| Фото | Назва | Виробник | Інформація |
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PSMN7R0-100PS,127 | NEXPERIA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 475A Power dissipation: 269W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN7R0-30MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 270A Power dissipation: 57W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN7R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 76A Pulsed drain current: 260A Power dissipation: 51W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.97mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN7R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 245A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1490 шт: термін постачання 7-14 дні (днів) |
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PSMN7R0-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 14.7mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1465 шт: термін постачання 7-14 дні (днів) |
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| PSMN7R5-30MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 230A Power dissipation: 45W Case: LFPAK33; SOT1210 On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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| PSMN7R5-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 202A Power dissipation: 34W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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PSMN7R5-60YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61A Pulsed drain current: 346A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 19.7mΩ Mounting: SMD Gate charge: 60.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 1488 шт: термін постачання 7-14 дні (днів) |
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| PSMN7R6-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 481A Power dissipation: 296W Case: D2PAK; SOT404 On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
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PSMN7R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 389A Power dissipation: 149W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 38.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R6-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 92A Pulsed drain current: 389A Power dissipation: 149W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 38.7nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN7R8-100PSEQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 473A Power dissipation: 294W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN8R0-40BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R0-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 92 шт: термін постачання 7-14 дні (днів) |
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| PSMN8R0-80YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Pulsed drain current: 423A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN8R2-80YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 82A Pulsed drain current: 326A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1490 шт: термін постачання 7-14 дні (днів) |
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| PSMN8R3-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 274A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R5-100PSQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 429A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN8R5-40MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN8R5-40MSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 76A Pulsed drain current: 303A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1490 шт: термін постачання 7-14 дні (днів) |
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| PSMN8R7-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN8R7-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 77 шт: термін постачання 7-14 дні (днів) |
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| PSMN8R9-100BSEJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 419A Power dissipation: 296W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN9R0-25MLC,115 | NEXPERIA |
PSMN9R0-25MLC.115 SMD N channel transistors |
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| PSMN9R1-30YL,115 | NEXPERIA |
PSMN9R1-30YL.115 SMD N channel transistors |
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| PSMN9R5-100BS,118 | NEXPERIA |
PSMN9R5-100BS.118 SMD N channel transistors |
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| PSMN9R5-100PS,127 | NEXPERIA |
PSMN9R5-100PS.127 THT N channel transistors |
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| PSMN9R5-30YLC,115 | NEXPERIA |
PSMN9R5-30YLC.115 SMD N channel transistors |
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| PSMN9R8-30MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W Mounting: SMD Pulsed drain current: 202A Power dissipation: 45W Gate charge: 5nC Polarisation: unipolar Drain current: 50A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK33; SOT1210 On-state resistance: 10.65mΩ Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| PSMNR51-25YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A Mounting: SMD Kind of package: reel; tape Case: LFPAK56E; PowerSO8; SOT1023 Power dissipation: 333W Technology: NextPowerS3 Drain current: 380A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 1.46mΩ Pulsed drain current: 2174A Gate charge: 186nC Polarisation: unipolar кількість в упаковці: 1 шт |
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| PSMNR55-40SSHJ | NEXPERIA |
PSMNR55-40SSHJ SMD N channel transistors |
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| PSMNR58-30YLHX | NEXPERIA |
PSMNR58-30YLHX SMD N channel transistors |
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| PSMNR60-25YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 300A Pulsed drain current: 1758A Power dissipation: 268W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.82mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMNR67-30YLEX | NEXPERIA |
PSMNR67-30YLEX SMD N channel transistors |
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| PSMNR70-30YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 281A Pulsed drain current: 1589A Power dissipation: 268W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMNR70-40SSHJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 350A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMNR90-30BL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 243nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMNR90-40YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 285A Pulsed drain current: 1613A Power dissipation: 333W Case: LFPAK56E; PowerSO8; SOT1023 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMNR90-50SLHAX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 302A; Idm: 1711A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 302A Pulsed drain current: 1711A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 2.03mΩ Mounting: SMD Gate charge: 383nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSSI2021SAY,115 | NEXPERIA |
Category: Voltage regulators - PWM circuits Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC Type of integrated circuit: driver Kind of integrated circuit: CV/CC controller Case: SOT353 Output current: 50mA Supply voltage: 5...75V DC Mounting: SMD Operating temperature: -65...150°C Application: for LED applications кількість в упаковці: 1 шт |
на замовлення 954 шт: термін постачання 7-14 дні (днів) |
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PTVS10VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 2920 шт: термін постачання 7-14 дні (днів) |
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PTVS10VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 35.3A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C кількість в упаковці: 1 шт |
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PTVS10VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
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PTVS10VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C кількість в упаковці: 1 шт |
на замовлення 152 шт: термін постачання 7-14 дні (днів) |
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PTVS10VU1UPAZ | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 148A Semiconductor structure: unidirectional Case: DFN3 Mounting: SMD Leakage current: 2µA кількість в упаковці: 1 шт |
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PTVS11VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 1202 шт: термін постачання 7-14 дні (днів) |
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PTVS11VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 564 шт: термін постачання 7-14 дні (днів) |
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PTVS11VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C кількість в упаковці: 1 шт |
товар відсутній |
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PTVS12VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 2907 шт: термін постачання 7-14 дні (днів) |
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PTVS12VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 2021 шт: термін постачання 7-14 дні (днів) |
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PTVS12VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5nA Operating temperature: max. 185°C кількість в упаковці: 1 шт |
товар відсутній |
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| PTVS12VU1UPAZ | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061 Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Semiconductor structure: unidirectional Case: SOT1061 Mounting: SMD Leakage current: 50nA кількість в упаковці: 1 шт |
товар відсутній |
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PTVS13VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 15.15V; 27.9A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.15V Max. forward impulse current: 27.9A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 2970 шт: термін постачання 7-14 дні (днів) |
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PTVS13VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 15.15V; 27.9A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.15V Max. forward impulse current: 27.9A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C кількість в упаковці: 1 шт |
товар відсутній |
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PTVS13VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 15.15V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 1680 шт: термін постачання 7-14 дні (днів) |
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PTVS14VP1UP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
товар відсутній |
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PTVS14VP1UTP,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Case: SOD128F Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C кількість в упаковці: 1 шт |
товар відсутній |
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PTVS14VS1UR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C кількість в упаковці: 1 шт |
на замовлення 405 шт: термін постачання 7-14 дні (днів) |
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PTVS14VS1UTR,115 | NEXPERIA |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 185°C кількість в упаковці: 1 шт |
товар відсутній |
| PSMN7R0-100PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN7R0-30MLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN7R0-30YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN7R0-30YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1490 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 71 грн |
| 6+ | 47.98 грн |
| 25+ | 41.62 грн |
| 31+ | 31.13 грн |
| 86+ | 29.38 грн |
| PSMN7R0-60YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1465 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.3 грн |
| 5+ | 107.19 грн |
| 14+ | 72.42 грн |
| 37+ | 68.26 грн |
| PSMN7R5-30MLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 230A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 45W
Case: LFPAK33; SOT1210
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
| PSMN7R5-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
| PSMN7R5-60YLX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1488 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.06 грн |
| 5+ | 77.8 грн |
| 19+ | 52.44 грн |
| 51+ | 49.11 грн |
| PSMN7R6-100BSEJ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 481A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 481A
Power dissipation: 296W
Case: D2PAK; SOT404
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| PSMN7R6-60BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN7R6-60PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN7R8-100PSEQ |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 473A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 473A
Power dissipation: 294W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R0-40BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R0-40PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 92 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 93.36 грн |
| 10+ | 79.91 грн |
| 15+ | 68.26 грн |
| 39+ | 64.93 грн |
| PSMN8R0-80YLX |
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R2-80YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; Idm: 326A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 82A
Pulsed drain current: 326A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1490 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.02 грн |
| 5+ | 105.46 грн |
| 13+ | 75.58 грн |
| 35+ | 71.5 грн |
| 500+ | 71.42 грн |
| PSMN8R3-40YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 274A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 274A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 274A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R5-100PSQ |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 429A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 429A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 429A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R5-40MLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R5-40MSDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 42A; Idm: 239A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R5-60YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1490 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 95.92 грн |
| 5+ | 82.99 грн |
| 16+ | 60.68 грн |
| 44+ | 57.35 грн |
| PSMN8R7-80BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN8R7-80PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 155.09 грн |
| 3+ | 134.85 грн |
| 10+ | 97.23 грн |
| 28+ | 91.98 грн |
| PSMN8R9-100BSEJ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 419A
Power dissipation: 296W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 419A; 296W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 419A
Power dissipation: 296W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN9R8-30MLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W
Mounting: SMD
Pulsed drain current: 202A
Power dissipation: 45W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
On-state resistance: 10.65mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 202A; 45W
Mounting: SMD
Pulsed drain current: 202A
Power dissipation: 45W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
On-state resistance: 10.65mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| PSMNR51-25YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Mounting: SMD
Kind of package: reel; tape
Case: LFPAK56E; PowerSO8; SOT1023
Power dissipation: 333W
Technology: NextPowerS3
Drain current: 380A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Pulsed drain current: 2174A
Gate charge: 186nC
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 380A; Idm: 2174A
Mounting: SMD
Kind of package: reel; tape
Case: LFPAK56E; PowerSO8; SOT1023
Power dissipation: 333W
Technology: NextPowerS3
Drain current: 380A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.46mΩ
Pulsed drain current: 2174A
Gate charge: 186nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| PSMNR60-25YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 300A
Pulsed drain current: 1758A
Power dissipation: 268W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.82mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 300A; Idm: 1758A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 300A
Pulsed drain current: 1758A
Power dissipation: 268W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.82mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMNR70-30YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 281A
Pulsed drain current: 1589A
Power dissipation: 268W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 281A
Pulsed drain current: 1589A
Power dissipation: 268W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMNR70-40SSHJ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 350A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 350A; Idm: 1983A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 350A
Pulsed drain current: 1983A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 1.53mΩ
Mounting: SMD
Gate charge: 202nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMNR90-30BL,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 243nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMNR90-40YLHX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 285A; Idm: 1613A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 285A
Pulsed drain current: 1613A
Power dissipation: 333W
Case: LFPAK56E; PowerSO8; SOT1023
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMNR90-50SLHAX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 302A; Idm: 1711A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 302A
Pulsed drain current: 1711A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.03mΩ
Mounting: SMD
Gate charge: 383nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 302A; Idm: 1711A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 302A
Pulsed drain current: 1711A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.03mΩ
Mounting: SMD
Gate charge: 383nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSSI2021SAY,115 |
|
Виробник: NEXPERIA
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT353
Output current: 50mA
Supply voltage: 5...75V DC
Mounting: SMD
Operating temperature: -65...150°C
Application: for LED applications
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT353
Output current: 50mA
Supply voltage: 5...75V DC
Mounting: SMD
Operating temperature: -65...150°C
Application: for LED applications
кількість в упаковці: 1 шт
на замовлення 954 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 23.58 грн |
| 25+ | 18.67 грн |
| 78+ | 12.43 грн |
| 214+ | 11.75 грн |
| PTVS10VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 2920 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.58 грн |
| 25+ | 19.02 грн |
| 74+ | 13.09 грн |
| 203+ | 12.37 грн |
| PTVS10VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11.7V; 35.3A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
товар відсутній
| PTVS10VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
товар відсутній
| PTVS10VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
на замовлення 152 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 23.04 грн |
| 25+ | 12.97 грн |
| 100+ | 11.32 грн |
| 101+ | 9.63 грн |
| 276+ | 9.1 грн |
| 3000+ | 8.91 грн |
| PTVS10VU1UPAZ |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 11.7V; 148A; unidirectional; DFN3
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 148A
Semiconductor structure: unidirectional
Case: DFN3
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
товар відсутній
| PTVS11VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12.85V; 33A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 1202 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.2 грн |
| 25+ | 16.16 грн |
| 87+ | 11.19 грн |
| 237+ | 10.58 грн |
| PTVS11VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 564 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 22.68 грн |
| 25+ | 12.1 грн |
| 100+ | 10.57 грн |
| 103+ | 9.44 грн |
| 281+ | 8.92 грн |
| 3000+ | 8.57 грн |
| PTVS11VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
товар відсутній
| PTVS12VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 2907 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 26.89 грн |
| 25+ | 18.33 грн |
| 70+ | 13.82 грн |
| 192+ | 13.07 грн |
| 3000+ | 12.57 грн |
| PTVS12VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 2021 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.2 грн |
| 25+ | 12.79 грн |
| 100+ | 11.15 грн |
| 110+ | 8.82 грн |
| 301+ | 8.34 грн |
| PTVS12VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 14V; 20.1A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
товар відсутній
| PTVS12VU1UPAZ |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 13.3÷14.7V; unidirectional; SOT1061
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Semiconductor structure: unidirectional
Case: SOT1061
Mounting: SMD
Leakage current: 50nA
кількість в упаковці: 1 шт
товар відсутній
| PTVS13VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.15V; 27.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.15V; 27.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 2970 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.27 грн |
| 25+ | 17.89 грн |
| 78+ | 12.4 грн |
| 215+ | 11.74 грн |
| PTVS13VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.15V; 27.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.15V; 27.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
товар відсутній
| PTVS13VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 1680 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 24.83 грн |
| 25+ | 13.14 грн |
| 100+ | 11.4 грн |
| 107+ | 9.04 грн |
| 294+ | 8.55 грн |
| PTVS14VP1UP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
товар відсутній
| PTVS14VP1UTP,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16.4V; 25.9A; unidirectional; SOD128F; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Case: SOD128F
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
товар відсутній
| PTVS14VS1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
кількість в упаковці: 1 шт
на замовлення 405 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 22.68 грн |
| 25+ | 12.1 грн |
| 100+ | 10.49 грн |
| 114+ | 8.46 грн |
| 314+ | 8 грн |
| PTVS14VS1UTR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; SOD123W; max.185°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 185°C
кількість в упаковці: 1 шт
товар відсутній