| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| PMZB200UNEYL | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Pulsed drain current: 5A Case: DFN1006B-3; SOT883B Gate-source voltage: ±8V On-state resistance: 410mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
товар відсутній |
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| PMZB290UNE2YL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW Technology: Trench Mounting: SMD Power dissipation: 0.35W Case: DFN1006B-3; SOT883B Kind of package: reel; tape Polarisation: unipolar Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 4A Drain-source voltage: 20V Drain current: 0.8A On-state resistance: 1.19Ω Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 7290 шт: термін постачання 7-14 дні (днів) |
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| PMZB320UPEYL | NEXPERIA |
PMZB320UPEYL SMD P channel transistors |
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| PMZB350UPE,315 | NEXPERIA |
PMZB350UPE.315 SMD P channel transistors |
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| PMZB390UNEYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Pulsed drain current: 4A Case: DFN1006B-3; SOT883B Gate-source voltage: ±8V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10000 шт |
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| PMZB550UNEYL | NEXPERIA |
PMZB550UNEYL SMD N channel transistors |
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| PMZB600UNELYL | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A Pulsed drain current: 2.5A Gate charge: 0.7nC Polarisation: unipolar Technology: Trench Drain current: 0.4A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: DFN1006B-3; SOT883B On-state resistance: 1Ω Mounting: SMD кількість в упаковці: 10000 шт |
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| PMZB670UPE,315 | NEXPERIA |
PMZB670UPE.315 SMD P channel transistors |
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| PMZB950UPEYL | NEXPERIA |
PMZB950UPEYL SMD P channel transistors |
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| PNE20010ERX | NEXPERIA |
PNE20010ERX SMD universal diodes |
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PNS40010ER,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V Max. off-state voltage: 0.4kV Load current: 1.4A Max. forward impulse current: 32A Case: SOD123W Kind of package: reel; tape Max. forward voltage: 0.93V Features of semiconductor devices: ultrafast switching Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 1.8µs Leakage current: 0.5mA Power dissipation: 2.3W Type of diode: rectifying кількість в упаковці: 5 шт |
на замовлення 3830 шт: термін постачання 7-14 дні (днів) |
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| PQMD16Z | NEXPERIA |
PQMD16Z Complementary transistors |
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PRTR5V0U2AX,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA кількість в упаковці: 1 шт |
на замовлення 4142 шт: термін постачання 7-14 дні (днів) |
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| PRTR5V0U2F,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6÷9V; unidirectional; SOT886 Type of diode: TVS array Breakdown voltage: 6...9V Semiconductor structure: unidirectional Mounting: SMD Case: SOT886 Max. off-state voltage: 5.5V Leakage current: 0.1µA кількість в упаковці: 1 шт |
на замовлення 4581 шт: термін постачання 7-14 дні (днів) |
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PRTR5V0U2X,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.5V; unidirectional; SOT143B Type of diode: TVS array Breakdown voltage: 7.5V Semiconductor structure: unidirectional Mounting: SMD Case: SOT143B Max. off-state voltage: 5.5V Leakage current: 0.1µA кількість в упаковці: 1 шт |
на замовлення 2526 шт: термін постачання 7-14 дні (днів) |
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PRTR5V0U4D,125 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.5V; unidirectional; SC74,SOT457,TSOP6 Type of diode: TVS array Breakdown voltage: 7.5V Semiconductor structure: unidirectional Mounting: SMD Case: SC74; SOT457; TSOP6 Max. off-state voltage: 5V Leakage current: 0.1µA кількість в упаковці: 1 шт |
на замовлення 685 шт: термін постачання 7-14 дні (днів) |
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| PSC1065KQ | NEXPERIA |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Kind of package: tube Max. forward voltage: 2.6V Technology: SiC Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Leakage current: 120µA Case: TO220-2 Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 42A кількість в упаковці: 1 шт |
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PSMN004-60B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Power dissipation: 230W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 774 шт: термін постачання 7-14 дні (днів) |
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| PSMN005-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 400A; 230W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 400A Power dissipation: 230W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 10.75mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN008-75B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 240A Power dissipation: 230W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 122.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN009-100B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 400A; 230W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Pulsed drain current: 400A Power dissipation: 230W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN009-100P,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 400A Power dissipation: 230W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 23.8mΩ Mounting: THT Gate charge: 156nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 797 шт: термін постачання 7-14 дні (днів) |
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| PSMN010-80YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 336A; 194W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 84A Pulsed drain current: 336A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 84.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN011-100YSFX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26.2A; Idm: 318A; 152W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 26.2A Pulsed drain current: 318A Power dissipation: 152W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 34.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN011-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 150A; 29W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 37A Pulsed drain current: 150A Power dissipation: 29W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Gate charge: 4.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN011-60MLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 242A; 91W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61A Pulsed drain current: 242A Power dissipation: 91W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 9.35mΩ Mounting: SMD Gate charge: 37.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN011-60MSX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61A Pulsed drain current: 244A Power dissipation: 91W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1336 шт: термін постачання 7-14 дні (днів) |
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| PSMN011-80YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Pulsed drain current: 266A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN012-100YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 339A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 33.1mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN012-100YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 35.8mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN012-60MSX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 37A Pulsed drain current: 211A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 24.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN012-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 89W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN012-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 295A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Pulsed drain current: 295A Power dissipation: 148W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN012-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 295A Power dissipation: 148W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4561 шт: термін постачання 7-14 дні (днів) |
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PSMN013-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 38.9mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN013-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Pulsed drain current: 272A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN013-100YSEX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Pulsed drain current: 330A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 36mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN013-30MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 157A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN013-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 26W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN013-40VLDX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A Type of transistor: N-MOSFET x2 Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 169A Power dissipation: 46W Case: LFPAK56D; SOT1205 Gate-source voltage: ±20V On-state resistance: 32.8mΩ Mounting: SMD Gate charge: 19.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN013-60YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 53A Pulsed drain current: 212A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 12.1mΩ Mounting: SMD Gate charge: 33.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN013-80YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 233A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 60A Pulsed drain current: 233A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN014-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 56W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 46A Power dissipation: 56W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| PSMN014-80YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 44A; Idm: 250A; 147W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 80V Drain current: 44A Pulsed drain current: 250A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 56.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN015-100B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 300W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 40.5mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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PSMN015-100P,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 300W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 40.5mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 7-14 дні (днів) |
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PSMN015-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 201A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 20.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 782 шт: термін постачання 7-14 дні (днів) |
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PSMN015-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 201A Power dissipation: 86W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: THT Gate charge: 20.9nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 7-14 дні (днів) |
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| PSMN016-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 230A Power dissipation: 148W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 44.8mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN016-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 230A Power dissipation: 148W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 36.4mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 68 шт: термін постачання 7-14 дні (днів) |
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| PSMN016-100YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 204A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Pulsed drain current: 204A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 12.7mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| PSMN017-30BL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 154A; 47W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 154A Power dissipation: 47W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN017-30PL,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 152A Power dissipation: 45W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 5.1nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 37 шт: термін постачання 7-14 дні (днів) |
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PSMN017-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 44A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 36.1mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1328 шт: термін постачання 7-14 дні (днів) |
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| PSMN017-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Pulsed drain current: 200A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 15.2mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PSMN017-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Pulsed drain current: 200A Power dissipation: 103W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 15.2mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 44 шт: термін постачання 7-14 дні (днів) |
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PSMN018-80YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 45A Power dissipation: 89W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| PSMN019-100YLX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 40A; Idm: 226A; 167W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Kind of package: reel; tape Power dissipation: 167W Drain-source voltage: 100V Drain current: 40A On-state resistance: 52.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 724nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 226A кількість в упаковці: 1 шт |
товар відсутній |
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| PSMN020-30MLCX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31.8A Pulsed drain current: 127A Power dissipation: 33W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| PSMN021-100YLX | NEXPERIA |
PSMN021-100YLX SMD N channel transistors |
товар відсутній |
| PMZB200UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| PMZB290UNE2YL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Technology: Trench
Mounting: SMD
Power dissipation: 0.35W
Case: DFN1006B-3; SOT883B
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Technology: Trench
Mounting: SMD
Power dissipation: 0.35W
Case: DFN1006B-3; SOT883B
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 7290 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.67 грн |
| 55+ | 5.07 грн |
| 250+ | 3.87 грн |
| 690+ | 3.66 грн |
| 5000+ | 3.61 грн |
| PMZB390UNEYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
| PMZB600UNELYL |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
кількість в упаковці: 10000 шт
товар відсутній
| PNS40010ER,115 |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.4A; 1.8us; SOD123W; Ufmax: 0.93V
Max. off-state voltage: 0.4kV
Load current: 1.4A
Max. forward impulse current: 32A
Case: SOD123W
Kind of package: reel; tape
Max. forward voltage: 0.93V
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 1.8µs
Leakage current: 0.5mA
Power dissipation: 2.3W
Type of diode: rectifying
кількість в упаковці: 5 шт
на замовлення 3830 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.34 грн |
| 35+ | 7.43 грн |
| 100+ | 6.41 грн |
| 200+ | 4.93 грн |
| 545+ | 4.66 грн |
| PRTR5V0U2AX,215 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
на замовлення 4142 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 26.89 грн |
| 25+ | 21.44 грн |
| 62+ | 15.79 грн |
| 168+ | 14.93 грн |
| PRTR5V0U2F,115 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; unidirectional; SOT886
Type of diode: TVS array
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT886
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
на замовлення 4581 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 22.68 грн |
| 25+ | 19.02 грн |
| 64+ | 15.18 грн |
| 175+ | 14.36 грн |
| 5000+ | 13.82 грн |
| PRTR5V0U2X,215 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SOT143B
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT143B
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
на замовлення 2526 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 23.58 грн |
| 25+ | 19.88 грн |
| 71+ | 13.69 грн |
| 194+ | 12.95 грн |
| 500+ | 12.94 грн |
| PRTR5V0U4D,125 |
|
Виробник: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5V; unidirectional; SC74,SOT457,TSOP6
Type of diode: TVS array
Breakdown voltage: 7.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5V
Leakage current: 0.1µA
кількість в упаковці: 1 шт
на замовлення 685 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 25.1 грн |
| 25+ | 19.02 грн |
| 74+ | 13.09 грн |
| 203+ | 12.38 грн |
| PSC1065KQ |
|
Виробник: NEXPERIA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Kind of package: tube
Max. forward voltage: 2.6V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Leakage current: 120µA
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 42A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Kind of package: tube
Max. forward voltage: 2.6V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Leakage current: 120µA
Case: TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 42A
кількість в упаковці: 1 шт
товар відсутній
| PSMN004-60B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 774 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.91 грн |
| 5+ | 191.9 грн |
| 7+ | 159.82 грн |
| 17+ | 151.5 грн |
| 800+ | 145.67 грн |
| PSMN005-75B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.75mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 10.75mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN008-75B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 240A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 240A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 240A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN009-100B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 400A
Power dissipation: 230W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN009-100P,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 797 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.52 грн |
| 3+ | 214.38 грн |
| 7+ | 159.82 грн |
| 17+ | 151.5 грн |
| PSMN010-80YLX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 84.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 84.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN011-100YSFX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26.2A; Idm: 318A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26.2A
Pulsed drain current: 318A
Power dissipation: 152W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26.2A; Idm: 318A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26.2A
Pulsed drain current: 318A
Power dissipation: 152W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 34.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN011-30YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 150A; 29W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 150A
Power dissipation: 29W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 37A; Idm: 150A; 29W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 37A
Pulsed drain current: 150A
Power dissipation: 29W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN011-60MLX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 242A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 242A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.35mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 242A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 242A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.35mΩ
Mounting: SMD
Gate charge: 37.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN011-60MSX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1336 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.54 грн |
| 6+ | 47.89 грн |
| 25+ | 41.62 грн |
| 27+ | 36.88 грн |
| 72+ | 34.88 грн |
| 500+ | 33.55 грн |
| PSMN011-80YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 266A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 266A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 266A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN012-100YLX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 339A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 33.1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; Idm: 339A; 238W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 339A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 33.1mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN012-100YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN012-60MSX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 24.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN012-60YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN012-80BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 295A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 295A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN012-80PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4561 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.24 грн |
| 10+ | 96.56 грн |
| 12+ | 83.24 грн |
| 32+ | 79.08 грн |
| 1000+ | 75.75 грн |
| PSMN013-100BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN013-100PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Pulsed drain current: 272A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: THT
Gate charge: 59nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN013-100YSEX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Pulsed drain current: 330A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 330A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Pulsed drain current: 330A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN013-30MLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN013-30YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN013-40VLDX |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN013-60YLX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN013-80YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 233A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 233A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 233A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Pulsed drain current: 233A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN014-40YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 46A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 46A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN014-80YLX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 44A; Idm: 250A; 147W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 56.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 80V; 44A; Idm: 250A; 147W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 56.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN015-100B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN015-100P,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 300W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 300W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 40.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.6 грн |
| 3+ | 152.14 грн |
| 9+ | 112.38 грн |
| 24+ | 106.55 грн |
| PSMN015-60BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 782 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.37 грн |
| 5+ | 72.61 грн |
| 18+ | 55.77 грн |
| 48+ | 53.27 грн |
| 800+ | 52.44 грн |
| PSMN015-60PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 89.04 грн |
| 10+ | 74.92 грн |
| 15+ | 66.34 грн |
| 40+ | 62.68 грн |
| PSMN016-100BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 44.8mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 148W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 44.8mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN016-100PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 68 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 135.36 грн |
| 3+ | 117.56 грн |
| 10+ | 96.14 грн |
| 28+ | 90.9 грн |
| 50+ | 89.9 грн |
| 250+ | 87.4 грн |
| PSMN016-100YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 204A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.7mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 204A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.7mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN017-30BL,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 154A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 154A
Power dissipation: 47W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 154A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 154A
Power dissipation: 47W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN017-30PL,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 75.21 грн |
| 10+ | 65.76 грн |
| 16+ | 64.1 грн |
| 42+ | 60.77 грн |
| PSMN017-60YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1328 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.23 грн |
| 24+ | 42.36 грн |
| 25+ | 39.96 грн |
| 66+ | 38.29 грн |
| 1500+ | 38.21 грн |
| PSMN017-80BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN017-80PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 95.09 грн |
| 10+ | 80.74 грн |
| 14+ | 73.17 грн |
| 37+ | 69.17 грн |
| 250+ | 68.26 грн |
| PSMN018-80YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PSMN019-100YLX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 40A; Idm: 226A; 167W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 724nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 226A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 40A; Idm: 226A; 167W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 167W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 52.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 724nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 226A
кількість в упаковці: 1 шт
товар відсутній
| PSMN020-30MLCX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній