| 40+ | 6.62 грн |
| 100+ | 5.74 грн |
| 205+ | 4.8 грн |
| 555+ | 4.54 грн |
| PMN100EPAX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -10A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.6A
Pulsed drain current: -10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN120ENEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 10A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 246mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN20ENAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Mounting: SMD
Pulsed drain current: 25A
Gate charge: 17nC
Polarisation: unipolar
Technology: Trench
Drain current: 4.4A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 44mΩ
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A
Mounting: SMD
Pulsed drain current: 25A
Gate charge: 17nC
Polarisation: unipolar
Technology: Trench
Drain current: 4.4A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC74; SOT457; TSOP6
On-state resistance: 44mΩ
кількість в упаковці: 3000 шт
товар відсутній
| PMN230ENEAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.1A; Idm: 7.1A
Mounting: SMD
Kind of package: reel; tape
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 7.1A
Gate charge: 3.8nC
Case: SC74; SOT457; TSOP6
Drain-source voltage: 60V
Drain current: 1.1A
On-state resistance: 482mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
| PMN30ENEAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 3.8A; Idm: 22A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.8A
Pulsed drain current: 22A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 11.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN30UNX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.9A; Idm: 18A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 18A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN30XPEX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.4A; Idm: -21A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 17nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -21A
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
| PMN30XPX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.3A; Idm: -21A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.3A
Pulsed drain current: -21A
Power dissipation: 0.55W
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PMN40ENAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Pulsed drain current: 17A
Gate charge: 15nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 17A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Pulsed drain current: 17A
Gate charge: 15nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
| PMN40SNAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; Idm: 19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Technology: Trench
Drain current: 3A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 76mΩ
Pulsed drain current: 19A
Gate charge: 14nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
| PMN42XPEAH |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN42XPEAX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -16A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.9A
Pulsed drain current: -16A
Case: SC74; SOT457; TSOP6
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| PMN50EPEX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
| PMN52XPX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; Idm: -15A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Pulsed drain current: -15A
Case: SC74; SOT457; TSOP6
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| PMN55ENEAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.5A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN55ENEH |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN55ENEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 2.2A; Idm: 14A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.2A
Pulsed drain current: 14A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMN70XPX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -13A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -13A
Case: SC74; SOT457; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| PMP4201V,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 4000 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 4000 шт
товар відсутній
| PMP4501V,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Mounting: SMD
Application: automotive industry
Case: SOT666
Collector-emitter voltage: 45V
Polarisation: bipolar
Kind of package: reel; tape
Pulsed collector current: 0.2A
Collector current: 0.1A
Frequency: 250MHz
Current gain: 200...450
Type of transistor: NPN x2
Power dissipation: 0.3W
кількість в упаковці: 4000 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 300mW; SOT666
Mounting: SMD
Application: automotive industry
Case: SOT666
Collector-emitter voltage: 45V
Polarisation: bipolar
Kind of package: reel; tape
Pulsed collector current: 0.2A
Collector current: 0.1A
Frequency: 250MHz
Current gain: 200...450
Type of transistor: NPN x2
Power dissipation: 0.3W
кількість в упаковці: 4000 шт
товар відсутній
| PMP5201V,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SOT666
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT666
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
| PMP5201Y,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
на замовлення 1645 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.27 грн |
| 25+ | 17.68 грн |
| 72+ | 13.29 грн |
| 198+ | 12.57 грн |
| PMP5201Y,135 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 10000 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 10000 шт
товар відсутній
| PMP5501Y,115 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 200mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175Hz
кількість в упаковці: 1 шт
товар відсутній
| PMPB100XPEAX |
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2A; Idm: -13A
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 5nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -13A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 191mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній